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A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness. Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed. 相似文献
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利用螺旋波等离子体增强化学气相沉积(HWP-CVD)技术,以SiH4和N2为反应气体进行了氮化硅(SiN)薄膜沉积,并研究了实验参量对薄膜特性的影响.利用傅里叶变换红外光谱、紫外—可见光谱和椭偏光检测等技术对薄膜的结构、厚度和折射率等参量进行了测量.结果表明,采用HWP-CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜,所沉积的薄膜主要表现为Si—N键合结构.采用较低的反应气体压强将提高薄膜沉积速率,并使薄膜的致密性增加.适当提高N2/SiH4比例有利于薄膜中H含量的降低.
关键词:
螺旋波等离子体
化学气相沉积
氮化硅薄膜 相似文献
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The excimer laser-induced crystallization technique has been
used to investigate the preparation of nanocrystalline silicon (nc-Si)
from amorphous silicon ($\al$-Si) thin films on silicon or glass
substrates. The $\al$-Si films without hydrogen grown by pulsed-laser
deposition are chosen as precursor to avoid the
problem of hydrogen effluence during annealing. Analyses
have been performed by scanning electron microscopy, atomic
force microscopy, Raman scattering spectroscopy and high-resolution
transmission--electron microscopy. Experimental results show
that silicon nanocrystals can be formed through laser annealing.
The growth characters of nc-Si are strongly dependent on the laser
energy density. It is shown that the volume of the molten silicon
predominates essentially the grain size of nc-Si, and the surface
tension of the crystallized silicon is responsible for the mechanism of nc-Si growth. 相似文献
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利用电子束蒸发工艺,以Ag层为衬底,沉积了中心波长为632.8nm的氧化锆(ZrO2)薄膜,膜层厚度在80—480nm范围内变化.研究了不同厚度样品的粗糙度变化规律和表面散射特性.结果发现,随着膜层厚度的逐渐增加,其表面均方根(RMS)粗糙度和总积分散射(TIS)均呈现出先减小后增大的趋势.利用非相关表面粗糙度的散射模型对样品的TIS特性进行了理论计算,所得结果与测量结果相一致.
关键词:
氧化锆
表面粗糙度
标量散射
电子束蒸发 相似文献
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提出了一种利用总积分散射(TIS)测量K9玻璃基片表面散射和体散射的实验方法。首先采用磁控溅射技术在基片表面沉积厚度为几十nm的金属Ag薄膜,然后将基片的表面和体区分开考虑,通过TIS测得了基片上下表面的均方根粗糙度, 进而求得基片的总散射和表面散射,最后计算得到了体散射。分别利用TIS和原子力显微镜(AFM)测量了3个样品上表面所镀Ag膜的均方根粗糙度,两种方法所得的均方根粗糙度的数值相差不明显,差值分别为0.08,0.11和0.09 nm, 表明TIS和AFM的测量结果相一致。利用该方法测得3块K9玻璃基片的总散射分别为6.06×10-4,5.84×10-4和6.48×10-4,表面散射介于1.25×10-4~1.56×10-4之间,由此计算得到的体散射分别为3.10×10-4,3.30×10-4和3.61×10-4。 相似文献
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光学薄膜的分层界面散射模型 总被引:4,自引:0,他引:4
提出了一种计算光学介质膜系表面总积分散射(TIS)的理论模型。该模型认为,介质膜系粗糙的膜层界面和表面为微观结构不均匀的微薄过渡区;过渡区可用折射率为不同常量的层数足够多的均匀子层来代替,同时这些均匀子层的折射率变化满足指数函数的分布规律。利用矩阵法对积分散射的表达式进行了推导。对于电子束蒸发方法在K9玻璃上沉积的ZrO2单层膜,分层界面散射模型对积分散射的理论计算值要比非相关表面散射模型的计算值更加符合总积分散射仪的实验测量结果。 相似文献
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