具有高散射能力的聚碳酸酯复合材料的制备与性能研究

以双酚A型聚碳酸酯(PC)为基体、苯乙烯-丙烯腈共聚物(SAN)为散射体,通过熔融共混方法制备了同时具备高透光率和高雾度的高散射聚碳酸酯光散射片,研究了SAN含量对光散射片微观结构和光散射性能的影响,发现透光率和雾度同时随着散射体含量增加而提高的现象.研究结果表明,当SAN含量低于30%时,分散相为球形颗粒,颗粒的平均粒径随着SAN含量的增加而增加,而颗粒的数量浓度则随之减小,这使得其透光率和雾度均随着SAN含量的增加而增加,当SAN含量为30%时,透光率和雾度达到最大值,分别为89.1%和91.7%.并结合Mie散射理论解释说明了透光率和雾度同时随着散射体含量的增加而提高的现象.但当SAN含量的进一步增加,分散相颗粒尺寸已远大于光波的波长,不再适用于Mie散射理论,且部分不再呈球形颗粒,使得PC片的透光率和雾度略有降低.     

薄膜层状外延生长的光学原位实时监测方法

综述了几种用于监控薄膜外延生长的光学原位实时监测方法的进展。其中光反射差法／光反射各向异性谱（ＲＤＳ／ＲＡＳ）和ｐ偏振反射谱（ＰＲＳ），表面光吸收（ＳＰＡ），椭偏仪（ＳＥ）等。在外延过程中已观测到了薄膜层状外延周期振荡。     

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

As an industry accepted storage scheme, hafnium oxide(HfO_x) based resistive random access memory(RRAM)should further improve its thermal stability and data retention for practical applications. We therefore fabricated RRAMs with HfO_x/ZnO double-layer as the storage medium to study their thermal stability as well as data retention. The HfO_x/ZnO double-layer is capable of reversible bipolar switching under ultralow switching current( 3 μA) with a Schottky emission dominant conduction for the high resistance state and a Poole–Frenkel emission governed conduction for the low resistance state. Compared with a drastically increased switching current at 120℃ for the single HfO_x layer RRAM, the HfO_x/ZnO double-layer exhibits excellent thermal stability and maintains neglectful fluctuations in switching current at high temperatures(up to 180℃), which might be attributed to the increased Schottky barrier height to suppress current at high temperatures. Additionally, the HfO_x/ZnO double-layer exhibits 10-year data retention @85℃ that is helpful for the practical applications in RRAMs.     

基于超声的纳米复相陶瓷弯曲断裂特性研究

为了研究超声磨削纳米复相陶瓷材料的精密高效加工本质,根据超声磨削纳米复相陶瓷断裂的实际情况以及相似原理,设计了能够实现超声下三点弯曲断裂在线观测的试验装置.通过试验,发现超声下的疲劳寿命、抗弯强度明显低于无超声下的,且随频率的增加而降低;裂纹扩展速度随着频率的增加而增加,断裂过程快而稳定;裂纹在扩展方向上发生偏转,且随频率的增加偏转角减小;超声下的断裂模式在一定程度上更倾向于沿晶-穿晶混合模式,且随频率的增加断口存在解理面更复杂、表面更平整等现象.     

Optical Properties of Co-BaTiO3/Mg（100） Nano-Composite Films Grown by Pulsed Laser Deposition Method

Co nanoparticles embedded in a BaTiO3 matrix, namely Co-BaTiO3 nano-composite films are grown on Mg（100） single crystal substrates by the pulsed laser deposition （PLD） method at 650℃. Optical properties of the CoBaTiO3 nano-composite films are examined by absorption spectra （AS） and photoluminescence （PL） spectra. The results indicate that the concentration of Co nano-particles strongly influences the electron transition of the Co BaTiO3 nano-composite films. The PL emission band ranging from 1.9 to 2.2eV is reported. The AS and PL spectra suggest that the band gap is in the range of 3.28-3.7eV.     

在GaAs-Al矩形光栅界面上表面增强二次谐波产生

我们以GaAs-Al矩形光栅界面为例具体推导了二次谐波产生的公式.依据Bloembergen和Pershan关于非线性介质的理论,用微扰论方法求解了麦克斯韦方程.理论公式和数值计算均表明,表面增强二次谐波起源于共振激励表面电磁波.     

Co:BaTiO3纳米复合薄膜的制备及其结构

用脉冲激光沉积技术(PLD)在MgO(100)基底上生长了嵌埋Co纳米晶的BaTiO3复合薄膜. 分别利用x射线衍射(XRD)、原子力显微镜(AFM)以及拉曼光谱(Raman)对薄膜的微观结构、表面 形貌进行了表征. 结果表明该薄膜为c轴取向的四方晶体结构，薄膜表面均匀、致密、 具有原子尺度的光滑性，其均方根表面粗糙度(RMS)达到015nmCo以纳米晶形式嵌埋BaTi O3基体中，呈单分散性均匀分布，其粒径随激光脉冲数的增加而增大. Co：BaTiO3纳米 复合薄膜拉曼峰的强度随钴纳米晶粒径的增加明显减弱，但是峰的宽度逐渐增加. 关键词： Co：BaTiO3 纳米复合薄膜 脉冲激光沉积     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.