A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions.Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er3+ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er3+ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200° C is needed to optically activate Er3+,which may be the main obstacle to impede the application of Er-doped silicon nitride.     

Application of LC/MS and ICP/MS for establishing the fingerprint spectrum of the traditional Chinese medicinal preparation Gan-Lu-Yin

We developed a method to analyze the fingerprint spectrum qualitatively and quantitatively for the traditional Chinese herbal medicinal preparation Gan-Lu-Yin with HPLC combined with photodiode array detection, and MS, and to identify the preparation's 14 main components including baicalin, baicalein, oroxylin A-7-O-glucuronide, wogonin-7-O-glucuronide, wogonin, and oroxylin A in Radix Scutellariae; naringin and neohesperidin in Aurantii fructus; liquiritigenin, liquiritin, and glycyrrhizic acid in Radix Glycyrrhizae. In LC/UV assay, a Cosmosil 5C18-MS-II column was used as the stationary phase, and a gradient of potassium dihydrogen phosphate, ACN, and water as the elute solution. The UV detection wavelengths were 250 and 280 nm. In LC/MS assay, a gradient of phosphoric acid, ACN, and water was used as the elute solution, and electrospray positive ion mode ((+)-ESI) as the analytic mode. In order to explore the distribution of trace metal elements effectively in Gan-Lu-Yin, a microwave digestion method was used for sample treatment, and an inductively coupled plasma MS assay was used to analyze fingerprint spectra of the inorganic metals in Gan-Lu-Yin. Combined with fingerprint spectra of organic compounds by LC/UV and LC/MS, it was expected to provide effective quality control in the production of Gan-Lu-Yin.     

电化学不对称合成进展

综述了电化学不对称合成的研究概况，按照诱导手性方式的不同分六类加以介绍，参考文献５８篇。     

苯胺电化学聚合机理的研究

主要应用电化学方法研究了苯胺及其电化学聚合产物─—聚苯胺的循环伏安曲线，同时讨论了苯胺的存在对４－氨基二苯胺循环伏安曲线的影响。结果表明：随着苯胺聚合的进行，聚苯胺同时发生降解；苯胺电化学聚合按“白催化机理”进行。     

羰基化合物电化学烯丙基化电极过程的研究

在甲醇中,通过电还原循环二烯丙基锡试剂,使2-降冰片烷基甲醛和癸醛电化学烯丙基化,得到相应醇的产率分别为81％和86％。用电化学测试技术,确定了二溴烯丙基甲氧基锡的还原电势、还原过程的不可逆性以及扩散系数、阴极传递系数和交换电流密度等电化学参数。根据实验事实,提出了可能的反应机理。     

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_0.7Ga_0.3As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.     

Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55μm： physics,design and simulation

We have studied the optical matching layers (OMLs) and external quantum efficiency in the evanescent coupling photodiodes (ECPDs) integrating a diluted waveguide as a fibre-to-waveguide coupler, by using the semi-vectorial beam propagation method (BPM). The physical basis of OML has been identified, thereby a general designing rule of OML is developed in such a kind of photodiode. In addition, the external quantum efficiency and the polarization sensitivity versus the absorption and coupling length are analysed. With an optical matching layer, the absorption medium with a length of 30μm could absorb 90% of the incident light at 1.55μm wavelength, thus the total absorption increases more than 7 times over that of the photodiode without any optical matching layer.     

用PAA模板法实现硅基纳米孔阵列结构

用二次阳极氧化方法制备出分立、双向贯通并且超薄（500—1000 nm）的多孔阳极氧化铝膜,贴合到硅片上进行干法刻蚀,实现图形转移,得到了硅基纳米孔阵列结构,并对工艺中影响图形转移质量的因素进行了探索.扫描电镜（SEM）测试结果表明该途径得到的纳米结构孔形态均匀且大面积有序,孔深度可达到125 nm.对该样品进行热氧化处理后进行光致发光（PL）测试,结果表明其光致发光机理是基于通常较微弱的TO声子辅助的硅带边发光,并实现了显著发光增强,对这种增强效果的物理机理进行了理论分析.该结构具有的独特光学特性为利用 关键词： 多孔阳极氧化铝模板 硅基纳米孔阵列结构 图形转移     

Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RC_d response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10~nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.