激光等离子体无源电探针探测及光谱诊断的比较分析

提出一种利用无源电探针探测激光焊接光致等离子体的方法。采用光电同步采集系统对激光焊接光致等离子体进行研究,利用无源电探针和光纤式光谱仪探测光致等离子体,利用等离子鞘层理论分析电信号,并运用相对光强法计算出光致等离子体的电子温度,比较同步光电信号分析结果。将不涂覆表面物质以及表面分别涂覆KF和TiO₂三种情况下的计算结果进行对比,对影响结果准确性的因素进行分析。研究结果表明通过无源探针法计算等离子体温度与光谱信号计算结果基本吻合,准确度受等离子体离子质量的影响。无源电探针法能够反映激光焊接光致等离子体内温度变化,具有较好的实时性,可以作为激光等离子体监测手段。     

药芯焊丝TIG焊电弧特性的光谱分析

利用光谱诊断方法结合高速摄像研究所提出的药芯焊丝的填丝TIG焊接新工艺的电弧特性,借助高速摄像研究药芯焊丝TIG焊的熔滴过渡方式;通过对焊接电弧进行光谱采集点扫描,对采集的谱线进行元素标定,以药粉中活性元素K和Na作为追踪目标,统计得到电弧中药粉成分的分布范围;并利用Boltzmann图法计算TIG焊电弧的温度场分布,分析了熔滴过渡方式对电弧温度场分布的影响。研究结果表明,通过调整丝极间距,得到药芯焊丝TIG焊的三种典型的熔滴过渡方式：滴状过渡(2 mm)、渣柱过渡(5 mm)和搭桥过渡(7 mm)。药粉中的活性元素K和Na等集中分布在熔池上方的电弧空间,且其分布受丝极间距的影响,丝极间距越小其分布越靠近钨极,容易造成对钨极的污染。不填丝TIG焊的电弧温度分布呈钟罩形,等温线关于钨极轴线近似对称分布;与不填丝TIG焊相比,药芯焊丝TIG焊的电弧温度场受熔滴过渡的影响发生了不同程度的扭曲,滴状过渡的电弧温度场扭曲严重,焊接过程中飞溅较大;相比于滴状过渡,渣柱过渡和搭桥过渡的电弧温度场扭曲程度较小且焊接过程稳定,适合该TIG焊方法的使用。     

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_0.7Ga_0.3As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.     

Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs

We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_SD)unchanged,and obtained a group of devices with gate-recess length(L_recess)from 0.4μm to 0.8μm through process improvement.In order to suppress the influence of the kink effect,we have done SiN_X passivation treatment.The maximum saturation current density(ID_max)and maximum transconductance(g_m,max)increase as L_recess decreases to 0.4μm.At this time,the device shows ID_max=749.6 mA/mm at V_GS=0.2 V,V_DS=1.5 V,and g_m,max=1111 mS/mm at V_GS=?0.35 V,V_DS=1.5 V.Meanwhile,as L_recess increases,it causes parasitic capacitance C_gd and g_d to decrease,making f_max drastically increases.When L_recess=0.8μm,the device shows f_T=188 GHz and f_max=1112 GHz.     

Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process

A double-recessed offset gate process technology for InP-based high electron mobility transistors (HEMTs) has been developed in this paper. Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized. Compared with single-recessed devices, the maximum drain-source current (I_D,max) and maximum extrinsic transconductance (g_m,max) of double-recessed devices decreased due to the increase in series resistances. However, in terms of RF performance, double-recessed HEMTs achieved higher maximum oscillation frequency (f_MAX) by reducing drain output conductance (g_ds) and drain to gate capacitance (C_gd). In addition, further improvement of f_MAX was observed by adjusting the gate offset of double-recessed devices. This can be explained by suppressing the ratio of C_gd to source to gate capacitance (C_gs) by extending drain-side recess length (L_rd). Compared with the single-recessed HEMTs, the f_MAX of double-recessed offset gate HEMTs was increased by about 20%.     

保护条件变化的激光焊接等离子体光谱分析

保护气体在激光焊接过程中起重要的作用,保护条件的改变对焊接质量会有显著地影响。研究Nd∶YAG激光焊过程中保护条件的变化对激光等离子体的电子温度和电子密度等特征参数的影响,通过设计分步减小保护气流量的激光焊试验进行规律性研究,通过模拟实际可能发生的保护不良的激光焊试验进行验证性研究。在试验研究过程中,利用光谱仪采集激光焊接过程中产生的光致等离子体的光谱信息,通过相对光强法计算不同保护条件下等离子体的电子温度,通过斯塔克展宽机制计算不同保护条件下等离子体的电子密度。研究结果表明,保护条件的改变对Nd∶YAG激光焊接过程中产生的光致等离子体的电子温度和电子密度有重要影响,随着保护条件的变化,光致等离子体的电子温度和电子密度的平均值会发生变化,其波动幅度也会发生变化。在保护良好的条件下,等离子体的电子温度和电子密度均较小,且波动幅度也较小;在保护不良的条件下,等离子体的电子温度和电子密度都比较大,且波动幅度也比较大,这种变化的特征有助于对激光焊接过程进行质量监控。     

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs

A set of 100-nm gate-length InP-based high electron mobility transistors (HEMTs) were designed and fabricated with different gate offsets in gate recess. A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography. DC and RF measurement was conducted. With the gate offset varying from drain side to source side, the maximum drain current (I_ds,max) and transconductance (g_m,max) increased. In the meantime, f_T decreased while f_max increased, and the highest f_max of 1096 GHz was obtained. It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance. Output conductance was also suppressed by gate offset toward source side. This provides simple and flexible device parameter selection for HEMTs of different usages.