Effect of lithium-potassium mixed alkali on spectroscopic properties of Er^3＋-doped aluminophosphate glasses

Er^3＋-doped lithium-potassium mixed alkali aluminophosphate glasses belonging to the oxide system xK2O-（15-x）Li2O-4B2O3-11Al2O3-5BaO-65P2O5 are obtained in a semi-continuous melting quenching process. Spectroscopic properties of Er^3＋-doped glass matrix have been analysed by fitting the experimental data with the standard Judd-Ofelt theory. It is observed that Judd-Ofelt intensity parameters Ωt（t = 2, 4 and 6） of Er^3＋ change when the second alkali is introduced into glass matrix. The variation of line strength Sed[^4I13/2,^4I15/2] follows the same trend as that of the/26 parameter. The effect of mixed alkali on the spectroscopic properties of the aluminophosphate glasses, such as absorption cross-section, stimulated emission cross-section, spontaneous emission probability, branching ratio and the radiative lifetime, has also been investigated in this paper.     

Role of amorphous silicon domains of Er^3＋ emission in the Er—doped hydrogenated amorphous silicon suboxide film

An investigation on the correlation between amorphous Si (a-Si) domains and Er^{3+} emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er^{3+} carrier-mediated excitation which has been proved to be the highest excitation path for Er^{3+} ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiO_x) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er^{3+} ions. This study provides a better understanding of the role of a-Si domains on Er^{3+} emission in a-Si:O:H films.     

室温下掺Er富硅氧化硅和掺Er富硅氮化硅的光致发光及其退火

用磁控溅射淀积掺Er氧化硅、掺Er富硅氧化硅、掺Er氮化硅和掺Er富硅氮化硅薄膜,室温下测量这四种薄膜的光致发光（PL）谱,观察到这四种薄膜都具有1.54μm的峰位,其强度与薄膜的退火温度有关。为了确定1.54μmPL的最佳退火温度,这些薄膜都分别在600,700,800,900,1000,1100℃的温度下同时退火,发现两种富硅薄膜的最佳退火温度是800℃,不富硅的两种薄膜的最佳退火温度是900℃。样品的1.54μmPL最强,且800℃退火的掺Er富硅氧化硅薄膜的1.54μm峰强度是最强的,比不富硅的强了约20倍,还观察到这四种薄膜都具有1.38μm的PL带,且掺Er富硅氧化硅和掺Er富硅氮化硅这两种薄膜的PL在强度上1.38μm峰与1.54μm峰有一定的关系。     

Ultraviolet and visible upconversion dynamics in Er^3＋：YAlO3 under ^2H11/2 excitation

The luminescence of Er^3＋：YAlO3 in ultraviolet visible and infrared ranges under the 518 nm excitation of the multiples ^2H11/2 have been investigated. Ultraviolet （275 nm and 318 nm）, violet （405 nm and 413 nm） and blue （474 nm） upconversion and infrared downconversion luminescence has been observed. By means of measuring the fluorescence decay curves and using the theory of rate equations, the luminescence kinetics was studied in detail and the processes of energy transfer upconversion （ETU） and excitation state absorption （ESA） were proposed to explain the upconversion phenomena.     

Green and red up-conversion emissions and thermometric application of Er3+-doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663\,nm of wavelength, corresponding respectively to the ${^{2}}H_{11 / 2} \to {^{4}}I_{15 / 2}$, ${^{4}}S_{3 / 2} \to {^{4}}I_{15 / 2}$ and ${^{4}}F_{9 / 2} \to {^{4}}I_{15 / 2}$ transitions of Er$^{3 + }$ ions, have been observed for the Er$^{3 + }$-doped silicate glass excited by a 978\,nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296--673\,K, which shows that Er$^{3 + }$-doped silicate glass can be used as a sensor in high-temperature measurement.     

Green and red up-conversion emissions and thermometric application of Er^3＋-doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663 nm of wavelength, corresponding respectively to the ^2H11/2 → ^4I15/2, ^4S3/2 → ^4I15/2 and ^4F9/2 → ^4I15/2 transitions of Er^3＋ ions, have been observed for the Er^3＋-doped silicate glass excited by a 978 nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296-673 K, which shows that Er^3＋-doped silicate glass can be used as a sensor in high-temperature measurement.     

Spectroscopic investigation of a new crystal： Nd^3＋,Yb^3＋：YVO4

The absorption and emission spectra of the YVO4 single crystal co-doped with 1 at.% Nd^3＋ and 1 at.% Yb^3＋ are investigated. The efficient Nd^3＋ → Yb^3＋ energy transfer and the back transfer （Yb^3＋ → Nd^3＋） are observed at room temperature. The fluorescence lifetime of the 4F3/2 level of Nd^3＋ in Nd,Yb：YVO4 is measured under 808 nm laser light excitation. The efficiency of Nd^3＋ → Yb^3＋ energy transfer in YVO4 is determined to be about 34%.     

Configurational entropy-induced phase transition in spinel LiMn2O4

The spinel-type LiMn$_{2}$O$_{4}$ is a promising candidate as cathode material for rechargeable Li-ion batteries due to its good thermal stability and safety. Experimentally, it is observed that in this compound there occur the structural phase transitions from cubic ($Fd\bar{3}m)$ to tetragonal ($I4_{1}/{amd}$) phase at slightly below room temperature. To understand the phase transition mechanism, we compare the Gibbs free energy between cubic phase and tetragonal phase by including the configurational entropy. Our results show that the configurational entropy contributes substantially to the stability of the cubic phase at room temperature due to the disordered Mn$^{3+}$/Mn$^{4+}$ distribution as well as the orientation of the Jahn-Teller elongation of the Mn$^{3+}$O$_{6}$ octahedron in the the spinel phase. Meanwhile, the phase transition temperature is predicted to be 267.8 K, which is comparable to the experimentally observed temperature. These results serve as a good complement to the experimental study, and are beneficial to the improving of the electrochemical performance of LiMn$_{2}$O$_{4}$ cathode.     

Luminescent characteristics of Tm3+/Tb3+/Eu3+ tri-doped Na5Y9F32 single crystals for white emission with high thermal stability

By using an improved Bridgman method, 0.3 mol% Tm$^{3+}/0.6$ mol% Tb$^{3+}/y$ mol% Eu$^{3+}$ ($y = 0$, 0.4, 0.6, 0.8) doped Na$_{5}$Y$_{9}$F$_{32}$ single crystals were prepared. The x-ray diffraction, excitation spectra, emission spectra and fluorescence decay curves were used to explore the crystal structure and optical performance of the obtained samples. When excited by 362 nm light, the cool white emission was realized by Na$_{5}$Y$_{9}$F$_{32}$ single crystal triply-doped with 0.3 mol% Tm$^{3+}/0.6$ mol% Tb$^{3+}/0.8$ mol% Eu$^{3+}$, in which the Commission Internationale de l'Eclairage (CIE) chromaticity coordinate was (0.2995, 0.3298) and the correlated color temperature (CCT) was 6586 K. The integrated normalized emission intensity of the tri-doped single crystal at 448 K could keep 62% of that at 298 K. The internal quantum yield (QY) was calculated to be $\sim 15.16$% by integrating spheres. These results suggested that the single crystals tri-doped with Tm$^{3+}$, Tb$^{3+}$ and Eu$^{3+}$ ions have a promising potential application for white light-emitting diodes (w-LEDs).     

Plasma treatment studies of MIS devices

Silicon nitride films have emerged as the possible future dielectrics for ultra large scale integration (ULSI). Because the interface state density of silicon nitride/silicon interface in metal insulator semiconductor (MIS) configuration is more than an order of magnitude larger than that of silicon dioxide/silicon interface, plasma treatment studies on silicon nitride films have been undertaken for the possible improvement. Accordingly, silicon nitride films of various composition have been prepared by plasma enhanced chemical vapor deposition (PECVD) system using silane(SiH₄) and ammonia(NH₃) with nitrogen(N₂) as the diluent and MIS devices have been fabricated with as well as without plasma treated silicon nitride as the insulator. A considerable improvement in the silicon nitride/silicon interface is observed on ammonia plasma treatment while nitrous oxide(N₂O) plasma treatment studies have resulted in the establishment of a novel plasma oxidation process.     

Infrared-to-visible and infrared-to-violet upconversion fluorescence of rare earth doped LaF3 nanocrystals

This paper reports that hexagonal-phase LaF3：Yb0.20^3＋,Er0.02^3＋ and LaF3：Yb0.20^3＋, Tm0.02^3＋ nanocrystals （NCs） were synthesized via a hydrothermal method. The transmission electron microscopy, selected area electron diffraction, powder x-ray diffraction, and thermogravimetric analysis are used to characterize the NCs. Under 980 nm excitation, the Yb^3＋/Er^3＋ and Yb^3＋/Tm^3＋ codoped NCs colloidal solutions present bright green and blue upconversion fluorescence, respectively. These NCs show efficient infrared-to-violet and infrared-to-visible upconversion. The upconversion fluo- rescence mechanisms of LaF2：Yb0.20^3＋, Er0.02^3＋ and LaF3：Yb0.20^3＋,Tm0.02^3＋ NCs are investigated with a 980-nm diode laser as excitation source.     

Optical and physicochemical properties of hydrogenated silicon nitride thin films: Effect of the thermal annealing

The effect of thermal annealing on the optical and physicochemical properties of hydrogenated silicon nitride films was studied. These films were deposited by plasma-enhanced chemical vapor deposition from a mixture of silane, ammonia, and nitrogen. Subsequently, the films were annealed at various temperatures ranging from 400°C to 1000°C. The properties of the films were studied using ellipsometry and Fourier transform infrared spectroscopy. The Maxwell Garnet model considers the silicon nitride material as heterogeneous with three distinct phases: silicon, stoichiometric silicon nitride, and hydrogen. Based on the ellipsometric analysis, the annealing treatment leads to reduce the volume fraction of both hydrogen and silicon. As a result, the stoichiometry parameter significantly increases from 1.24 to 1.32 making it closer to the stoichiometric silicon nitride one. According to the infrared data, a noticeable decrease in the total hydrogen concentration in the films was obtained with respect to the annealing temperature.     

Micro thermal shear stress sensor based on vacuum anodic bonding and bulk-micromachining

This paper describes a micro thermal shear stress sensor with a cavity underneath, based on vacuum anodic bonding and bulk micromachined technology. A Ti/Pt alloy strip, 2μm×100μm, is deposited on the top of a thin silicon nitride diaphragm and functioned as the thermal sensor element. By using vacuum anodic bonding and bulk-si anisotropic wet etching process instead of the sacrificial-layer technique, a cavity, functioned as the adiabatic vacuum chamber, 200μm×200μm×400μm, is placed between the silicon nitride diaphragm and glass （Corning 7740）. This method totally avoid adhesion problem which is a major issue of the sacrificial-layer technique.     

Microstructural,magnetic and dielectric performance of rare earth ion (Sm3+)-doped MgCd ferrites

The combined effects of Sm$^{3+}$ substitution together with the addition of 3 wt% Bi$_{2}$O$_{3}$ endow MgCd ferrites with excellent magnetic permeability and dielectric permittivity. Various concentrations of Sm$^{3+}$ ($x = 0$, 0.03, 0.06, 0.09, 0.12 and 0.15) were employed to modify the permeability ($\mu'$) and permittivity ($\varepsilon'$) of the MgCd ferrites. X-ray diffraction, scanning electron microscopy (SEM), vibrating sample magnetometry and vector network analysis techniques were used to characterize the samples. The measurement results reveal that the ferrites processed a saturation magnetization of up to 36.8 emu/g and coercivity of up to 29.2 Oe via the conventional solid-state reaction method. The surface morphology SEM confirms that with increasing Sm$^{3+}$ concentration, the grain shape changes from a polygon to a circle. Moreover, the dielectric permittivity can reach a value of 23. The excellent properties obtained in Sm$^{3+}$-substituted Mg ferrites suggest that they could be promising candidates for modern high-frequency antenna substrates or multilayer devices.     

Local structure of Fe-doped In 2 O 3 films investigated by X-ray absorption fine structure spectroscopy

$(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ $(x=0.07, 0.09, 0.16, 0.22, 0.31)$ films were deposited on Si (100) substrates by RF-magnetron sputtering technique. The influence of Fe doping on the local structure of films was investigated by X-ray absorption spectroscopy (XAS) at Fe K-edge and L-edge. For the $(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ films with $x=0.07, 0.09 \mbox{ and } 0.16$ , Fe ions dissolve into $\mathrm{In}_{2}\mathrm{O}_{3}$ and substitute for $\mathrm{In}^{3+}$ sites with a mixed-valence state ( $\mathrm{Fe}^{2+}/\mathrm{Fe}^{3+}$ ) of Fe ions. However, a secondary phase of Fe metal clusters is formed in the $(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ films with $x=0.22 \mbox{ and } 0.31$ . The qualitative analyses of Fe-K edge extended X-ray absorption fine structure (EXAFS) reveal that the Fe–O bond length shortens and the corresponding Debye–Waller factor ( $\sigma^{2}$ ) increases with the increase of Fe concentration, indicating the relaxation of oxygen environment of Fe ions upon substitution. The anomalously large structural disorder and very short Fe–O distance are also observed in the films with high Fe concentration. Linear combination fittings at Fe L-edge further confirm the coexistence of $\mathrm{Fe}^{2+}$ and $\mathrm{Fe}^{3+}$ with a ratio of ${\sim}3:2$ ( $\mathrm{Fe}^{2+}: \mathrm{Fe}^{3+}$ ) for the $(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ film with $x=0.16$ . However, a significant fraction ( ${\sim}40~\mbox{at\%}$ ) of the Fe metal clusters is found in the $(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ film with $x=0.31$ .     

The mechanism research of the Cr^4＋Nd^3＋：YAG laser

The 946nm diode-pump microchip self-Q-switched laser of a chromium and neodymium codoped yttrium aluminum garnet crystal material (Cr^{4+}Nd^{3+}:YAG) is studied, especially about its physical mechanism of operation. The {}^4F_{3/2}→{}^4I_{9/2} transition of Nd^{3+} ion is beneficial to achieving laser oscillation in a quasi-three-level system based on coating the cavity mirrors of the microchip with films that suppress the 1064nm operation and enhance the 946nm laser. The Cr^{4+} ion is a saturable absorber. The initial loss N_{t1} is high, which acts as the threshold for laser oscillation. The stable loss N_{t2} is low because the Cr^{4+} ion is acceleratively bleached by the fast enhancement of the oscillating laser. The high N_{t1}, small N_{t2} and fast progresses permit the oscillating laser of the Cr^{4+}Nd^{3+}:YAG to have a good self-Q-switched property whose full width at half maximum is about 4.2ns. Its highest laser power is about 5.7mW. Its peak power is about 150W. Its good fundamental transverse TEM_{00} mode results from the absorption bleaching established by both the pump and oscillating lasers, which suppress other transverse mode and allow the oscillation only in the fundamental transverse TEM_{00} mode.     

立方氮化硼薄膜生长过程中的界面控制

在立方氮化硼薄膜气相生长过程中生成的无定形初期层和乱层结构氮化硼中间层，一直是阻碍立方氮化硼薄膜外延生长的主要原因.系统地分析了硅衬底预处理对立方氮化硼薄膜中无定形初期层成分的影响，发现在等离子体化学气相生长法制备薄膜时，硅衬底上形成无定形初期层的可能原因有氧的存在、离子轰击以及高温下硅的氮化物的形成.在H₂气氛中1200K热处理硅衬底可以有效地减少真空室中残留氧浓度，除去硅表面的自然氧化层，保持硅衬底表面晶体结构.控制衬底温度不超过900 K，就能防止硅的氮化物的形成，成功地除去无 关键词： 立方氮化硼薄膜 等离子体化学气相生长 界面 电子显微镜     

The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique

The role of hydrogen in hydrogenated microcrystalline silicon ($\mu $c-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been investigated in this paper. With \textit{in situ} optical emission spectroscopy (OES) diagnosis during the fabrication of $\mu $c-Si:H thin films under different plasma excitation frequency $\nu _{\rm e }$ (60MHz--90MHz), the characteristic peak intensities ($I_{{\rm SiH}^*}$, $I_{{\rm H}\alpha^*}$ and $I_{{\rm H}\beta ^*}$) in SiHVHF-PECVD技术 氢化微晶硅 光发射光谱 薄膜学VHF-PECVD technique, hydrogenated microcrystalline silicon, role of hydrogen, optical emission spectroscopyProject supported by the Natural Science Foundation of Guangdong Province, China (Grant No 05300378), the State Key Development Program for Basic Research of China (Grant Nos G2000028202 and G2000028203) and the Program on Natural Science of Jinan University, Guangzhou, China (Grant No 51204056).2005-11-252005-11-252006-01-05The role of hydrogen in hydrogenated microcrystalline silicon （μc-Si：H） thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition （VHF-PECVD） technique have been investigated in this paper. With in situ optical emission spectroscopy （OES） diagnosis during the fabrication of μc-Si：H thin films under different plasma excitation frequency Ve （60MHz-90MHz）, the characteristic peak intensities （IsiH＊, IHα＊ and IHβ＊ ） in SiH4＋H2 plasma and the ratio of （IHα＊ ＋ IHβ＊ ） to IsiH＊ were measured; all the characteristic peak intensities and the ratio （IHα＊ ＋ IHβ＊ ）/IsiH＊ are increased with plasma excitation frequency. It is identified that high plasma excitation frequency is favourable to promote the decomposition of SiH4＋H2 to produce atomic hydrogen and SiHx radicals. The influences of atomic hydrogen on structural properties and that of SiHx radicals on deposition rate of μc-Si：H thin films have been studied through Raman spectra and thickness measurements, respectively. It can be concluded that both the crystalline volume fraction and deposition rate are enhanced with the increase of plasma excitation frequency, which is in good accord with the OES results. By means of FTIR measurements, hydrogen contents of μc-Si：H thin films deposited at different plasma excitation frequency have been evaluated from the integrated intensity of wagging mode near 640 cm^-1. The hydrogen contents vary from 4% to 5%, which are much lower than those of μc-Si：H films deposited with RF-PECVD technique. This implies that μc-Si：H thin films deposited with VHF-PECVD technique usually have good stability under light-soaking.     

Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al$_{2}$O$_{3}$/GaN MOSFETs (metal-oxide-semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility ($\mu_{\rm FEmax}$) of sapphire substrate device (176 cm$^{2}$/V$\cdot$s) is 1.83 times that of silicon substrate device (96 cm$^{2}$/V$\cdot$s). The conductive resistance of silicon substrate device is 21.2 $\Omega {\cdot }$mm, while that of sapphire substrate device is only 15.2 $\Omega {\cdot }$mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al$_{2}$O$_{3}$/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al$_{2}$O$_{3}$ dielectric near Al$_{2}$O$_{3}$/GaN and the interface traps in Al$_{2}$O$_{3}$/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.     

Theoretical analysis of the anisotropy of the magnetization of the Ho^3＋ ion in holmium iron garnet single crystals

The spontaneous magnetization of the Ho^3＋ ion in holmium iron garnet （HoIG） single crystals in the temperature range of 4.2-294K along the directions [111], [110], and [100] are calculated, taking into account the effects of six magnetically inequivalent sites occupied by the Ho^3＋ ions based on the quantum theory. The calculated results show that the magnetization of the Ho^3＋ ion in HoIG is obviously anisotropic. The theoretical results ave in agreement with those of experiments. A primary interpretation of the anisotropy of magnetization of the Ho^3＋ ion in HoIG is put forward.