Characterization of ZnO:AI films deposited by r.f.magnetron-sputtering at low temperature

Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.     

退火温度对低温生长MgxZn1－xO薄膜光学性质的影响

用射频磁控溅射法在80℃衬底温度下制备出Mg_xZn_1-xO(x=0.16)薄膜，用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对Mg_xZn_1-xO薄膜结构和光学性质的影响.测量结果显示，Mg_xZn_1-xO薄膜为单相六角纤锌矿结构，并且具有沿c轴的择优取向；随着退火温度的升高，(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大，(002)XRD峰半高宽(F 关键词： xZn_1-xO薄膜')" href="#">Mg_xZn_1-xO薄膜 射频磁控溅射 退火     

三倍频激光等离子体X射线转换研究

利用“星光Ⅱ”高功率激光装置三倍频激光（波长０.３５μｍ,能量５—９０Ｊ,焦斑直径约２００μｍ,脉冲宽度４００—８００ｐｓ）辐照多种材料（Ｃ,Ａｌ,Ｃｕ,Ａｕ）靶,对于不同激光功率密度,研究软Ｘ射线转换和发射能谱．结合０.３５μｍ激光辐照Ａｌ靶的质量烧蚀率和等离子体喷射速度与激光功率密度的定标关系进行数值模拟,对于激光功率在１０^１３—１０^１５Ｗ／ｃｍ²理论模拟结果与实验结果符合得很好 关键词：     

Size-dependent optical properties and carriers dynamics in CdSe/ZnS quantum dots

Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots （QDs） were investigated by two-colour femtosecond （fs） pump-probe （400/800 nm） and picosecond time-resolved photoluminescence （ps TRPL） experiments. Pump-probe measurement results show that there are two components for the excited carriers relaxation, the fast one with a time constant of several ps arises from the Auger-type recombination, which shows almost particle sizeindependence. The slow relaxation component with a time constant of several decades of ns can be clearly determined with ps TRPL spectroscopy in which the slow relaxation process shows strong particle size-dependence. The decay time constants increase from 21 to 34 ns with the decrease of particle size from 3.2 to 2.1 nm. The room-temperature decay lifetime is due to the thermal mixing of bright and dark excitons, and the size-dependence of slow relaxation process can be explained very well in terms of simple three-level model.     

基于多元局部多项式方法的混沌时间序列预测

根据Takens定理，把混沌时间序列构造为一组序列对，然后用多元局部多项式方法来预测其序列.这种核估计方法可以结合局域法与全局法的优点，使得预测的精度更高.仿真结果表明，该方法非常有效.     

High power all-solid-state quasi-continuous-wave tunable Ti:sapphire laser system

This paper reports a high power, all-solid-state, quasi-continuous-wave tunable Ti:sapphire laser system pumped by laser diode (LD) pumped frequency-doubled Nd:YAG laser. The maximum tuned output power of 4.2 W (797 nm) and tuned average power of 3.7 W were achieved when fixing the Ti:sapphire broadband output power at 5.0 W and applying 750-850 nm broadband coated mirror.     

Wide-Angle Ultra-Broadband Metamaterial Absorber with Polarization-Insensitive Characteristics

An ultra-wideband metamaterial absorber is developed,which is polarized-insensitive and angular-stable.Three layers of square resistive films comprise the proposed metamaterial.The optimal values of geometric parameters are obtained,such that the designed absorber can achieve an ultra-broadband absorption response from 4.73 to 39.04 GHz(relative bandwidth of 156.7%)for both transverse electricity and transverse magnetic waves.Moreover,impedance matching theory and an equivalent circuit model are utilized for the absorption mechanism analysis.The compatibility of equivalent circuit calculation results,together with both full-wave simulation and experimental results,demonstrates the excellent performance and applicability of the proposed metamaterial absorber.     

高重复频率激光在非掺杂氧化铋玻璃中诱导TiO2晶体析出

使用聚焦后的800nm,150 fs,250 kHz的高重复频率飞秒脉冲激光研究它在非掺杂氧化铋玻璃内部三维选择性的诱导析晶.通过拉曼光谱测定发现析出的晶体是TiO2且为金红石相.研究表明,经过250 kHz的飞秒激光辐照一段时间后,玻璃内部由于脉冲能量的连续累积会使得激光辐照区域出现热累积效应,达到玻璃的析晶温度后诱导晶体析出.通过连续移动激光束,可以实现连续刻写TiO2晶线,通过EDX测试显示聚焦区域出现了由于热累积效应而形成热驱动使得离子发生迁徙.实验结果表明这种方法适用于在透明介质材料中三维选择性刻写晶体以制备集成光学器件.     

Si(111)衬底GaN薄膜的制备与特性

用溅射后退火反应法在Si(111)衬底上制备的高质量GaN薄膜. XRD, XPS, SEM和PL测量结果表明该方法制备的GaN是六角纤锌矿结构的多晶. GaN的最大晶粒尺寸约为100 nm. 在354 nm处发现强室温光致发光峰, 带隙相对于体GaN发生了轻微蓝移.     

腔靶转换区辐射温度测量及定标关系

对近年来的激光腔靶实验的辐射温度作了综合分析和研究。对多种不同类型的柱型腔靶,在波长1.06μm的各种激光条件(不同的能量和脉宽)下,测量了腔靶转换区的辐射温度,并研究了辐射温度作为入腔激光能量、脉宽及腔靶转换区内表面积函数的定标关系。