Si(111)衬底GaN薄膜的制备与特性

用溅射后退火反应法在Si(111)衬底上制备的高质量GaN薄膜. XRD, XPS, SEM和PL测量结果表明该方法制备的GaN是六角纤锌矿结构的多晶. GaN的最大晶粒尺寸约为100 nm. 在354 nm处发现强室温光致发光峰, 带隙相对于体GaN发生了轻微蓝移.     

Characterization of ZnO:AI films deposited by r.f.magnetron-sputtering at low temperature

Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.     

有机衬底SnO2:Sb透明导电膜的制备与特性研究

常温下,采用射频磁控溅射法在有机的柔性衬底上制备出了SnO2:Sb透明导电膜,并对薄膜的结构和光电性质进行了研究.制备的样品为多晶薄膜,并且保持了二氧化锡的金红石结构.性能良好的薄膜电阻率为6.5×10-3Ω·cm,载流子浓度为1.2×1020cm-3,霍耳迁移率是9.7cm2·V-1·s-1.薄膜在可见光区的平均透过率达到了85%. 关键词： 柔性衬底 SnO2:Sb透明导电膜 射频磁控溅射法     

Preparation and properties of GaN films on Si(111) substrates

High-quality gallium nitride (GaN) films were prepared on Si(111) substrates by sputtering post-annealing-reaction technique. XRD, XPS, and SEM measurement results indicate that polycrystalline GaN with hexagonal structure was successfully prepared. Intense room- temperature photoluminescence that peaked at 354 nm of the films is observed. The bandgap of these films has a blueshift with respect to bulk GaN.     

低温磁控溅射有机衬底和玻璃衬底ZnO:Al透明导电膜的结构及特性

利用射频磁控溅射法在有机薄膜衬底和7059玻璃衬底上制备出了具有良好附着性的低电阻率的ZnO:Al透明导电膜,对在低温（25～210℃）下制备薄膜的结构和光电特性进行了比较研究. 铝掺杂的氧化锌薄膜是多晶膜,具有六角纤锌矿结构,最佳取向为（002）方向.薄膜的最低电阻率分别为1.0×10^-3和8.4×10^-4Ω·cm,在可见光区的平均透过率分别达到了72%和85%.