Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the `hard gap' energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.     

Structural and physical properties of BiFeO3 thin films epitaxially grown on SrTiO3（001） and polar（111） surfaces

The influence of surface polarity on the structural properties of BiFeO3 （BFO） thin films is investigated. BFO thin films are epitaxially grown on SrTiO3 （STO） （100） and polar （111） surfaces by oxygen plasma-assisted molecular beam epitaxy. It is shown that the crystal structure, surface morphology, and defect states of BFO films grown on STO substrates with nonpolar （001） or polar （111） surfaces perform very differently. BFO/STO （001）is a fully strained tetragonal phase with orientation relationship （001）[100]BFOII（001）[100]STO, while BFO/STO （111） is a rhombohedral phase. BFO/STO （111） has rougher surface morphology and less defect states, which results in reduced leakage current and lower dielectric loss. Moreover, BFO films on both STO （001） and STO （111） are direct band oxides with similar band gaps of 2.65 eV and 2.67 eV, respectively.     

Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films

Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.     

LaFe1-xNixO3-δ系陶瓷导电性研究

采用标准的固相反应法制得ＬａＦｅ１－ｘＮｉｘＯ３－δ系陶瓷,用双臂电桥原理、四探针法对材料的电阻率进行测试。结果表明,ＬａＦｅ１－ｘＮｉｘＯ３－δ系陶瓷在０．６〈ｘ〈０．８范围具有金属态导电性,在该系材料中,存在着氧缺位和导电电子,因此具有较高的电子和氧离子混合导电性。制造工艺与氧缺位密切相关,适当提高烧结温度可使室温电阻率降低。温温实验证明,在１２０Ｋ附近材料存在一相变过程。     

Room-Temperature Anisotropic Ferromagnetism in Fe-Doped In2O3 Heteroepitaxial Films

Fe-doped In2O3 films are grown epitaxially on YSZ （100） substrates by pulsed laser deposition. The in-situ reflection high-energy electron diffraction, the atomic force microscopy, and the x-ray diffraction patterns show that the films have a well defined cubic structure epitaxially oriented in the （100） direction. Room temperature ferromagnetism is observed by an alternating gradient magnetometer. Strong perpendicular magnetic anisotropy with a remnant magnetization ratio of 0.83 and a coercivity of 2,5 kOe is revealed. Both the structural and the magnetic measurements suggest that this ferromagnetism is an intrinsic property deriving from the spin-orbit coupling between the diluted Fe atoms.     

Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance

We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.     

Ti1－xCoxO2铁磁性半导体薄膜研究

利用射频磁控反应溅射制备了Ti1-xCoxO2薄膜样品.超导量子干涉仪(SQUID)测量了样品在常温，低温下的磁特性.结果显示样品在常温下已经具有明显的铁磁性.常温时其矫顽力32×103A/m,饱和磁化强度55emu／cm3磁性元素的磁矩达0679μB／Co.饱和场12×104A/m.x射线衍射(XRD)和x射线光电子能谱(XPS)实验分析初步表明样品中没有钴颗粒. 关键词： 铁磁半导体 TiO2 薄膜     

Magnetic and Transport Properties of ZnO／Co Nanomultilayers

[ZnO(0.5 nm)/Co(0.6 nm)]60 multilayers were fabricated by magnetron sputtering. The magnetic, transport and optical properties were studied. The ferromagnetic state at low temperature was demonstrated. Most of the grains in the samples will be unblocked when temperature is below 50K. The measured magneto-resistance at 4.8K is higher than 30%. This value is larger than any other reported data. The transport mechanism may come down to a combination of tunnelling conduction with the second-order hopping. Some small peaks on transmittance curves were found, the matter is still open.     

Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO_3（110） substrates

ZnO thin film growth prefers different orientations on the etched and unetched SrTiO 3（STO）（110） substrates.Inclined ZnO and cobalt-doped ZnO（ZnCoO） thin films are grown on unetched STO（110） substrates using oxygen plasma assisted molecular beam epitaxy,with the c-axis 42 inclined from the normal STO（110） surface.The growth geometries are ZnCoO[100]//STO[110] and ZnCoO[111]//STO[001].The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D 0 X emissions associated with A 0 X emissions,and the characteristic emissions for the 2 E（2G）→ 4A2（4F） transition of Co 2＋ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film,indicating the incorporation of Co 2＋ ions at the lattice positions of the Zn 2＋ ions.The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature.     

Application of longitudinal generalized magneto-optical ellipsometry in magnetic ultrathin films

The longitudinal generalized magneto-optical ellipsometry(GME) method is extended to the measurement of threelayer ultrathin magnetic films. In this work, the theory of the reflection matrix is introduced into the GME measurement to obtain the reflective matrix parameters of ultrathin multilayer magnetic films with different thicknesses. After that, a spectroscopic ellipsometry is used to determine the optical parameter and the thickness of every layer of these samples, then the magneto-optical coupling constant of the multilayer magnetic ultrathin film can be obtained. After measurements of a series of ultrathin Fe films, the results show that the magneto-optical coupling constant Q is independent of the thickness of the magnetic film. The magneto-optical Kerr rotations and ellipticity are measured to confirm the validity of this experiment. Combined with the optical constants and the Q constant, the Kerr rotations and ellipticity are calculated in theory. The results show that the theoretical curve fits very well with the experimental data.