Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles

According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires(N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of NSiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature,for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity–temperature characteristics,that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing.These results contribute to the electronic application of nanodevices.     

The effect of dislocations on the thermodynamic properties of Ta single crystal under high pressure by molecular dynamics simulation

The thermodynamic properties of Ta metal under high pressure are studied by molecular dynamics simulation. For dislocation-free Ta crystal, all the thermodynamic properties considered are in good agreement with the results from experiments or higher level calculations. If dislocations are included in the Ta crystal, it is found that as the dislocation density increases, the hydrostatic pressure at the phase transition point of bcc→hcp and hcp→fcc decreases, while the Hugoniot temperature increases. Meanwhile, the impact pressure at the elastic–plastic transition point is found to depend on the crystallographic orientation of the pressure. As the dislocation density increases, the pressure of the elastic–plastic transition point decreases rapidly at the initial stage, then gradually decreases with the increase of the dislocation density.     

Structural,electronic,and optical properties of hexagonal and triangular SiC NWs with different diameters

Silicon carbide(SiC) is a wideband gap semiconductor with great application prospects,and the SiC nanomaterials have attracted more and more attention because of their unique photoelectric properties.According to the first-principles calculations,we investigate the effects of diameter on the electronic and optical properties of triangular SiC NWs(T-NWs)and hexagonal SiC NWs(H-NWs).The results show that the structure of H-NWs is more stable than T-NWs,and the conduction band bottom of H-NWs is more and more deviated from the valence band top,while the conduction band bottom of T-NWs is closer to the valence band top.What is more,H-NWs and T-NWs have anisotropic optical properties.The result may be helpful in developing the photoelectric materials.     

攀枝花机场北东角滑坡整治措施研究

攀枝花机场地形及地质条件复杂,在修建过程中实施了大量的挖填方工程,填方边坡形成的沉降变形和滑坡成为机场主要的工程病害。本文阐述了机场北东角滑坡的基本特征及成因,综合反分析演算和试验结果确定了滑动面的抗剪强度参数,并对滑坡稳定性进行了参数敏感性分析。在滑坡推力计算的基础上,对滑坡整治方案进行对比论证,从而确立了以抗滑桩、预应力锚索框架、削坡减载和地表防排水为主的综合整治措施。     

浅谈全息照相实验教学

为了提高全息照相实验的成功率和学生学习的积极性,本文从实验原理入手,分析了影响实验的诸因素,并提出了具体的解决方法。     

一类中立型泛函微分系统周期解存在性问题

首先对线性差分算子M:[Mx](t)=z(t)-Cx(t-r)的性质进行了研究,在此基础上利用Mawhin重合度拓展定理研究了一类具偏差变元的中立型泛函微分系统的周期解问题,得到了周期解存在性的新结论.本文的矩阵C仅为一般的实方阵,不必为实对称阵,因而结果改进和推广了已有工作.此外,本文周期解先验界估计方法与已有工作也不相同.     

原位聚合PPy/g-C_3N_4复合物增强可见光催化性能（英文）

近年发展起来的低能耗、高效率的光催化技术为解决环境污染和能源短缺等问题提供了新途径.在众多光催化材料中,非金属石墨相氮化碳(g-C_3N_4)半导体材料因其化学稳定性和热稳定性优异、能带结构易调控、前驱体价格低廉等特点备受关注.然而,g-C_3N_4的光生电子-空穴对极易复合,比表面积较小,不能充分利用太阳光等,因而其光催化活性较低.目前,为了提高g-C_3N_4光催化性能,多采用金属或非金属元素掺杂、与其他物质形成异质结、与其他半导体材料进行共聚合等方式.其中,共聚合有利于调节g-C_3N_4内部电子结构,促进g-C_3N_4光生载流子的分离与迁移,而且具有高度离域π-π*共轭结构的导电聚合物更适合与g-C_3N_4进行共聚合,从而进一步提高g-C_3N_4的光催化性能.本文采用原位聚合法制备合成了导电聚吡咯(PPy)与g-C_3N_4的复合材料,并以10 mg L.1亚甲基蓝(MB)作为目标污染物评价其可见光催化性能.经X射线衍射、扫描电镜、透射电镜、比表面积、紫外-可见光谱等一系列表征分析可知,PPy/g-C_3N_4复合物(002)晶面衍射峰强度较g-C_3N_4减弱,表明PPy抑制了g-C_3N_4晶型生长,但未影响其晶型结构.不规则薄片状g-C_3N_4表面均匀地负载有非晶态PPy颗粒,复合物微观形貌发生变化.PPy与g-C_3N_4共轭芳香环层间堆积形成的介孔、大孔孔径和孔容积均增加,比表面积增大了7 m2 g.1,使目标污染物能与光催化剂表面活性物质充分接触反应.同时,PPy具有较强吸光系数,对可见光能完全吸收;PPy/g-C_3N_4复合物的可见光吸收边带发生红移,呈现出较g-C_3N_4更强的可见光吸收能力,提高对可见光的利用效率.光催化降解MB实验结果表明,在可见光(12 W LED灯)照射2 h后,含有0.75 wt%PPy的复合样品0.75PPy/g-C_3N_4表现出最佳光催化活性,MB降解效率为99%;且污染物光催化降解过程符合准一级动力学,反应速率常数(0.03773 min~(-1))约为同条件下g-C_3N_4(0.01284 min~(-1))的3倍.自由基捕获测试实验表明,g-C_3N_4和0.75PPy/g-C_3N_4均产生了·O~2~-自由基,但后者的·O2~-信号更强.这是因为PPy也可吸收可见光并激发出电子,该电子转移到g-C_3N_4导带,再与其本身的电子共同与O2反应生成·O_2-.然而只有0.75PPy/g-C_3N_4在光催化过程中产生了·OH自由基,是由于g-C_3N_4的价带(+1.4 eV)较H_2O/·OH(+2.38 eV vs.NHE)和OH~-/·OH(+1.99 eV vs.NHE)小,此价带上的h~+不能与H_2O和OH~-反应生成·OH,而是由生成的·O_2~-再与e~-和H~+反应产生,即·O_2~-+2H+2e~-CB→·OH+OH~-.本文最后分析了以·O_2~-和·OH作为主要活性物质的PPy/g-C_3N_4复合物光催化降解污染物的反应机理,PPy具有强导电性,可作为光生电子和空穴的传输通道,抑制其在g-C_3N_4表面的复合.     

CuO掺杂对KNN-BNZ无铅压电陶瓷性能的影响

采用传统固相反应法制备了0.97K05Na0.5NbO3-0.03Bi0.5Na0.5ZrO3+xmo1; CuO (0.97KNN-0.03BNZ+xCu)无铅压电陶瓷.研究不同CuO掺量(x=0、0.5、1、2、3和4)对0.97KNN-0.03BNZ陶瓷的显微结构和电学性能的影响.结果表明:CuO的掺入使材料出现“硬化”现象,机械品质因数Qm有明显提高,矫顽场显著增大.CuO的掺入量在3;时,样品的综合性能最佳:压电常数(d33)为137 pC/N,机电耦合系数(kp)为0.30,机械品质因数(Qm)为238,介电损耗(tanδ)为1.5;.另外,从SEM图片中可以看出:0.97KNN-0.03BNZ压电陶瓷材料的平均晶粒尺寸随着CuO掺入量的增加明显增大,这表明CuO有烧结助熔作用,能降低烧成温度.     

用flash制作密立根油滴实验课件

密立根首创的油滴实验精确的测量出基本电荷,是一个经典的近代物理实验。Flash是多媒体课件制作的重要工具。     

零电磁材料聚焦器

基于二维LC网络,设计了一种零电磁材料聚焦器,导出了该器件等效节点电压分布矩阵,研究了聚焦区域为三角形、四边形、六边形、八边形的电磁聚焦器,并在此基础上仿真了形状和尺寸对其聚焦特性的影响。结果表明:当聚焦区域小于两倍波长时,该器件的特性与聚焦区域的形状无关; 当聚焦区域逐渐增大时,焦点的能量也随之增强; 当聚焦区域大于两倍波长时,主焦点逐渐消失,同时将产生多个副焦点。