长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

介孔分子筛的制备与苯加氢反应的催化性能

1992年美国Mobil公司的研究人员首次报道合成出具有规则孔结构的M41S系列介孔分子筛材料.由于介孔材料独特的性质,引起了人们极大的兴趣,在其合成与性能等方面进行了大量的研究,合成出了多种系列不同性能的介孔分子筛,并研究了介孔分子筛作为催化剂或催化剂载体在各类催化反应中的催化性能.     

Distributed Bragg reflector laser(1.8 μm) with 10 nm wavelength tuning range

We report a 1.8 μm two-section distributed Bragg reflector laser using butt-jointed In Ga As P bulk material as the waveguide core layer. The threshold current is 17 m A and the output power is 8 m W on average. The threshold current, output power, and emitting wavelength dependences on temperature are measured. The obtained wavelength tuning range is 10 nm. This device has potential applications in simultaneous multiple-gas detection.     

Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE

InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAsmultiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy(MOVPE). The results of double crystal X-ray diffraction (DCXRD) revealed that strain relief had beenpartly accommodated by the misfit dislocation formation in the strained MQW material. It led to thatthe full width half maximums (FWHMs) of superlattice satellite peaks are broader than those of SCMQWstructures, and there was no detectable room temperature photoluminecence(RT-PL)for the strained     

介孔二氧化钛的制备及铜（Ⅱ）对其光催化氧化活性的影响

采用十六烷基三甲基溴化铵为模板剂,钛酸正四丁酯为原料,水热法合成出孔径为4.4 nm介孔二氧化钛.通过X射线粉末衍射仪、透射电子显微镜和氮气吸附技术对样品进行了表征.以甲基橙为模型化合物,考察了铜(Ⅱ)对介孔二氧化钛光催化活性的影响,研究表明:介孔二氧化钛的光催化活性与P25纳米二氧化钛相当,铜(Ⅱ)的加入提高了介孔二氧化钛的光催化活性,甲基橙的光催化降解速率与光强度成正比.     

采用单边大光腔结构改善电吸收调制器的光场分布

设计并制备了具有单边大光腔结构的半导体电吸收(electroabsorption，EA)调制器.模拟和测试的结果均表明：单边大光腔结构能有效地改善EA调制器的光场分布，使椭圆形的近场光斑变得圆形化，从而达到与圆形模式光纤之间的匹配，有利于提高耦合效率.     

含钴介孔分子筛催化热解乙醇制备纳米碳管

以CTAB为模板剂,硅酸钠、氯化钴为原料,通过水热法合成含钴介孔分子筛(Co-MCM-41)。以所合成的Co-MCM-41做催化剂,采用化学气相沉积(CVD)法催化热解乙醇制备纳米碳管。通过XRD、FT-IR、TEM、N2吸附-脱附和Raman光谱等分析手段对所合成的介孔分子筛和纳米碳管进行了表征。结果表明:合成的Co-MCM-41样品具有MCM-41的介孔结构,比表面积较大且介孔有序性较好。以所合成的含钴介孔分子筛催化热解乙醇制备出管径均匀、管壁较厚、顶端开口的多壁纳米碳管。     

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs （100） substrates by using MOCVD

Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.     

含Co纳米介孔分子筛的制备与表征

用两步水热法合成出了含Co介孔分子筛,采用XRD,FT-IR,TPR,AFM,BET,B JH等方法对样品的物化性能进行了表征.结果表明合成出了纳米级具有介孔结构的CoMCM-41.样品在550℃焙烧可以将模板剂有效去除而不影响孔结构.所得CoMCM-41比表面积大于500 m2/g,平均孔径分布为3.57 nm,粒径分布在20~40 nm范围内.     

Dual-Wavelength Distributed Feedback Laser for CWDM Based on Non-Identical Quantum Well

Using non-identical quantum wells as the active material, a new distributed-feedback laser is fabricated with period varied Bragg grating. The full width at half maximum of I 15 nm is observed in the amplified spontaneous emission spectrum of this material, which is flatter and wider than that of the identical quantum wells. Two wavelengths of 1.51 μm and 1.53 μm are realized under different work conditions. The side-mode suppression ratios of both wavelengths reach 40 dB. This device can be used as the light source of coarse wavelength division multiplexer communication systems.