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We report a 1.8 μm two-section distributed Bragg reflector laser using butt-jointed In Ga As P bulk material as the waveguide core layer. The threshold current is 17 m A and the output power is 8 m W on average. The threshold current, output power, and emitting wavelength dependences on temperature are measured. The obtained wavelength tuning range is 10 nm. This device has potential applications in simultaneous multiple-gas detection. 相似文献
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Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si(001) substrate 下载免费PDF全文
This letter reports the nanoscale spatial phase modulation of Ga As growth in V-grooved trenches fabricated on a Si(001) substrate by metal–organic vapor-phase epitaxy. Two hexagonal Ga As regions with high density of stacking faults parallel to Si {111} surfaces are observed. A strain-relieved and defect-free cubic phase Ga As was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of Ga As/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of Ga As selectively grown on this artificially manipulated surface. 相似文献
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