Distributed Bragg reflector laser(1.8 μm) with 10 nm wavelength tuning range

We report a 1.8 μm two-section distributed Bragg reflector laser using butt-jointed In Ga As P bulk material as the waveguide core layer. The threshold current is 17 m A and the output power is 8 m W on average. The threshold current, output power, and emitting wavelength dependences on temperature are measured. The obtained wavelength tuning range is 10 nm. This device has potential applications in simultaneous multiple-gas detection.     

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

In the last two decades, m-v compound semi- conductor materials grown on elemental semiconduc- tor substrates have attracted much attention due to their potential applications in high-efficiency so- lar cells, photodetectors, quantum-dot （QD） lasers, and metal-oxide-semiconductor field-effect transistors （MOSFETs）. Due to their extremely high electron mobility, III-V semiconductors such as GaAs, InGaAs and InAs are believed to be chan- nel materials for future complementary metal-oxide- semiconductor （CMOS） technology.CMOS tran- sistors on Ge substrates with high mobility In- GaAs/Ge channels have already been fabricated by using a wafer bonding technique, which is a promis- ing step for such a device on Si.     

新一代SiC功率MOSFET器件研究进展

自2017年报道SiC(碳化硅)功率金属-氧化物半导体场效应晶体管(MOSFET)技术进展以来,针对器件比导通电阻(RON,SP)高等问题不断优化器件结构设计,本课题组改进关键加工工艺,使1200 V SiC MOSFET的RON,SP从8 mΩ·cm2降低到4.8 mΩ·cm2.与此同时,本课题组采用新一代SiC MOSFET设计和工艺技术研制出6.5 kV、10 kV以及15 kV等高压低导通电阻SiC MOSFET,其中10 kV和15 kV器件的比导通电阻分别为144 mΩ·cm2和204 mΩ·cm2,接近单极型SiC器件的理论极限.     

Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si(001) substrate

This letter reports the nanoscale spatial phase modulation of Ga As growth in V-grooved trenches fabricated on a Si(001) substrate by metal–organic vapor-phase epitaxy. Two hexagonal Ga As regions with high density of stacking faults parallel to Si {111} surfaces are observed. A strain-relieved and defect-free cubic phase Ga As was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of Ga As/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of Ga As selectively grown on this artificially manipulated surface.