50MeV/u~(12)C离子实验靶区出射中子角分布实验测量

本文用氟和碳阈探测器对50MeV/u~(12)C离子引起的重离子反应实验靶区E_n>11MeV和E_n>20MeV中子的角分布进行了实验测量,结果显示出明显的前冲分布,较高能量的中子具有更强的前冲趋势.     

离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.     

4-烷硒基4-脱氧4′-去甲表鬼臼毒素衍生物的合成和抗肿瘤活性

4-溴-4-脱氧-4′-去甲表鬼臼毒素与硒脲作用生成假硒脲盐。该化合物在三乙胺作用下转化为类似于硒醇的不稳定中间体;而在氮气保护下,与活泼卤代烃室温反应即可得到相应的硒醚。六个硒取代的化合物均显示良好的体外抑制L1210及KB细胞活性。     

中能重离子微束辐照装置的研制

微束辐照装置是将辐照样品的束斑缩小到微米量级,能够对辐照粒子进行准确定位和精确计数的实验平台,是开展辐照材料学、辐照生物学、辐照生物医学以及微加工的有力工具.中国科学院近代物理研究所(IMP)正在研制中能重离子微柬辐照装置.该装置以兰州重离子加速器(HIRFL)系统提供的中能和低能重离子束流为基础,采用磁聚焦方式形成微米束.束运线上两台铅垂方向的偏转磁铁辅以四极磁铁构成对称消色差系统,将束流导向地下室,再用高梯度的三组合四极透镜强聚焦形成微米束斑,在真空中或大气中辐照样品.它将成为国内首台能够提供从低能(10MeV/u)到中能(100MeV/u)的重离子微束的公共实验平台,用于定位、定量照射靶物质(生物细胞、组织或其它非生物材料等),有助于深入揭示重离子与物质相互作用的本质,也为探索重离子辐照效应的应用提供新的手段.     

高压原子物理实验平台和物理研究规划

介绍了高压原子物理平台束流线的主要结构和特点,简要分析了利用高压平台真空原子分子物理研究需求,讨论了开展原子分子物理、表面物理、材料物理和生物物理相关的物理研究的可能性.     

GeV能量的Fe离子在C60薄膜中的辐照效应研究

利用傅立叶转换红外光谱和Raman谱仪分析了0.98 GeV的Fe离子在电子能损Se为3.5 keV/nm时， 不同辐照剂量（5×1010 —8×1013 ions/cm2)下， 在C60薄膜中引起的辐照损伤效应。 分析表明， Fe离子辐照引起了C60分子的聚合与损伤。 在辐照剂量达到一中间值1×1012 ions/cm2， C60分子的损伤得到部分恢复， 归因于电子激发引起的退火效应。 通过对Raman数据的拟合分析， 演绎出Fe离子辐照在C60材料中形成的潜径迹截面或引起损伤的截面约为1.32×10-14 cm2。     

Comparison of helium bubble formation in F82H,ODS, SIMP and T91 steels irradiated by Fe and He ions simultaneously

Ferritic-martensitic steels and ODS steels are attractive candidates for structural materials in advanced nuclear-power systems due to their good swelling resistance. Four kinds of steels, F82 H, 15 Cr-ODS, SIMP and T91, are investigated in this study. We take 6.4 Me V Fe3+ ions and energy-degraded 1.0 Me V He+ ions in the irradiation of these materials to 5 dpa and 60 appm He/dpa, 200 appm He/dpa and 600 appm He/dpa at 300℃ and 450℃, respectively. The bubble formation and distribution are investigated by transmission electron microscopy(TEM). Formation and distribution of the bubbles in the four investigated steels are compared. The influence of irradiation temperature and helium injection ratio on bubble formation is discussed. It is found that there appears to be homogenously distributed bubbles at 300℃ irradiation while heterogeneously distributed bubbles at 450℃ irradiation.     

Ionic conductivity study on electron beam irradiated polyacrylonitrile-polyethylene oxide gel

Different mass percent polyacrylonitrile (PAN)-polyethylene oxide (PEO) gels were prepared and irradiated by an electron beam (EB) with energy of 1.0 MeV to the dose ranging from 13 kGy to 260 kGy.The gels were analysed by using Fourier transform infrared spectrum,gel fraction and ionic conductivity (IC) measurement.The results show that the gel is crosslinked by EB irradiation,the crosslinking degree rises with the increasing EB irradiation dose (ID) and the mass percents of both PAN and PEO contribute a lot to the crosslinking;in addition,EB irradiation can promote the IC of PAN-PEO gels.There exists an optimum irradiation dose,at which the IC can increase dramatically.The IC changes of the PAN-PEO gels along with ID are divided into three regions:IC rapidly increasing region,IC decreasing region and IC balanced region.The cause of the change can be ascribed to two aspects,gel capturing electron degree and crosslinking degree.By comparing the IC-ID curves of different mass percents of PAN and PEO in gel,we found that PAN plays a more important role for gel IC promotion than PEO,since addition of PAN in gel causes the IC-ID curve sharper,while addition of PEO in gel causes the curve milder.     

15.14MeV/u 136Xe离子引起的单粒子效应

研究了15.14MeV/u ¹³⁶Xe离子在不同批次的32k×8bits静态存储器中所引起的单粒子效应.获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系.将单粒子效应截面与灵敏区中沉积的能量相联系,而不是线性能量转移(LET)值.估计了灵敏体积的深度和死层的厚度.     

快重离子辐照C60薄膜的强电子激发效应研究

利用能量为2.0GeV的¹³⁶Xe和2.7GeV的²³⁸U离子对C₆₀薄膜进行了辐照,并用傅立叶变换红外光谱、X射线衍射谱和拉曼散射技术分析了辐照过的C₆₀样品,在傅立叶变换红外光谱上,首次观察到一个位于670cm^－1处的,表征未知结构的新峰,研究了其强度随电子能损和辐照剂量的变化规律.分析结果表明,电子能量转移主导了C₆₀薄膜的损伤过程;而损伤的部分恢复是由强电子激发的退火效应引起的;另外,离子的速度在损伤的建立过程中也起了一定的作用