GeV能量的Fe离子在C60薄膜中的辐照效应研究

利用傅立叶转换红外光谱和Raman谱仪分析了0.98 GeV的Fe离子在电子能损Se为3.5 keV/nm时， 不同辐照剂量（5×1010 —8×1013 ions/cm2)下， 在C60薄膜中引起的辐照损伤效应。 分析表明， Fe离子辐照引起了C60分子的聚合与损伤。 在辐照剂量达到一中间值1×1012 ions/cm2， C60分子的损伤得到部分恢复， 归因于电子激发引起的退火效应。 通过对Raman数据的拟合分析， 演绎出Fe离子辐照在C60材料中形成的潜径迹截面或引起损伤的截面约为1.32×10-14 cm2。

Irradition Effect in C60 Films Induced by GeV Fe Ions

The irradiation effects of C60 films induced by 0.98 GeV Fe ions at the same electronic energy loss of 3.5 keV/nm and different irradiation dose ranging from 5×1010 to 8×1013 ions/cm2 ， were analyzed by Raman scattering and Fourier transform infrared (FTIR) spectroscopes. The analysis results indicate that the irradiation results in a molecular polymerization and destruction of the C60. The partial recovery of the damage at the intermediate value of irradiation dose， 1×1012 ions/cm2， was caused by an annealing effect of electronic energy loss. The ion track or damage cross section σ deduced from the Raman data was 1.32×10-14 cm2.