短尾蝮新突触前毒素和细胞毒素的纯化及部分序列

用反相高效液相色谱技术对中国产短尾蝮蛇(Agkistrodon blomhoffii brevicaudus)毒中的毒性蛋白重新进行了纯化,结果从中获得了3个由约122个氨基酸残基构成的毒蛋白(AgTx-1,AgTx-2和AgTx-3)。三者对小鼠的LD_(50)分别为0.075,0.51和6.6mg/kg。在小鸡颈二腹肌标本上的毒理分析表明,AgTx-1和AgTx-2均在阻遏接头传递之后,亦不影响肌肉对乙酰胆碱的敏感性。在AgTx-3的作用下,标本的间接收缩则由于舒张不全而逐渐变小,最后停止在挛缩状态。部分氨基酸序列测定结果又表明,AgTx-1和AgTx-2的N-端32肽序列完全相同。考虑到AgTx-1的LD_(50)在粗毒中的含量及其序列等均与前文报道的β-AgTx极为相似,故我们认定它们为同一毒素,并定名为β_1-AgTx。而AgTx-2则应是新的突触前毒素,相应地定名为β_2-AgTx,至于AgTx-3便是新发现的细胞毒素。     

氮化镓单晶生长研究进展

氮化镓(GaN)作为第三代宽禁带半导体核心材料之一,具有高击穿场强、高饱和电子漂移速率、抗辐射能力强和良好的化学稳定性等优良特性,是制作宽波谱、高功率、高效率光电子、电力电子和微电子的理想材料.受制于氮化镓单晶衬底的尺寸、产能及成本的影响,当前的GaN基器件主要基于异质衬底(硅、碳化硅、蓝宝石等)制作而成,GaN单晶衬底的缺乏已成为制约GaN器件发展的瓶颈.近年来,国内外在GaN单晶衬底制备方面取得了较大的进展.本文综述了氮化镓单晶生长的最新进展,包括氢化物气相外延法、氨热法和钠助熔剂法的研究进展,分析了各生长方法面临的挑战与机遇,并对氮化镓单晶材料的发展趋势讲行了展望.     

Improvement of Properties of p-GaN by Mg Delta Doping

The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.     

Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.     

Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

We report the enhancement of the light extraction of InGaN-based green light emitting diodes （LEDs） via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.     

Optical Defect in GaN-Based Laser Diodes Detected by Cathodoluminescence

GaN-based laser diodes （LDs） with 399 nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition （MOCVD）. Electroluminescence spectra of the fabricated LDs show that the LDs from some grown wafers failed to emit laser. The SEM and XRD results show the similar surface morphology and interface qualities of multi quantum wells （MQWs） and super-lattices between LDs that succeed and fail to emit laser. However, the cathodoluminescence （CL） measurements reveal a kind of optical defect rather than structural defect in un-emitted LDs. Further depth-dependent CL imaging observation indicates that such optical defects originate from the MQWs to the surface of LDs as a non-irradiative recombination centre that should cause the failure of laser emitting of LDs.     

氮化镓单晶的液相生长

氮化镓(GaN)具有高击穿场强、高饱和电子漂移速率、抗辐射能力强和良好的化学稳定性等优良特性,是制作宽波谱、高功率、高效率光电子、电力电子和微电子的理想衬底材料.除气相法(包括HVPE(氢化物气相外延)、MOCVD(金属有机化合物化学气相沉淀)、MBE(分子束外延))生长GaN单晶外,液相法(包括氨热法和助熔剂法)近几年在制备GaN单晶方面取得了较大的进展.本文介绍了氨热法和助熔剂法的生长原理、装备特点及生长习性;综述了两种液相生长方法的研究历程及研究进展,并对液相法生长GaN单晶的发展趋势及主要挑战进行了展望.     

Er~(3+)和Eu~(3+)共注入GaN的光学特性和能量传递机制

采用离子注入法在GaN薄膜中实现了Er~(3+)和Eu~(3+)离子的共掺杂.以阴极荧光光谱仪为主要表征手段,研究样品的光学特性和能量传递机理.在300K温度下,Er~(3+)和Eu~(3+)共掺杂GaN薄膜能够实现绿光和红光的同时发射.随着Er~(3+)离子掺杂剂量的增加,Eu~(3+)离子相关发光峰的强度减弱,Er~(3+)离子对应的两个相关发光峰强度比值减小,表明Er~(3+)和Eu~(3+)离子之间发生了能量传递,能量传递的方向为Eu~(3+)→Er~(3+).变温阴极荧光光谱显示,Er~(3+)离子的2H11/2和4S3/2两个能态相关的跃迁峰相对强度比值随着温度升高而降低,主要是由两个能级之间的热耦合导致.改变Er~(3+)离子的掺杂剂量,能够调控GaN:Er~(3+)/Eu~(3+)样品的光学色度坐标和色温,表明此材料可用于发光器件.     

石墨烯掺杂LiFePO4电极材料的合成及其电化学性能

采用水热辅助法合成石墨烯改性的LiFePO4多孔微球电极材料.并对材料进行了X射线衍射(XRD),扫描电子显微镜(SEM),透射电子显微镜(TEM),傅里叶变换红外(FT-IR)光谱,充放电等表征.从结果可以看出在2 mol·L-1LiNO3电解液体系中单纯包碳的LiFePO4微球在1C、50C倍率时的比容量分别为137、64 mAh·g-1,而石墨烯改性的LiFePO4微球的比容量分别为141、105 mAh·g-1,表现出较好的倍率特性.恒流循环充放电测试60次后两种材料容量保持率分别为70.2％、83.7％.说明掺杂石墨烯构成的三维导电网络能明显改善LiFePO4的电化学性能.     

高温相偏硼酸钡α-BaB2O4晶体的结晶习性

采用Cz法生长了高温相偏硼酸钡α-BaB2O4晶体,尺寸为φ50mm×40mm,晶体无色透明,在He-Ne激光照射下无散射颗粒,无生长条纹.在生长过程中,α-BaB2O4晶体存在强烈的晶面显露特性,主要与晶体所属点群R-3c有密切关系,本文采用周期键链PBC理论分析了α-BaB2O4晶体的结晶习性.在实验上根据晶面夹角的关系,结合X射线劳埃衍射照相的方法标定了晶体的显露面指数,两者很好地吻合.α-BaB2O4晶体主要存在了3组显露面即三方锥面S{1-102}、六方柱面P{11-20}和菱面体T{21-34},且显露顺序为S＞P＞T,三方锥面S与六方柱面P的晶棱方向为[-1101],三方锥面S与菱面体T面的晶棱方向为[-4223],在晶体放肩部位处有对称分布的6条晶棱,分别对应于两组晶向[10k1i],[11k2i],i=1,2,3在一般情况下,k1i≠12i.