超宽禁带半导体β-Ga_2O_3及深紫外透明电极、日盲探测器的研究进展

β-Ga_2O_3是一种新型的超宽禁带氧化物半导体,禁带宽度约为4.9 eV,对应日盲区,对波长大于253 nm的深紫外一可见光具有高的透过率,是天然的日盲紫外探测及深紫外透明电极材料.本文介绍了Ga_20_3材料的晶体结构、基本物性与器件应用,并综述了β-Ga_2O_3在深紫外透明导电电极和日盲紫外探测器中的最新研究进展.Sn掺杂的Ga_2O_3薄膜电导率可达到32.3 S/cm,透过率大于88%,但离商业化的透明导电电极还存在较大差距.在日盲紫外探测器应用方面,基于异质结结构的器件展现出更高的光响应度和更快的响应速度,ZnO/Ga_2O_3核/壳微米线的探测器综合性能最佳,在-6 V偏压下其对254 nm深紫外光的光响应度达1.3×10~3A/W,响应时间为20μs.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

热处理对富硅氧化硅薄膜中硅纳米晶形成的影响

采用磁控溅射法制备了富硅氧化硅薄膜, 然后分别经过一步热处理、两步热处理和快速热处理制备了镶嵌有硅纳米晶的氧化硅薄膜. 实验结果表明, 在硅含量为～ 42.63 at.%的富硅氧化硅薄膜中, 三种热处理均能形成10¹²/cm²量级的硅纳米晶. 其中在两步热处理中, 硅纳米晶的密度最高, 达到2.2× 10¹²/cm², 并且尺寸均匀、结晶完整性好; 一步热处理后的样品中, 硅纳米晶密度较低, 并且部分纳米晶结晶不充分; 快速热处理后的样品中, 硅纳米晶密度最低、尺寸分布不均匀, 并且存在孪晶结构. 分析认为, 热处理初始阶段的形核过程对纳米晶的密度及微观结构有着重要的影响, 两步热处理中的低温段促进了纳米晶的成核, 有助于形成高密度高质量硅纳米晶.     

A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response

A 4$\times $4 beta-phase gallium oxide ($\beta $-Ga$_{2}$O$_{3}$) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga$_{2}$O$_{3}$ thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6$\times $10$^{7}$, photo responsivity of 634.15 A$\cdot$W$^{-1}$, specific detectivity of 5.93$\times $10$^{11}$ cm$\cdot$Hz$^{1/2}\cdot$W$^{-1}$ (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.     

大规模制备Ni80Fe20纳米线阵列及其磁学特性研究

利用电化学沉积方法在高度有序纳米孔氧化铝模板中大规模制备了Ni80 Fe20纳米线阵列.该方法得到的Ni80Fe20纳米线产率高(约1012-1013/cm2),而且这些纳米线阵列具有(111)择优生长取向和很高的纵横比.与体材料相比,这些Ni80Fe20纳米线阵列具有更高的矫顽力和较大的剩磁比等性能,在微型磁性元件领域将具有广泛应用前景.     

La2/3Ca1/3MnO3/Eu2CuO4/La2/3Ca1/3MnO3磁性隧道结的制备与表征

采用磁控溅射,紫外线光刻和离子束刻蚀制备了La2/3Ca1/3MnO3lEu2CuO4/La2/3Ca1/3MnO3磁性隧道结.通过对获得的磁性隧道结的Ⅰ-Ⅴ特性测量,发现非线性的Ⅰ-Ⅴ特性,显示结样品的隧穿特性.有趣的是发现在电极材料La2/3Ca1/3MnO3的金属-绝缘体转变温度(Tp)以下,Ⅰ-Ⅴ曲线出现一个跳变.随着温度降低,开始出现跳变的临界电流增大,但是跳变都发生在同样的电压下～209mV.当电流增大或减小在跳变点附近出现回滞.这一跳变只发生在铁磁金属态,表明这是一个磁性相关联的效应,可能对应一种新的磁性开关过程.虽然,目前对这一现象背后的物理机理还不清楚,但是,这一现象有可能在未来自旋电子学器件方面具有潜在的应用价值.     

响应范围可调的pH荧光传感器的构建及其性能研究

合成并表征了化合物N,N'-二谷氨酸铵盐-3,4,9,10-苝四羧酸二酰亚胺(PTCDG).此化合物水溶性好,荧光量子产率高.基于此,设计了一组新颖的响应范围可调的pH荧光传感器.PTCDG与顺磁性的Fe3+可按1∶1络合,络合常数为6.5×105,考察了其它金属离子的影响,表明PTCDG对Fe3+有良好的选择性.PTCDG与Fe3+结合后,由于PET效应,荧光猝灭,伴随pH值增大,Fe3+与OH-形成Fe(OH)3,从体系中沉淀出来,荧光团被释放,从而荧光恢复.在不同的Fe3+的良好配体存在条件下,形成Fe(OH)3的pH范围向碱性方向移动.PTCDG,PTCDG/Fe3+,PTCDG/Fe3+/三乙胺,PTCDG/Fe3+/吡啶、PTCDG/Fe3+/邻菲罗啉的响应范围分别为4.0～6.0,5.0～10,5.0～7.0,6.0～8.0和7.0～9.0,涵盖了pH值4.0～10的区间,实现了响应范围的可调.考察了内在的干扰物对该传感器的效能的影响,探讨了此体系的荧光传感机理.此传感器具有很多优异的性能,响应的范围可调且近中性,荧光和颜色变化明显,响应快,具有较高的灵敏性.     

La1.8Sr0.2CuO4/La1.9Sr0.1CuO4超导双层薄膜的制备及电学输运性能研究

采用Nd:YAG固体激光器在SrTiO3(STO)衬底上成功制备了具有c轴取向的过掺杂La1.8Sr0.2CuO4和欠掺杂La1.9Sr0.1CuO4超导薄膜。分别对薄膜的晶体结构、电学输运性能进行了研究。通过晶体结构分析表明超导薄膜沿<001>晶向生长,沉积后的薄膜超导转变温度(TC)随着薄膜厚度(20～200 nm)的增加而逐渐升高,显示薄膜由二维特征向三维特征过渡。在双层薄膜La1.8Sr0.2CuO4/La1.9Sr0.1CuO4结构中,其电学输运性能和所加电场的方向有很大关联,反映出电场的方向影响了超导薄膜中空穴载流子的扩散,进而影响了薄膜的超导转变温度和电学输运性能。     

Enhancing low-field magnetoresistance of La0.67Ca0.33MnO3 films deposited on anodized aluminium-oxide membranes

In this paper we report a new method to fabricate nanostructured films, La0.67Ca0.33MnO3 （LCMO） nanostructured films have been fabricated by using pulsed electron beam deposition （PED） on anodized aluminium oxide （AAO） membranes, The magnetic and electronic transport properties are investigated by using the Quantum Design physics properties measurement system （PPMS） and magnetic properties measurement system （MPMS）. The resistance peak temperature （Tp） is about 85 K and the Curie temperature （To） is about 250 K for the LCMO film on an AAO membrane with a pore diameter of 20nm. Large magnetoresistance ratio （MR） is observed near Tp. The MR is as high as 85% under 1 T magnetic field. The great enhancement of MR at low magnetic fields could be attributed to the lattice distortion and the grain boundary that are induced by the nanopores on the AAO membrane.     

T+OD体系的同位素交换反应动力学

基于DTO(Χ¹ A₁)分子的多体展式分析势能函数,用准经典的Monte Carlo轨迹法研究了T+OD(0,0)体系的分子反应动力学过程. 结果表明,在碰撞能较低(小于121.34 kJ ·mol^-1)时,可以生成长寿命DTO(Χ¹ A₁)络合物,并且该络合反应是有阈能反应,这与用多体项展式理论计算的DTO分子势能曲线结果一致. 随碰撞能增加,逐渐出现置换产物DT和OT,最终分子被完全碰散成D,T和O原子,而且反应T+OD(0,0)→OT+D,T+OD(0,0)→DT+O和T+OD(0,0)→D+T+O也是有阈能反应. 由于D和T原子的同位素效应,T+OD(0,0)与D+OT(0,0)体系的碰撞反应特征存在非一致性. 关键词： DTO 分子反应动力学 轨线 反应截面