| Abstract: | A 4$\times $4 beta-phase gallium oxide ($\beta $-Ga$_{2}$O$_{3}$) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga$_{2}$O$_{3}$ thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6$\times $10$^{7}$, photo responsivity of 634.15 A$\cdot$W$^{-1}$, specific detectivity of 5.93$\times $10$^{11}$ cm$\cdot$Hz$^{1/2}\cdot$W$^{-1}$ (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity. |
