应急物流中库存与运输集成决策模型研究

已有的研究表明,在物流管理中权衡库存与运输成本之间的关系,实现两者的集成决策,可改进系统的运作绩效。在给定的仓库布局条件下,针对应急物流的配送特点,构建了单周期物资的运输与库存集成决策的随机规划模型。考虑到模型求解的复杂性,首先通过对模型的分析,获得了最优解的性质和上界,然后设计了基于BP神经网络和遗传算法的混合智能算法。在算例分析部分,揭示了服务水平、运输、和库存成本在应急物流中之间的复杂关系,说明合理权衡三者之间的关系,可以提升应急物流的管理水平。     

气相色谱-质谱法测定纺织品中对氯苯胺

采用气相色谱-质谱法测定纺织品中对氯苯胺的含量,研究了对氯苯胺溶液的储存稳定性,结果表明对氯苯胺标准溶液和样品溶液在低温(小于5℃)、高浓度(例如30 mg·L-1)下的储存稳定性好。在最佳的分析条件下,进行了全毛精纺花呢样品的加标回收试验,加标水平为10.0,20.0,30.0 mg·kg-1,回收率分别为86.0%,100.6%,97.6%,相对标准偏差(n=6)小于9.0%。     

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor(BJT) and the existence of the source plays an important role in supply voltage variation.     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

怎样指导学生写化学小论文

21世纪是科技高度发达的世纪,培养创造型新一代应当成为时代教学的主旋律。具体在化学教学中,引导学生写小论文是培养创造型人才的有效途径之一。     

化学学习兴趣的测量——高中学生化学学习兴趣水平的调查报告

化学学习兴趣是影响化学学习的变量,它与化学成绩的相关度究竞如何,是一个颇有理论意义和现实意义的研究课题。本文尝试定量研究化学学习兴趣与化学学习成绩的相关度,并建立测量化学学习兴趣(强度)水平的量表,提高研究的效度和信度。     

PMoO/SiO2非均相催化碘离子氧化研究

以正硅酸乙酯(TEOS)为硅源,采用溶胶-凝胶法制备一系列非均相多钼氧簇催化剂(PMoO/SiO_2)。通过FT-IR、XRD、SEM等对其结构加以表征。以过氧化氢为氧化剂、PMoO/SiO_2为催化剂,研究PMoO/SiO_2的负载量、反应温度、pH对催化活性的影响,利用计算机模拟揭示多钼氧簇与二氧化硅之间的相互作用。研究表明:催化剂PMoO/SiO_2在负载量为25%、反应温度45℃、pH=1.4条件下碘离子的氧化反应速率为9.25×10~(-5)mol/(L*s),与未添加催化剂相比,PMoO/SiO_2的催化效果提高6.85×10~3倍。PMoO倾向于物理吸附在不定形SiO_2的富Si面,同时以形成O-H键和O-Si键的形式发生化学相互作用,使得电子从不定形SiO_2向PMoO表面转移,发生协同催化作用。催化剂在循环使用十次之后催化碘离子转化率仍高达86.5%,循环使用性好,无过氧化,具有较好的工业应用前景。