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排序方式: 共有89条查询结果,搜索用时 15 毫秒
1.
Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors 下载免费PDF全文
This paper proposes a universal spin-dependent variable
range hopping theoretical model to describe various experimental
transport phenomena observed in wide-band-gap oxide ferromagnetic
semiconductors with high transition metal concentration. The
contributions of the `hard gap' energy, Coulomb interaction,
correlation energy, and exchange interaction to the electrical
transport are considered in the universal variable range hopping
theoretical model. By fitting the temperature and magnetic field
dependence of the experimental sheet resistance to the theoretical
model, the spin polarization ratio of electrical carriers near the Fermi
level and interactions between electrical carriers can be
obtained. 相似文献
2.
Density functional theory within the local density approximation is used to investigate the effect of the oxygen vacancy on the LaGaO_3/SrTiO_3(001) heterojunction. It is found that the energy favorable configuration is the oxygen vacancy located at the 3~(rd) layer of the STO substrate, and the antiferrodistortive distortion is induced by the oxygen vacancy introduced on the SrTiO_3 side. Compared with the heterojunction without introducing oxygen vacancy, the heterojunction with introducing the oxygen vacancy does not change the origin of the two-dimensional electron gas(2DEG), that is, the 2DEG still originates from the d_(xy) electrons, which are split from the t~(2g) states of Ti atom at interface; however the oxygen vacancy is not beneficial to the confinement of the 2DEG. The extra electrons caused by the oxygen vacancy dominantly occupy the 3d_(x~2-y~2) orbitals of the Ti atom nearest to the oxygen vacancy, thus the density of carrier is enhanced by one order of magnitude due to the introduction of oxygen vacancy compared with the density of the ideal structure heterojunction. 相似文献
3.
Novel Fe_3O_4@SiO_2@Ag@Ni trepang-like nanocomposites:High-efficiency and magnetic recyclable catalysts for organic dye degradation 下载免费PDF全文
A facile step-by-step approach is developed for synthesizing the high-efficiency and magnetic recyclable Fe_3O_4@SiO_2@Ag@Ni trepang-like nanocomposites.This method involves coating Fe_2O_3 nanorods with a uniform silica layer,reduction in 10%H_2/Ar atmosphere to transform the Fe_2O_3 into magnetic Fe_3O_4,and finally depositing Ag@Ni core-shell nanoparticles on the L-lysine modified surface of Fe_3O_4@SiO_2 nanorods.The fabricated nanocomposites are further characterized by x-ray diffraction,transmission electron microscopy,scanning electron microscope,Fourier transform infrared spectroscopy,and inductively coupled plasma mass spectroscopy.The Fe_3O_4@SiO_2@Ag@Ni trepang-like nanocomposites exhibit remarkably higher catalytic efficiency than monometallic Fe_3O_4@SiO_2@Ag nanocomposites toward the degradation of Rhodamine B(RhB) at room temperature,and maintain superior catalytic activity even after six cycles.In addition,these samples could be easily separated from the catalytic system by an external magnet and reused,which shows great potential applications in treating waste water. 相似文献
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Structural and physical properties of BiFeO3 thin films epitaxially grown on SrTiO3(001) and polar(111) surfaces 下载免费PDF全文
The influence of surface polarity on the structural properties of BiFeO3 (BFO) thin films is investigated. BFO thin films are epitaxially grown on SrTiO3 (STO) (100) and polar (111) surfaces by oxygen plasma-assisted molecular beam epitaxy. It is shown that the crystal structure, surface morphology, and defect states of BFO films grown on STO substrates with nonpolar (001) or polar (111) surfaces perform very differently. BFO/STO (001)is a fully strained tetragonal phase with orientation relationship (001)[100]BFOII(001)[100]STO, while BFO/STO (111) is a rhombohedral phase. BFO/STO (111) has rougher surface morphology and less defect states, which results in reduced leakage current and lower dielectric loss. Moreover, BFO films on both STO (001) and STO (111) are direct band oxides with similar band gaps of 2.65 eV and 2.67 eV, respectively. 相似文献
6.
对以本征Si及重掺杂p型和n型Si作为中间层的Fe/Si多层膜的层间耦合进行研究,并通过退火,增大Fe,Si之间的扩散,分析界面扩散对层间耦合的影响. 实验结果表明,层状结构良好的制备态的多层膜,Fe,Si之间也存在一定程度的扩散,它是影响层间耦合的 主要因素,远远超过了半导体意义上的重掺杂,使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现,在一定范围内增大Fe,Si之间的扩散,即使多层膜的层状结构已经有了相当的退化,Fe/Si多层膜的反铁磁耦合强度基本保持不变.
关键词:
Fe/Si多层膜
层间耦合
界面扩散 相似文献
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本文根据晶场理论计算了α-Fe_2O_3的单离子磁晶各向异性。采用点电荷模型,计及近邻及次近邻对晶场的贡献,并考虑到近邻O~(2-)离子对次近邻Fe~(3+)离子的电屏蔽效应,在六级微扰近似下,得到单离子各向异性场H_(si)=102.3×10~2Oe。这一结果结合Artman等人对磁偶极各向异性的计算,导出了α-Fe_2O_3的Morin转变温度T_M=261K,与实验很好地符合。对于低浓度掺杂的α-(Fe_(1-n)Al_n)_2O_3采用线性近似原理,得出了Morin转变温度随n的变化关系。这一结果不但解释了现有的实验事实,而且预示了Morin转变温度随n变化的规律。 相似文献