Ionic conductivity study on electron beam irradiated polyacrylonitrile-polyethylene oxide gel

Different mass percent polyacrylonitrile (PAN)-polyethylene oxide (PEO) gels were prepared and irradiated by an electron beam (EB) with energy of 1.0 MeV to the dose ranging from 13 kGy to 260 kGy.The gels were analysed by using Fourier transform infrared spectrum,gel fraction and ionic conductivity (IC) measurement.The results show that the gel is crosslinked by EB irradiation,the crosslinking degree rises with the increasing EB irradiation dose (ID) and the mass percents of both PAN and PEO contribute a lot to the crosslinking;in addition,EB irradiation can promote the IC of PAN-PEO gels.There exists an optimum irradiation dose,at which the IC can increase dramatically.The IC changes of the PAN-PEO gels along with ID are divided into three regions:IC rapidly increasing region,IC decreasing region and IC balanced region.The cause of the change can be ascribed to two aspects,gel capturing electron degree and crosslinking degree.By comparing the IC-ID curves of different mass percents of PAN and PEO in gel,we found that PAN plays a more important role for gel IC promotion than PEO,since addition of PAN in gel causes the IC-ID curve sharper,while addition of PEO in gel causes the curve milder.     

Structural modification of C60 films induced by 300-keY Xe-ion irradiation

The structural modification of C60 films induced by 300-keV Xe-ion irradiation was investigated. The irradiated C60 films were analysed using Fourier transform infrared spectroscopy, the Raman scattering technique, ultraviolet/visible spectrophotometry and atomic force microscopy. The analysis results indicate that the Xe-ion irradiation induces polymerization and damage of the C60 molecule and significantly modifies the surface morphology and the optical property of the C60 films. The damage cross-section for the C60 molecule was also evaluated.     

He离子辐照6H-SiC引入缺陷的光谱研究

实验采用300 keV的He²⁺辐照6H-SiC,辐照温度分别为室温,450,600和750 ℃,辐照剂量范围为1×10¹⁵–1×10¹⁷ cm^-2,辐照完成后对样品进行拉曼散射和紫外可见透射光谱测试与研究. 这两种分析方法的实验结果表明,He离子辐照产生的缺陷以及缺陷的恢复与辐照剂量和辐照温度有着直接关系. 室温下辐照会使晶体出现非晶化,体现在拉曼特征峰消失,相对拉曼强度达到饱和(同时出现了较强的Si-Si峰);高温下辐照伴随着晶体缺陷的恢复过程,当氦泡未存在时,高温辐照很容易导致Frenkel对、缺陷团簇等缺陷恢复,当氦泡存在时,氦泡会抑制缺陷恢复,体现在相对拉曼强度和相对吸收系数曲线斜率的变化趋势上. 本文重点讨论了高温辐照情况下氦泡对缺陷聚集与恢复的影响,并与高温下硅离子辐照碳化硅结果进行了对比. 关键词： 6H-SiC 氦泡 拉曼散射光谱 紫外可见透射光谱     

电子辐照改性PAN/PEO基体凝胶电解质对染料敏化太阳电池性能的提高

采用电子束（EB）对聚丙烯腈/聚氧化乙烯（PAN/PEO）凝胶电解质进行了剂量为13～260 kGy的辐照, 并对辐照改性的电解质组装的染料敏化太阳电池(DSSC)进行了性能测量。 结果表明, 改性后的DSSC的光电转化效率比改性前的高; 并且随EB辐照剂量的增加, DSSC效率先迅速增加(0～65 kGy), 然后缓慢减小(65～130 kGy)直至趋于一个平衡值(130～260 kGy)。 提升DSSC效率的最佳辐照剂量为65 kGy, 此时效率提高了约36%。 对比DSSC短路电流、 开路电压和填充因子随辐照剂量的变化, 发现DSSC效率的提高主要是由短路电流的提高引起的。 测量表明, 辐照改性后的DSSC时间稳定性得到了改善, 并且辐照剂量越高, 稳定性的改善越明显。 In this work, PAN/PEO (polyacrylonitrile/polyethylene oxide) based gel electrolyte was irradiated by electron beam (EB) with dose from 13 to 260 kGy. Then, DSSC (dye sensitized solar cell) was fabricated by the irradiated electrolyte and characterized. The results show that the efficiency of the DSSC fabricated by irradiated electrolyte is promoted comparing with DSSC fabricated by un irradiated electrolyte. And with irradiation dose increasing, the DSSC efficiency increases rapidly at first (0～65 kGy), then, drops down slowly (65～130 kGy), finally trends to a stable value (130～260 kGy). It indicates that there is an optimal irradiation dose, at which the promotion of DSSC efficiency is the highest, approximate 36%. Observed from the change of short circuit current, open circuit voltage and fill factor, short circuit current promotion by EB irradiation is found to be the main reason of DSSC performance promotion. The time stability measurement of the DSSC indicates that EB irradiation on PAN/PEO electrolyte reduces the loss of efficiency and the limiting effects become more apparent as the irradiation dose increases.     

基于HIRFL 的高温应力材料载能离子辐照实验装置

针对未来先进核能装置候选结构材料在高温和应力等条件下抗辐照性能的评价与快速筛选的需求,基于兰州重离子研究装置( HIRFL ) 可提供的离子束流条件,设计制作了国内第一套高温应力材料载能离子辐照装置。该装置由束流扫描及探测系统、高温系统、应力系统、真空冷却系统和远程控制系统等5 部分组成,可以同时提供高温和拉/ 压应力下材料的离子束均匀辐照件,温区覆盖了室温至1 200 °C范围,拉/ 压应力范围为0 ~1176 N,x-y 方向均匀扫描面积可大于40 mmx40 mm。利用该装置,已经成功进行了多次高温和应力条件下载能离子辐照先进核能装置候选材料的实验研究,并取得了初步成果。In order to expedite the evaluation of properties of irradiated materials and the selection of candidate materials for future nuclear energy systems, we developed a specific ion irradiation equipment installed on the Heavy Ion Research Facility of Lanzhou ( HIRFL ) for materials under high temperature and stress. This equipment consists of ion beam scanning and detector system, high temperature load system, stress load system, water cooling system as well as telecommunication and control system. It can supply a wide range of temperature (from room temperature to 1 200 °C ) and stress ( pull / push from 0 to 1 176 N) simultaneously for materials under ion irradiation. The x-y scanning area with high uniformity is larger than 40 mm40 mm. This is the first suit of ion irradiation equipment made in China that can be used to study co-operating effects of high temperature and stress in an irradiated material. It has been successfully used several times for materials irradiations under high temperatures and stress, which proved that the new equipment has very good performances in experiments.     

94MeV Xe离子辐照引起的薄膜硅光学带隙变化研究

室温下,用94MeV的Xe离子辐照纳米晶和非晶硅薄膜以及单晶硅样品,辐照量分别为1.0×1011,1.0×1012和1.0×1013ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪进行检测分析。通过对比研究了纳米晶、非晶、单晶硅样品的光学带隙随Xe离子辐照量的变化。结果表明,不同结构的硅材料中Xe离子辐照引起的光学带隙变化规律差异显著:随着Xe离子辐照量的增加,单晶硅的光学带隙基本不变,非晶硅薄膜的光学带隙由初始的约1.78eV逐渐减小到约1.54eV,而纳米晶硅薄膜的光学带隙则由初始的约1.50eV快速增大至约1.81eV,然后再减小至约1.67eV。对硅材料结构影响辐照效应的机理进行了初步探讨。     

He 离子注入引起的高纯钨硬化

完成了不同注量或温度下100 keV 的He 离子注入高纯钨的实验,并利用纳米压痕技术测量了材料的微观力学性能。所有注入样品的纳米硬度值都高于未注入样品的纳米硬度值。对于室温注入样品,随着注量的增加,样品抗弹性变形能力下降;当注量不高于5x1017 ions/cm2 时,钨的纳米硬度峰值随着注量的增加而增加;注量为1x1018 ions/cm2 的钨样品的纳米硬度峰值反而降低。高温注入样品的抗弹性变形能力优于室温注入样品的抗弹性变形能力;随着注入温度的增加,样品的平均纳米硬度值和弹性模量略有下降。分析讨论了He 注入钨硬化和抗弹性形变能力降低的可能原因。Tungsten has been selected as divertor materials in fusion reactors because of its high thermal conductivity,high melting point, low expansion coefficient and high threshold energy for sputtering etc. The paper presents the hardening behaviour of high pure tungsten by 100 keV He+ with different fluences from 5x1016 ions/cm2 to 1x1018ions/cm2 at room temperature, and with fluence of 1x1018 ions/cm2 at higher temperatures (400, 600 and 800 °C). The microscopic mechanical properties of these samples were investigated by nano-indentation technology. The results show that all of the implanted samples harden obviously. The reason for hardening may be that defects of interstitial dislocation loops or dense helium bubbles etc induced by helium implantation obstacle the movement of dislocation. The peak nanohardness of the samples increased with the fluences increasing when the fluence is not more than 5x1017 ions/cm2, while the nano-hardness value of the implanted sample with the fluence of 1x1018 ions/cm2 decreases and the nano-hardness changes little in the region of 50 nm to 200 nm from surface. For all the implanted samples with 1x1018 ions/cm2 at higher temperatures, their nano-hardness values are similar, but show a trend of decrease with increasing temperature.The reason may be the decrease of the defects’ density during implantation at higher temperatures. In addition, the capability of resisting deformation for the implanted tungsten reduces with increasing fluence and increases a little at higher temperatures.     

250 keV He+ 离子注入钽酸锂改性研究

室温下,将能量为250 keV He+ 离子注入z 切钽酸锂单晶,注量范围5.0x1014~5.0x1016 He+/cm2,应用三维轮廓仪、X射线衍射(XRD)、紫外可见(UV-Vis ) 光学吸收谱对未注入和注入样品进行了表征和分析。分析结果表明,在注量达到5.0x1016He+/cm2 时,样品表面出现大量凸起条纹,同时晶格沿着[001] 方向出现明显肿胀,吸收边则表现出明显的注量相关性。注入样品在空气中放置60 d后,最高注量的样品表面原来凸起的条纹变为细长的裂纹,晶格应变及光学吸收边均出现较大的恢复。讨论了样品表面形貌、晶格应变和光学吸收边与He 行为的关系。The effects of 250 keV He + implantation in the fluence from 5.0x1014 to 5.0x1016 He+/cm2 on lithium tantalate at room temperature were investigated by 3D surface profiler, XRD and UV-Vis optical absorption spectroscopies.The experimental results show that a large number of raised stripes appear on the surface of the sample and the significant lattice swelling occurs along the direction [ 001 ] at the fluence of 5.0x1016 He+/cm2. The dependence of changes absorption edge on the fluences was revealed. After the samples had been exposed to the air for 60 days, the raised stripes on the surface have evolved into narrow cracks. Furthermore, the lattice strain and the optical absorption edge has also recovered dramatically. The relationship between surface morphology, lattice strain, optical absorption edge and behaviorof He-ions was discussed.     

80keV N离子注入对ZnO薄膜结构的影响

室温下用80keVN离子注入ZnO薄膜样品,注量分别为5.01014,5.01015和5.01016ions/cm2,然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征。实验结果表明,由高度(002)择优取向的致密柱状晶构成的薄膜中,注入5.0×1015ions/cm2时,观测到缺陷生成和局域无序化现象,但薄膜总体结构仍保持柱状晶和(002)择优取向;随着注量的增大,晶格常数c和压应力呈增大趋势。对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论。     

Ionic conductivity study on electron beam irradiated polyacrylonitrileben polyethylene oxide gel

Different mass percent polyacrylonitrile (PAN)—polyethylene oxide (PEO) gels were prepared and irradiated by an electron beam (EB) with energy of 1.0 MeV to the dose ranging from 13 kGy to 260 kGy. The gels were analysed by using Fourier transform infrared spectrum, gel fraction and ionic conductivity (IC) measurement. The results show that the gel is crosslinked by EB irradiation, the crosslinking degree rises with the increasing EB irradiation dose (ID) and the mass percents of both PAN and PEO contribute a lot to the crosslinking; in addition, EB irradiation can promote the IC of PAN—PEO gels. There exists an optimum irradiation dose, at which the IC can increase dramatically. The IC changes of the PAN—PEO gels along with ID are divided into three regions: IC rapidly increasing region, IC decreasing region and IC balanced region. The cause of the change can be ascribed to two aspects, gel capturing electron degree and crosslinking degree. By comparing the IC—ID curves of different mass percents of PAN and PEO in gel, we found that PAN plays a more important role for gel IC promotion than PEO, since addition of PAN in gel causes the IC—ID curve sharper, while addition of PEO in gel causes the curve milder.