129I加速器质谱分析研究

通过对129I加速器质谱(AMS)分析中影响敏度和准确度各种参数的研究,如靶电极制备、压样、靶样中辅助介质（Matrix）的选择及使用比例等,优化了用于3 MV加速器质谱仪的SO-110型离子源的条件参数,确定129I-AMS测量的最佳靶电极材料为Cu,最佳的辅助介质为Nb粉末,Nb与AgI样品的最佳体积比为3∶1。在此条件下可以获得稳定且持续的I-束流进行测量129I/127I原子比值,实验测得西安加速器质谱仪的129I/127I本底值为1.5210-14。     

A preliminary study of small-mass radiocarbon sample measurement at Xi'an-AMS

To meet the measurement demands on small-mass radiocarbon(carbon content at 10^-6g level) which are becoming increasingly significant, Xi’an-AMS has made improvements to the existing method of sample loading and has upgraded the Cs sputter ion source from the original SO-110 model. In order to study the feasibility of small-mass samples in Xi’an-AMS and evaluate the radiocarbon sample preparation ability using existing routine systems of H₂/Fe and Zn/Fe, the small-mass samples prepared by four different methods are tested. They are the mass division method, mass dilution method, H₂/Fe reduction method and Zn/Fe reduction method. The results show that carbon mass above 25 μg can be prepared using the existing Zn/Fe system, but no less than 100 μg is required using the existing H₂/Fe system, which can be improved. This indicates Xi’an-AMS are now able to analyze small-mass radiocarbon samples.     

94MeV Xe离子辐照引起的薄膜硅光学带隙变化研究

室温下,用94MeV的Xe离子辐照纳米晶和非晶硅薄膜以及单晶硅样品,辐照量分别为1.0×1011,1.0×1012和1.0×1013ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪进行检测分析。通过对比研究了纳米晶、非晶、单晶硅样品的光学带隙随Xe离子辐照量的变化。结果表明,不同结构的硅材料中Xe离子辐照引起的光学带隙变化规律差异显著:随着Xe离子辐照量的增加,单晶硅的光学带隙基本不变,非晶硅薄膜的光学带隙由初始的约1.78eV逐渐减小到约1.54eV,而纳米晶硅薄膜的光学带隙则由初始的约1.50eV快速增大至约1.81eV,然后再减小至约1.67eV。对硅材料结构影响辐照效应的机理进行了初步探讨。     

低速高电荷态重离子在C_(60)薄膜中引起的势效应研究

为了研究低速高电荷态离子在C60薄膜中引起的势效应,用能量为200keV的高电荷态Xen+(n=3,10,13,15,17,20,22,23)离子辐照了C60薄膜。用原子力显微镜(AFM)和Raman散射技术分析了辐照过程中高电荷态Xen+离子所储存势能在C60薄膜中引起的效应,即势效应。AFM分析结果表明,辐照C60薄膜的表面粗糙度随辐照Xen+离子电荷态(即势能)的增加而减小,揭示了势效应的存在。而Raman分析结果表明,由于Xe离子的动能远大于其所储存的势能,因此,尽管有表面势效应的影响,但在Raman分析的深度范围内,弹性碰撞还是主导了C60薄膜的损伤过程。     

土壤样品中超痕量129I的无载体共沉淀分离及加速器质谱测定

环境样品中超微量129I的准确测定是天然129I地质定年和环境示踪应用的关键.本研究通过高温热解法分离土壤中的碘,并将其收集于碱性捕集液中,再利用AgI-AgCl共沉淀方法实现捕集液中碘的无载体分离:采用3 MV加速器质谱仪测量沉淀样品中129I/127I比值.通过优化分离和分析条件,高温热解过程中碘的分离效率达95%...     

Raman Spectroscopy of Irradiation Effect in Three Carbon Allotropes Induced by Low Energy B Ions

Irradiation effect in three carbon allotropes C60, diamond and highly oriented pyrolytic graphite （HOPG） induced by 170keV B ions, mainly including the process of the damage creation, is investigated by means of Raman spectroscopy technique. The differences on irradiation sensitivity and structural stability for C60, HOPG and diamond are compared. The analysis results indicate that C60 is the most sensitive for B ions irradiation, diamond is the second one and the structure of HOPG is cross sections σ of C60, diamond and HOPG deduced from 1.31 × 10^-15 cm^2, respectively. the most stable under B ion irradiation. The damage the Raman spectra are 7.78 × 10^-15, 6.38 × 10^-15 and1.31 x 10-15 cm^2, respectively.     

碳化硅中氦离子高温注入引入的缺陷及其退火行为的光谱研究

对氦（He）离子高温（600 K）注入6H-SiC中的辐照缺陷,在阶梯温度退火后演化行为的拉曼光谱和室温光致发光谱的特征进行了分析.这两种方法的实验结果表明,离子注入所产生晶格损伤的程度与注入剂量有关;高温退火导致损伤的恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复.在阶梯温度退火下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性.研究表明：高温（600 K）注入在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层 关键词： 6H-SiC 离子注入 拉曼光谱 光致发光谱