水射流冷却过程中表面热流密度的预测

建立了由内部一点测量温度值,选取多个时间步长计算未知的表面热流密度与换热系数的导热反问题算法。该算法采用有限容积法离散方程,附加源项法处理边界条件。将该计算模型应用于求解浸没水射流冷却过程中表面热流密度,将计算温度值与实验测温值进行比较验证了算法的正确性。在此基础上分析了水射流冲击过程中薄钢片表面热流密度随表面温度与时间的变化特性。     

Systematic studies on α-decay half-lives for super heavy nuclei

Radioactive decay of super heavy nuclei via the emission of α-particles has been studied theoretically in the preformed cluster model （PCM）. The nucleus-nucleus （NN） potential is obtained by double folding the density distributions of the α-particle and the daughter nucleus with a realistic effective interaction. The M3Y effective interaction, supplemented by a zero-range pseudo-potential for exchange term, is used to calculate the NN potential. The α decay half-lives for 317 nuclei at Z=102 120 are performed in the PCM framework with the theoretical Q values extracted from the MSller-Nix-Kratz and Liran-Marinov-Zeldes mass tables and are compared with the experimental data. The calculated results are also compared with those obtained by using Q values from the Muntian-Hofmann-Patyk-Sobiczewski and Myers-Swiatecki mass estimates.     

A revisit to the neutron skin thickness of neutron-rich nuclei in the statistical abrasion ablation model

The cross sections of the fragments produced in the projectile fragmentation reactions of the even calcium isotopes from A=36 to A=52 are calculated using the statistical abrasion ablation model.The neutron skin thickness are studied by investigating the fragments isotopic cross section distributions.The neutron-skin thicknesses of the calcium isotopes have a good linear correlation to the peak positions of their fragment isotopic cross section distributions.The correlation between the neutron skin thickness and the neutron density distributions of 48 Ca is investigated by introducing a parameter to adjust the diffuseness parameter in the fermi-type density distribution.     

Band Structures of Metal-Oxide Capped Graphene： A First Principles Study

We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to - 0.9 and - 1.8 eV, respectively. We find the gap originates from the breakage of π bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.     

Two Kinds of Cavity Geometry for Enhanced Laser Cooling of Solids

We present a comparison between intracavity cooling and external cavity cooling for optical refrigeration. The results show that the intracavity scheme is preferred at low optical densities （〈 0.008）, while the external cavity scheme is preferred at higher optical densities （〉 0.01）. We can choose the proper scheme for different eases in experiments. Moreover, under the same conditions, taking Yb^3＋-doped ZBLAN （ZrF4-BaF2-LaF3-AlFa-NaF） film as an example, the cooling processes of the two scheme are obtained. The calculated results show that intracavity cooling will achieve a larger temperature drop for a thin film sample. Finally, the diode laser may become a candidate for the intraeavity model briefly discussed.     

Terahertz Quantum Cascade Laser Operating at 2.94THz

The development of quantum cascade laser at 2.94 THz is reported. The laser structure is based on a bound-to-continuum active region and a semi-insulating surface-plasmon waveguide. Lasing is observed up to a heat-sink temperature of 70 K in pulsed mode with light power of 4.75 mW at 10 K and 1 mW at 70 K. A threshold current density of 296.5 A/cm2 and an internal quantum efficiency of 1.57 × 10-2 per cascade period are also observed at 10 K. The characteristic temperature of this laser is extracted to be T0 = 57.5 K.     

Laser Damage Mechanisms of Amorphous Ta2O5 Films at 1064, 532 and 355nm in One-on-One Regime

Ta2O5 films are deposited on fused silica substrates by conventional e-beam evaporation. Surface topography and chemical composition are examined by atomic force microscopy （AFM） and x-ray photoelectron spectroscopy （XPS）. The calculation of electron structures of Ta2O5 and Ta2O5-x is attempted using a first-principle pseudopotential method within the local density approximation. The laser-induced damage threshold （LIDT） is performed at 1064, 532 and 355 nm in 1-on-1 regime, respectively. The results show that the LIDT increases with the wavelength increasing, which is in agreement with the wavelength effect. However, the LIDT results are not consistent with the empirical equation （I（λ）=aλm）, which may be attributed to the intrinsic absorption of Ta2O5 at the wavelengths of 532 or/and 355 nm. Moreover, different damage morphologies are observed when the films are irradiated at different wavelengths. It is concluded that the laser damage at 1064 nm is the defect dominant mechanism and at 355 nm it is the intrinsic absorption dominant mechanism, whereas at 532 nm it is the combined defect and intrinsic absorption dominant mechanism.     

Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions

Flexible vanadyl-phthalocyanine （VOPc） thin-film transistors are fabricated by the weak epitaxy growth （WEG） method. The devices show a mobility of 0.5 cm2/Vs, an on/off ratio of 105 and a low leakage current of 10-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.     

外电场作用下FO分子的特性研究

采用密度泛函的B3P86方法,以6-311+G(3df)为基函数优化得到不同外电场下FO基态分子的稳定几何结构、键长、总能量、HOMO能级、LUMO能级、费米能级、能隙、红外光谱和谐振频率.结果表明,分子结构与外电场有着强烈的依赖关系,且对电场方向的依赖呈现出不对称性;随着正向电场的增大,HOMO能级、LUMO能级和费米能级是减小的,能隙是先增大后减小;红外光谱和谐振频率是增大的,而频率间隔是不断减小的.     

He,Ne,Ar,Kr和Xe原子电子的动量密度分布研究

对He,Ne,Ar,Kr和Xe原子体系中电子在动量空间的性质进行了系统的理论计算研究.采用自洽场HFR方法计算了坐标空间He,Ne,Kr和Xe原子体系单电子径向波函数,动量空间的单电子波函数由坐标空间原子体系单电子径向波函数通过运用傅立叶变换计算得到.在冲量近似条件下,进一步计算研究了这些原子的单电子动量密度分布和原子体系总的Compton轮廓.计算结果与已有的实验实验值和其他文献的理论计算结果比较表明,本文计算的结果是准确的.