The residual C concentration control for low temperature growth p-type GaN

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied.Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:(i) the C concentration decreases with the increase of growth pressure;(ii) we have found there exists a Ga memory effect when changing the Cp_2 Mg flow which will lead the growth rate and C concentration increase along the increase of Cp_2 Mg flow;(iii) annealing outside of metal–organic chemical vapor deposition(MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.     

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Physical implications of the activation energy derived from temperature dependent photoluminescence(PL) of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.     

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films(N_(Si)= 1.0 × 10~(18)–1.0 × 10_(19)cm~(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition(MOCVD) under low pressure on the ntype(001)6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy(UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy(XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.     

方案有类别偏好的多粒度语言灰靶决策方法

研究了方案有类别偏好的不同粒度语言信息决策方法。基于不同粒度语言的距离转换函数方法,将其转换成标准语言距离;针对不完全的属性权重信息,通过灰靶决策的原理表征方案的综合靶心距;基于案例学习的思想,建立了考虑方案有多种类别偏好的属性权重确定模型。算例表明了方法有效性。     

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

Room-temperature operation of cw GaN based multi-quantum-well laser diodes （LDs） is demonstrated. The LD structure is grown on a sapphire （0001） substrate by metalorganic chemical vapour deposition. A 2.5μm × 800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern （FFP） are 12° and 32°, respectively.     

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_(1-x )N/GaN multiple-quantumwell(MQW) laser diode(LD), the Al composition of inserted p-type AlxGa_(1-x)N electron blocking layer(EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In_(0.04)Ga_(0.96)N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al_xGa_(1-x)N hole blocking layer(HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al_xGa_(1-x)N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al_xGa_(1-x)N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.     

基于分数阶傅里叶变换混响抑制的目标回波检测方法

提出了一种声呐发射信号为线性调频信号时,基于分数阶傅里叶变换混响抑制的目标回波信号检测方法。通过计算混响的缓慢时变包络,对混响进行时间域的平稳化处理。对平稳化的混响信号滑动窗截取,对截取信号进行分数阶傅里叶变换,然后在分数阶傅里叶域进行滤波处理,再进行逆分数阶傅里叶变换恢复出时间域信号,最后输出该信号的能量。当滑动窗截取到目标回波信号时,窗内的混响噪声得到抑制,系统输出目标回波的能量,从而实现混响背景下的信号检测。通过计算机仿真和湖试实验结果,表明所提方法可以准确的在混响背景下检测到目标回波信号,并且在混响噪声背景条件下相比于匹配滤波器具有更好的检测性能。      

The effect of single A1GaN interlayer on the structural properties of GaN epilayers grown on Si （111） substrates

High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.     

FORMATION AND MAGNETIC PROPERTIES OF A NOVEL Gd3(Fe,Ti)29Ny NITRIDE

The novel Gd₃(Fe_0.978Ti_0.022)₂₉ compounds and their nitride have been synthesized. The X-ray diffraction patterns of the Gd₃(Fe,Ti)₂₉N_y and its parent compounds were indexed in the Nd₃(Fe,Ti)₂₉-type structure with a monoclinic symmetry and space group P2₁/c, Both the nitride and the parent compounds exhibit ferrimagnetlc coupling. Nitrogenatio led to an increase in Curie temperature and saturation magnetization. The Curie temperatures are 517K for the parent and 765K for the nitride. The saturation magnetizations σ_s at 4.2K are 101.9A·m²/kg for the parent and 128A·m²/kg for the nitride. Both the nitride and parent exhibit a planar anisotropy. Nitrogenation led to a decrease of the contribution of Fe-sublattice to planar anisotropy. The anisotropy fields at 4.2K are 9.8T for the parent and 6.5 T for the nitride.     

例谈高效求解高中数学不等式

不等式是重要的解题工具也是高考的重点、难点和热点,高考中学生在解决不等式问题的时候,不仅要保证解题的正确性,同时也要关注时间的长短,也就是说解题的效率往往是高三学生在高考中特别要注意的问题,同样也是我们高三一线教师要思考以及帮助学生解决的问题.笔者就通过几个例子展示一下