Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响

采用金属有机化合物化学气相沉积（MOCVD）方法制备了不同Al组分（x=0.19,0.22,0.25,0.32）的Al_xGa_1-xN/AlN/GaN 结构的高电子迁移率晶体管（HEMT）材料。研究了Al_xGa_1-xN势垒层中Al组分对HEMT材料电学性质和结构性质的影响。研究结果表明,在一定的Al组分范围内,二维电子气（2DEG）浓度和迁移率随着Al组分的升高而增大。然而,过高的Al组分导致HEMT材料表面粗糙度增大,2DEG迁移率降低,该实验现象在另一方面得到了原子力显微镜测试结果的验证。在最佳Al组分（25%）范围内,获得的 HEMT材料的2DEG浓度和室温迁移率分别达到1.2×10¹³ cm^-2和1 680 cm²/（V·s）,方块电阻低至310 Ω/□。     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.     

基于非线性力反馈的血管介入手术训练系统

血管介入手术训练系统是利用虚拟现实技术帮助医生学员快速、高效、低成本地掌握血管介入手术技能的训练系统。由于国外商业产品存在较高技术壁垒且我国对本课题的研究起步较晚,导致系统存在血管形变仿真缺失、力反馈计算方法简单等诸多不足。针对这些问题研发了一套血管介入手术虚拟训练系统,实现了系统的血管与导丝柔性形变、血管碰撞检测、力反馈计算与导丝运动控制等功能。分别基于张量有限元和杆单元有限元构建了血管和导丝的物理模拟模型;研究了血管与导丝模型的碰撞检测方法;通过导丝前端碰撞模型与血管壁碰撞模型间的接触面积构造非线性力学方程,提出了非线性力反馈计算方法。实验结果表明,系统中血管张量有限元物理模型具有良好的柔性形变效果,为系统提供了较好的视觉反馈信息;非线性力反馈计算方法更好的模拟了导丝与血管间作用力的特性;系统实现了手术训练功能,并具有良好的实时性。     

利用多角度海底反向散射信号进行地声参数估计

针对现有海底地声参数估计方法的不足,提出了利用相控参量阵浅地层剖面仪接收的多角度海底反向散射信号进行地声参数估计的方法,首先利用正下方和斜入射方向上沉积层上、下表面的差频反向散射信号进行沉积层厚度和声速估计,然后利用正下方沉积层上、下表面两个不同频率的差频信号的反向散射信号估计沉积层衰减系数,最后利用正下方沉积层上表面原频反向散射信号估计沉积层阻抗,计算沉积层密度从而解决和声速的耦合性,通过水池试验验证了该方法的有效性。     

基于Vague集多准则决策的新的评分函数

评分函数是Vague集多准则决策过程中影响决策结果的一个重要因素.针对模糊环境下多准则决策问题,首先,指出现有文献所构造的评分函数的缺陷.其次,在整合前人工作的基础上,为同时兼顾真、假隶属度的绝对差距和未知度对决策结果的贡献,提出了一种新的评分函数,有效地解决了决策结果与直觉判断不符的问题,并在多方案的评分函数值相等时,给出了合理的决策规则,为决策者做出科学决策提供了一种方便有效的方法.最后,通过实例阐明新评分函数的有效性和优越性.     

热电器件综合性能表征系统及实验研究

基于直流瞬态Harman法测量热电器件优值系数原理,搭建热电器件综合性能表征实验系统,实现同时测量热电器件无量纲优值系数（ZT值）、Seebeck系数、电导率以及热导率,并通过Labview编程完成对实验系统的控制、数据采集、实时显示和处理。制作并改进具有夹层结构的热电器件,对此开展了性能测试评估。实验结果表明,室温下夹层结构热电器件ZT值小于常规Bi₂Te₃器件,但Seebeck系数比常规器件大;夹层结构器件电导率和热导率均大于常规器件值。     

Ergodic stationary distribution of a stochastic rumor propagation model with general incidence function

In daily lives, when emergencies occur, rumors will spread widely on the internet. However, it is quite difficult for the netizens to distinguish the truth of the information. The main reasons are the uncertainty of netizens' behavior and attitude, which make the transmission rates of these information among social network groups be not fixed. In this paper, we propose a stochastic rumor propagation model with general incidence function. The model can be described by a stochastic differential equation. Applying the Khasminskii method via a suitable construction of Lyapunov function, we first prove the existence of a unique solution for the stochastic model with probability one. Then we show the existence of a unique ergodic stationary distribution of the rumor model, which exhibits the ergodicity. We also provide some numerical simulations to support our theoretical results. The numerical results give us some possible methods to control rumor propagation. Firstly, increasing noise intensity can effectively reduce rumor propagation when $\widehat{\mathcal{R}}$₀>1. That is, after rumors spread widely on social network platforms, government intervention and authoritative media coverage will interfere with netizens' opinions, thus reducing the degree of rumor propagation. Secondly, speed up the rumor refutation, intensify efforts to refute rumors, and improve the scientific quality of netizen (i.e., increase the value of β and decrease the value of α and γ), which can effectively curb the rumor propagation.     

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Four blue-violet light emitting InGaN/GaN multiple quantum well(MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.