横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica

Two methods：high-power,short-time,single-shot irradiation（Method A） and low-power,long-time,multi-shot irradiation（Method B） are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds（LIDTs） of the mitigated sites are tested with a 355-nm,6.4-ns Nd：YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd：YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results.     

热裂解-气相色谱-质谱联用技术研究多羟基吡嗪的热裂解行为

采用热裂解-气相色谱-质谱联用技术（Py—GC-MS）,选择不同温度,在空气存在的条件下对烟叶重要组分多羟基吡嗪进行了热裂解挥发性成分分析,结果表明：该方法具有较好的重复性（相对标准偏差〈1．1％）;不同温度下挥发性的热裂解产物不同;该化合物的热裂解能够产生吡嗪类化合物,而且,随着热裂解温度的升高吡嗪类化合物的含量增加。在挥发性的热裂解产物中,在300℃时吡嗪类化合物只占8．35％,吡啶类化合物占19．07％;在600℃时吡嗪类化合物占16．96％,吡啶类化合物占30．58％;在900℃时吡嗪类化合物占21．61％,吡啶类化合物占27．08％。     

连通的欧拉生成子图

本文证明了:若 G 是一个 p 个顶点的、2-边-连通简单图,其边数,q≥((p-4)/2)+7.则除 K_(2,5)外,G 有连通的欧拉生成子图.当 q=((p-4)/4)+6和 k(G)=2时,本文给出了全部6个极图.     

脉动流方柱绕流特性研究

本文数值模拟雷诺数Re=100的条件下,脉动流振幅和频率分别为0.2≤A≤0.8和0≤f_P≤20 Hz时方柱绕流特性.通过数值计算得到方柱绕流的升、阻力系数,涡脱频率及尾涡特性,且稳定流下计算结果与文献结果一致。研究结果表明脉动流是一种有效的主动流动控制方法;在脉动流频率f_P为1.2~2.6自然涡脱频率f_(sn)时,旋涡脱落频率存在"锁定"现象;在锁定范围内,尾涡形成区域变短,时均阻力系数显著增大,且在脉动流频率等于两倍频率时,时均阻力系数达到峰值;随着振幅的增大,频率"锁定"范围增大。     

低温油封冷却器折流板开孔性能机理研究

针对管壳式换热器折流板背部存在流动死区的问题,以低温油封冷却器为研究对象,采用计算流体动力学技术对低温油封冷却器折流板开孔后的整体性能进行机理研究.研究结果表明:折流板背部存在大量的旋涡是导致流动死区的直接原因,折流板开孔后能够形成垂直于折流板的射流,对流动死区有明显改善作用。折流板开孔后,壳程压降有较大的降幅,同时传热系数也有降低,但降低幅度远远小于降低幅度。在等换热面积和等压降情况下,折流板开孔冷却器传热系数可以提高10%.     

CO_2激光光栅式扫描修复熔石英表面缺陷的实验研究与数值模拟

基于熔石英材料对波长为10.6μm的CO2激光具有强吸收作用这一特点,提出采用CO2激光光栅式多次扫描修复熔石英光学元件表面密集分布的划痕和抛光点等缺陷的方法.实验结果表明,在合理的扫描参数下,元件表面的划痕和抛光点等缺陷可被充分地消除.损伤阈值测试结果表明,表面划痕和抛光点等缺陷被完全消除的元件的损伤阈值可回复到或超过基底的损伤阈值.同时结合有限元软件Ansys的模拟结果分析了CO2激光扫描修复及消除元件表面划痕和抛光点等缺陷的过程.本文为消除元件表面划痕和抛光点等缺陷提供了非常有意义的参考.     

Z箍缩Al等离子体X辐射谱线的分离及电子温度的提取

以"强光一号"Z箍缩装置10174发次光谱诊断实验结果为例,描述了一种对Z箍缩等离子体X辐射光谱分离提纯、诊断的方法.对连续辐射谱和特征辐射线谱进行分离,并从连续辐射谱和特征辐射线谱中提取了等离子体电子温度信息.结果显示:等离子体连续谱主要由等离子体中心的高温区(Te=290.7 eV±1.2 eV)和温度较低的壳层区域(Te=95.3 eV±8.3 eV)两部分叠加而成;特征辐射线谱主要反映了等离子体中心的高温区信息,根据非局域热动平衡模型计算提取的电子温度约为299—313 eV,与连续谱诊断结果基本符合.     

非线性热传导方程MLPG/RBF-FD无网格数值模拟

结合无网格局部彼得洛夫-伽辽金(MLPG)方法和径向基函数有限差分(RBF-FD)无网格方法求解非线性热传导问题。MLPG方法属于弱式无网格方法,具有处理边界条件方便的优点,然而因其要做大量的插值、积分运算而计算效率偏低;RBF-FD无网格方法属于强式无网格方法,直接对微分算子进行数值离散,计算效率高,然而其边界条件的处理较复杂。将二者相结合,在求解域边界附近采用MLPG方法,其它区域采用RBF-FD无网格方法,则能扬长避短。介绍了MLPG方法和RBF-FD无网格方法的基本原理,将该混合方法用来求解非线性热传导方程,数值算例显示了方法的正确性和高效性。     

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_0.5Ga_0.5As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_0.5Ga_0.5As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states, we propose an effective strategy that Al_As, Ga_As, and Al_Ga antisite defects are introduced to improve the hole or electron mobility of GaAs/Al_0.5Ga_0.5As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.