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文章介绍了用示波器和信号发器搭配成的检测低通滤波器插入损耗的组合系统。列举了该系统对典型低通滤波器插入损耗的检测结果。 相似文献
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De-excitation Energy of Superdeformed Secondary Minima of Odd-Odd Au Isotopes and Its Sensitivity to the Density Dependence of Symmetry Energy 下载免费PDF全文
The de-excitation energy of superdeformed secondary minima of odd-odd Au isotopes is investigated using the relativistic mean field model with the inclusion of the isoscalar-isovector coupling. It is shown that the de-excitation energies of superdeformed secondary minima relative to the ground states can serve as a significant probe to the density dependence of the symmetry energy. 相似文献
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Gallium Nitride (GaN) room temperature α particle detectors are fabricated and characterized, whose device structure is Schottky diode. The current-voltage (I- V) measurements reveal that the reverse breakdown voltage of the detectors is more than 200 V owing to the consummate fabrication processes, and that the Schottky barrier and ideal factor of the detectors are 0.64 eV and 1.02, respectively, calculated from the thermionic transmission model. ^241Am α particles pulse height spectra from the GaN detectors biased at -8 V is obviously one Gauss peak located at channel 44 with the full width at half maximum (FWHM) of 15.87 in channel. One of the main reasons for the relatively wider FWHM is that the air between the detectors and isotope could widen the spectrum. 相似文献
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This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleads are attached by focused-ion beam deposition. The current-voltage (I - V) characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the I - V curves and oscillation peaks in the differential conductance (dI/dV - V) curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6-10 nm. 相似文献
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Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method 下载免费PDF全文
A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained. 相似文献
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