超分辨近场结构技术及其应用

超分辨近场结构(Super RENS)技术是在传统的超分辨光盘技术和近场光学的基础上发展起来的新技术。介绍了Super RENS技术的基本原理:利用掩膜层的非线性效应或表面等离子体增强效应,在近场区域可以记录、读出超过衍射极限的信号。综述了该技术在纳米光信息存储和光刻方面应用研究的最新进展,提出了存在的问题,展望了它的发展前景。     

GeSbTe 与 AgInSbTe 体系相变光盘的研究进展

自Ovshinsky把相变材料用于光存储以来 ,一大批具有可逆光存储性能的材料不断出现 ,其中研究较多的是GeSbTe和AgInSbTe两种体系 .文章着重介绍了利用这两种材料制成的相变光盘记录介质的微观结构特点 ,阐述了其晶化机理 ;同时 ,较详细地概述了光盘的堆栈结构及掺杂其他元素对相变光盘性能的影响 ,并对比说明了GeSbTe和AgInSbTe两种体系在蓝光记录方面的各自特点     

一个数论函数的均值

研究了三进制中数字和函数的均值性质，给出了一般情况下均值A1(N)，A2(N)，A3(N)的求和公式．     

High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.     

聚合物整体柱在线固相萃取/高效液相色谱法测定水果中敌灭灵与伏虫灵

构筑了以甲基丙烯酸异辛酯(EHMA)为单体,乙二醇二甲基丙烯酸酯(EDMA)为交联剂的聚合物整体柱(10 mm×4.6 mm,i.d.)作为在线固相萃取吸附剂,结合高效液相色谱紫外检测器,建立了水果中苯甲酰类农药敌灭灵和伏虫灵的分析方法。构筑的聚合物整体柱结构多孔,比表面积为164.01 m~2·g~(-1),将其作为在线固相萃取净化柱,样品在0.1 m L·min~(-1)流速下经5 mmol·L~(-1)乙酸铵溶液上样,1.0 m L·min~(-1)条件下以乙腈-水(65∶35,体积比)洗脱后,进入C_(18)柱分析。该方法在0.1~50.0 mg·L~(-1)范围内线性关系良好(r≥0.998),对敌灭灵和伏虫灵的检出限分别为0.007 2、0.009 mg·kg~(-1),定量下限分别为0.024、0.030mg·kg~(-1)。在0.03、0.3、1.5 mg·kg~(-1)3个加标水平下的回收率为89.5%~102%,日内和日间相对标准偏差不大于6.8%。     

Optical Recording Properties of Metal-Azo Dye as Recording Medium with Super-Resolution Near-Field Structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure （Super-RENS） of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270℃ and the mass loss is about 48% in a narrow temperature region （15℃）. The complex refractive index N （N = n ＋ iκ） is measured. High refractive index （n = 2.45） and low extinction coefficient （κ = 0.2） at the recording wavelength 65Ohm are attained. Static optical recording tests with and without Super-RENS are carried out using a 65Ohm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.     

亚酞菁:一种新的信息光子学材料

亚酞菁是一种可望在信息光子学技术中获得重要应用的新型染料,其优良的非红性光学性质源于它特有非中心对称三维近平面锥形结构以及较大的共轭体和丰富的π电子,此外,基于它的短波长光学特性,这类材料也可能在高密度光存储中得到应用,文章综述了亚酞菁的一般结构和性能及其在非红性光学和光存储等方面的应用。     

Static recording characteristics of new type super-resolution near-field structure

A novel super-resolution near-field optical structure (super-RENS) with bismuth (Bi) mask layer is proposed in this paper. Static optical recording tests with and without super-RENS are carried out using a 650-nm semiconductor laser at recording powers of 14 and 7 mW with pulse duration of 100 ns. The recording marks are observed by high-resolution optical microscopy with a charge-coupled device (CCD) camera. The results show that the Bi mask layer can also concentrate energy into the center of a laser beam at low laser power similar to the traditional Sb mask layer. The results above are further confirmed by another Ar~+ laser system. The third-order nonlinear response induced by the plasma oscillation at the Bi/SiN interface during laser irradiation can be used to explain the phenomenon. The calculation results are basically consistent with our experimental results.     

香豆素343敏化TiO2纳米粒子光致电子转移的荧光和拉曼光谱

通过对香豆素343(C343)染料敏化TiO₂纳米粒子光致电子转移的荧光和拉曼光谱特性的研究表明,C343染料敏化TiO₂纳米粒子稳态吸收光谱和稳态荧光光谱的红移归因于从被吸附的C343染料分子激发态和C343/TiO₂复合物到TiO₂纳米粒子导带的光致电子转移. 由时间分辨荧光光谱确定了C343染料敏化TiO₂纳米粒子的逆向电子转移速率常数为τ₁=31 ps. C343 染料敏化TiO₂纳米粒子体系拉曼光谱的研究表明, 被吸附在界面处的染料分子主链碳键的伸缩振动和碳环的呼吸运动的振动模式对超快界面光致电子转移有着重要的促进作用.     

离子液体[BMIM]BF_4的微波合成及其在萃取头孢氨苄中的应用

本文在微波辐射条件下快速合成了亲水型离子液体1-丁基-3-甲基咪唑四氟硼酸盐[BMIM]BF4。在不到30min的反应时间内,[BMIM]BF4产率可达92%以上。同时,我们还探讨了[BMIM]BF4与MgSO4溶液形成的双水相体系对萃取头孢氨苄的影响。结果表明在[BMIM]BF4为6.85ml,MgSO4含量为3.53g时,所形成的双水相体系对头孢氨苄的萃取率可达97%以上。