| Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si(111) substrate with AlGaN interlayer |
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| 作者姓名： | 吴玉新 朱建军 陈贵锋 张书明 江德生 刘宗顺 赵德刚 王辉 王玉田 杨辉 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China;State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China;Institute of Information Function Materials, Hebei University of
Technology, Tianjin 300130, China;State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China;State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China;State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China;State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China;State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China;State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant Nos.~60506001, 60476021,
60576003, 60776047 and 60836003), the National Basic Research
Program of China (Grant No.~2007CB936700), and the Project of
Technological Research and Development of Hebei Province, China
(Grant No.~07215134). |
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| 摘 要： | We present the growth of GaN epilayer on Si(111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition.The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy,atomic force microscopy,optical microscopy and high-resolution x-ray diffraction.It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer,which can introduce a more compressive strain into the subsequent grown GaN layer,and reduce the crack density and threading dislocation density in GaN film.
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| 关 键 词： | GaN Si(111) substrate metalorganic chemical vapour deposition AlN buffer layer AlGaN interlayer |
| 收稿时间： | 2009-04-22 |
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer |
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| Wu Yu-Xin,Zhu Jian-Jun,Chen Gui-Feng,Zhang Shu-Ming,Jiang De-Sheng,Liu Zong-Shun,Zhao De-Gang,Wang Hui,Wang Yu-Tian and Yang Hui.Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si(111) substrate with AlGaN interlayer[J].Chinese Physics B,2010,19(3):36801-036801. |
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| Authors: | Wu Yu-Xin Zhu Jian-Jun Chen Gui-Feng Zhang Shu-Ming Jiang De-Sheng Liu Zong-Shun Zhao De-Gang Wang Hui Wang Yu-Tian and Yang Hui |
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| Affiliation: | Institute of Information Function Materials, Hebei University of
Technology, Tianjin 300130, China; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China; State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors,
Chinese Academy of Sciences, Beijing 100083,
China |
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| Abstract: | We present the growth of GaN epilayer on Si (111)
substrate with a single AlGaN interlayer sandwiched between the GaN
epilayer and AlN buffer layer by using the metalorganic chemical
vapour deposition. The influence of the AlN buffer layer thickness
on structural properties of the GaN epilayer has been investigated
by scanning electron microscopy, atomic force microscopy, optical
microscopy and high-resolution x-ray diffraction. It is found that
an AlN buffer layer with the appropriate thickness plays an important
role in increasing compressive strain and improving crystal quality
during the growth of AlGaN interlayer, which can introduce a more
compressive strain into the subsequent grown GaN layer, and
reduce the crack density and threading dislocation density in GaN
film. |
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| Keywords: | GaN Si (111) substrate metalorganic chemical vapour deposition AlN buffer layer AlGaN interlayer |
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