A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2

Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH₃CSNH₂. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing.     

Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn1-zCoxO(x=0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn1-xCoxO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn1-xCoxO稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn1-xCoxO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn1-xCoxO产生室温铁磁性的主要原因.     

SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善

用脉冲激光沉积(PLD)技术制备了ZnO/SiC/Si和 ZnO/Si薄膜并制成了紫外探测器。利用X射线衍射(XRD),光致发光(PL)谱,I-V曲线和光电响应谱对薄膜的结构和光电性能进行了研究。实验结果表明:SiC缓冲层改善了ZnO薄膜的结晶质量和光电性能,其原因可能是SiC作为柔性衬底能够减少ZnO与Si 之间大的晶格失配和热失配导致的界面缺陷和界面态。     

Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.     

A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2

Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH₃CSNH₂. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing.     

角分辨光电子能谱技术及其应用进展

角分辨光电子能谱 (ARPES)是研究晶体表面电子结构 ,如能带 ,费米面 ,以及多体相互作用的重要工具。本文概述了光电子激发的一般过程和单粒子近似下的理论模型。详细讨论了角分辨光电子能谱的能带勾画 (EnergyBandMapping)和费米面成像 (FermiSurfaceMapping)技术 ,以及高分辨下的角分辨光电子能谱在强相关体系研究中的应用。文章最后简单介绍了当前角分辨光电子能谱研究的新进展 ,如研究宽禁带半导体材料的表面电子结构 ,有机功能材料与金属的界面 ,金属超薄膜中的量子阱态 ,以及高温超导机理研究等     

光电子衍射与表面结构分析

光电子衍射是近年来发展成熟的研究外延表面和吸附表面的原子位型、结构、化学键、磁性等物理化学性质的表面分析方法。本文概述了其基本原理以及在理论、实践两方面的最新进展。并且具体阐述了在不同的实验条件下光电子衍射基本的数据处理方法 ,并结合一些近几年发展起来的技术如光电子全息、自旋分辨的光电子衍射 (SPPD)、磁二向色性角分布 (MDAD)等讨论了光电子衍射在各种低维体系中的应用     

Influence of the photon beam position on incident SR intensity at the SXMCD endstation

A small fluctuation of the photon beam position will affect the intensity and polarization characteristics of synchrotron radiation （SR） when it enters an endstation through the related beamline. In this paper, by changing the electron orbit equilibrium position in the vertical direction, we have measured the corresponding changes in the absorption strength of the SR with a gold mesh in different chopper aperture positions. It is found that for three aperture positions, the absorption intensity of the gold mesh shows a good Gaussian distribution as the photon beam position moves, while the ratio of the SR intensity passing through the upper and lower apertures shows a monotonous variation. This suggests a new method for estimating the circular polarization degree of SR originating from the bending magnet based on our current measurement.     

CH3CSNH2钝化对铁磁金属与GaAs界面扩散的影响

通过实验对比,研究了CH₃CSNH₂钝化对铁磁金属与GaAs界面处As扩散行为的影响.发现S钝化处理改变了表面As元素的化学环境,减弱了As元素向铁磁金属外延层中的扩散现象,削弱了As与铁磁金属的反应,形成了较窄的反应层,并且改善了界面磁性.初步探讨了S钝化影响As扩散的原因. 关键词： S钝化 半导体界面 电子结构 磁性     

Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn_1-xCo_xO (x＝0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn₁-xCo_xO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn_1-xCo_xO 稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn_1-xCo_xO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn_1-xCo_xO产生室温铁磁性的主要原因. 关键词： 1-xCo_xO稀磁半导体')" href="#">Zn_1-xCo_xO稀磁半导体 X射线吸收精细结构谱 脉冲激光气相沉积法