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A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2 下载免费PDF全文
Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH3CSNH2. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing. 相似文献
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通过在GaAs(100)表面生长具有弱有序的bcc相Co超薄膜,利用同步辐射光电发射和XPS,研究了室温下不同氧暴露量时Co膜的氧吸附行为。价带谱和Co3p发射谱结果表明,当暴露氧量低于4L时,氧解离吸附;更高的氧暴露量导致表面CoO相的成核与生成。 相似文献
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利用同步辐射光电发射和铁磁共振(FMR)研究了Co/GaAs(100)界面形成以及Co超薄膜的磁性质.结果表明,在低覆盖度(约为0.2nm)下,Co吸附原子与衬底发生强烈的界面反应,在覆盖度为0.9nm时,形成稳定的界面.从衬底扩散出的Ga原子与Co覆盖层合金化,而部分As原子与Co原子发生反应,形成稳定的键合,这些反应产物都停留在界面处很窄的区域(0.3—0.4nm)内.另一部分As原子偏析在Co覆盖层表面.结合理论模型,详细地讨论了界面结构及Ga,As原子的深度分布.FMR结果表明,生长的Co超薄膜具
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