Thermal analysis of GaN-based laser diode mini-array

Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.     

松木-聚氯乙烯复合材料催化热解特性的研究

通过热重法研究了松木与聚氯乙烯复合材料的催化热解特性,结果表明聚氯乙烯脱氯阶段与松木的纤维素、半纤维素热分解阶段温度区间重合,二者共热解时存在协同效应,并且HCl的释放对纤维素的脱水反应能够产生催化作用,HCl释放也对木质素的热分解及碳化反应有着明显的催化作用,导致二者共热解制备的碳化物产率提高,约为29.61%。并且利用元素分析仪、扫描电镜和能谱仪对成碳材料进行表征分析,结果表明成碳材料表面粗糙呈现多孔结构,其碳元素含量较高达到74.67%。     

CS-800红外碳硫分析仪测定合金钢中的碳和硫

研究了碳硫分析在不同钨助熔剂加入量及不同分析时间的条件下所得碳、硫元素含量,首次结合分析曲线验证最佳条件,并对碳、硫分析可能存在的误差进行浅析.     

酸洗脱矿对胜利褐煤热解过程中N迁移转化的影响

在石英管流化床反应器中对胜利褐煤进行快速热解实验,考察了773~1 173 K下酸洗脱矿对胜利褐煤热解过程中N迁移转化规律的影响。通过比较原煤和酸洗后煤中N的不同逸出规律可以得出,影响酸洗前后胜利褐煤热解过程中N迁移转化规律的主要是碱金属Na及碱土金属Ca;热解过程中,煤中的Na和Ca促使煤中的N向NH3转化并有效抑制了HCN的生成,金属离子的存在对催化焦油N转化为NH3的作用较为明显;原煤中的碱金属和碱土金属的赋存使半焦裂解反应加剧,降低了固体半焦的产率,半焦N的产率也随之减少;与原煤相比,酸洗煤热解半焦中的吡啶型N(N-6)含量较多,而吡咯型N(N-5)和季N(N-Q)相对较少。     

101600例0～17岁人群末梢血铜元素参考值的研究

为确定全国0～17岁不同年龄组人群末梢血铜元素含量正常参考值范围,采用火焰原子吸收光谱法检测了来自全国8个省区的101 600名0～17岁健康个体末梢血中铜元素的含量,用百分位数法确定其参考值范围.结果表明,取第5 、第97百分位数值分别作为参考值下限和上限,参考值范围依次为:0岁:8.51～25.63 μmol/L,...     

化学需氧量测定仪检定过程中常见问题与解决方法探讨

化学需氧量（Chemical Oxygen Demand,COD）是水体中易被氧化剂氧化的物质（如有机物、亚硝酸盐、亚铁盐、硫化物等）所消耗氧化剂的量,是一种评价水体污染程度的综合性指标,是当前节能减排工作考核的主要指标之一。《国家环境保护“十一五”规划》中明确指出“十一五”期间COD排放量削减10％。COD测定仪现已广泛应用于食品、制药、化工、农业、环境保护等行业。     

KNO3体系中离子液体辅助水煤浆电解脱硫

在稳流条件下,考察了KNO₃体系中离子液体辅助煤浆电解脱硫效果.研究了煤浆电解过程中离子液体结构、浓度、温度和时间对脱硫率的影响.当咪唑类离子液体有机结构相同时,不同阴离子脱硫率由高到低顺序为:Br^- >BF₄^- >Cl^-;当阴离子同为Br^-时,咪唑脱硫效果优于吡啶.随着吡啶类离子液体([BPy]Br)浓度增加,脱硫率先增加,在0.3 mol/L处达到最大值,而后下降.此外,脱硫率随温度和时间增加而增大.最后,通过X射线光电子能谱(XPS)分析技术对实验前后煤中有机硫形态进行了分析.结果表明,噻吩主要通过萃取-氧化反应脱除,而其他形式有机硫(如硫醚、亚砜)则主要通过促进氧化及水解反应脱除.     

Investigation of voltammetric enzyme-linked immunoassay based on new system of ODA-H_2O_2-HRP

A voltammetric enzyme-linked immunoassay based on a new system of ODA-H2O2-HRP has first been developed and used in the detection of HRP and labelled HRP. By this method, the enzyme-catalyzing reaction of H2O2 oxidizing odianisidine (ODA) couples the electrode-reduction reaction of the oxidizing product of odianisidine, which produces a sensitive polarographic wave at potential of -0.56V (SCE) in Britton-Robinson buffer solution. In using this polarographic wave, a detection limit to HRP is 3.7×10-12g/mL and a linear range 1.0×10-11-2.0×10-9g/mL. And the mechanisms of the coupling reaction and the process of electro-reduction in the ODA-H2O2-HRP voltammetric enzyme-linked immunoassay system have also been carefully studied.     

窄带脉冲信号测量横波衰减系数-频率曲线的方法

提出一种测量材料超声横波衰减-频率曲线(αs-f)的方法:应用窄带脉冲驱动接触式横波探头的脉冲反射方式,采用石英晶体作为耦合块,通过测量耦合块和被测试块耦合界面的声压反射和透射系数,并在衍射修正下测量得到单频率下的超声横波衰减系数;在探头有效带宽内改变发射频率并重复测量,得到不同频率下超声横波衰减系数数值;利用非线性最...     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.