化学气相沉积法中SnO2一维纳米结构的控制生长

以Sn和SnO为源材料，化学气相沉积法中通过控制反应物配比及载气中的氧含量等宏观实验条件，实现了SnO₂一维纳米结构的控制生长，成功获得各种不同横向尺度的SnO₂纳米线、纳米带以及直径连续变化的针状纳米结构. 通过扫描电子显微镜、X射线衍射仪对不同实验条件下所制备的样品进行形貌和晶格结构表征，认为高温生长点附近锡与氧的相对含量是控制SnO₂一维纳米结构生长的关键因素；并在此基础上对SnO₂一维纳米结构的生长机理进行了深入的讨论.     

A CVD diamond film detector for pulsed proton detection

A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.     

固体单相催化剂CVD法制备成束或分散MWCNT*

CVD法制备纳米碳管的催化剂多是以Al2 O3、SiO2 或MgO作载体 ,Fe、Ni或Co等过渡族金属为活性组分[1- 3] .催化剂与载体之间的关系存在多种形式[1] ,其中固溶体催化剂[4 ,5] 使过渡金属离子能均匀地分布在载体的内部和表面 .在后续反应过程中 ,均匀分布在表面或体内的金属离子被还原成具有催化活性的金属微粒 .此法称为“原位催化分解法 (insituCVD法 )” ,常用于制备直径分布较为均匀的纳米碳管 ,但以往的这些固溶体催化剂在制备纳米碳管的产量上并没有明显的改善 .本工作报道用燃烧法制备的Fe Mo Mg O固溶体 ,不但在用于CVD法生长…     

CVD金刚石膜断裂性能测试装置的研究

文章介绍弛一种利用恒载荷速率加载测试金刚石膜断裂性能的试验方法,并建立了国内第一台金刚石膜断裂性能测试的专用装置,该装置利用弹性压头代替传统的刚性压头,可以成功地解决断裂试验的缓慢加载问题,试验装置的最大载荷为500N,可以在5－500N之间获得准确的载荷,误差不大于1％,最小加载速率为0．5N/s,最大加载速率为25N／s,该装置采用计算机控制,可以直接输出试验结果,该装置采用恒载荷速率（0．5N／s 至2N/s)的加载方式测得的断裂性能比用恒位移速率（0．5mm/min和0．05mm/min)加载方式测得的断裂性能更低,适合高脆性,小尺寸金刚石膜试样断裂性能的测试。     

催化CVD调变PAN-ACF微结构研究

首次采用催化气相沉积法(CVD),以异丙醇为溶剂将催化剂[Ni(NO₃)₂·6H₂O]有效地分散在PAN-ACF较大的微孔上,使其成为积炭的活性位,从而将ACF的孔径调控在分子筛孔径效应范围内.以液氮为吸附质,测定了样品吸附等温线,采用H-K及DFT法计算孔结构,用XRD及SEM表征ACF的显微织构,并对该沉积过程进行了解释.     

BC2N薄膜的柱状生长及生长机理

应用热丝辅助等离子体化学气相沉积法(CVD)合成了表面呈柱状的BC₂N薄膜,X射线、红外及X射线电子能谱分析表明,薄膜的化学组分主要为BC₂N,B,C和N原子间互相结合成键.扫描电镜观察到,薄膜表面形貌呈排列整齐、取向一致的柱体,并且发现这种生长方式与沉积参数密切相关.最后从结合能方面讨论了柱状BC₂N的生长机理. 关键词： 2N')" href="#">BC₂N 柱状生长 CVD法     

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

This paper used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The results show that all the deposition parameters (methane concentration, substrate temperature, gas flow rate and ratio of H₂/Ar) could strongly influence the gas phase. C₂ is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C₂ and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C₂ is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.     

硼掺杂金刚石薄膜研究

硼掺杂是改善金刚石薄膜电阻率的有效手段,被认为是将金刚石薄膜用于制备电化学电极的途径.本文通过CVD法在单晶硅片上制得掺硼金刚石薄膜(BDD),并采用四点探针、扫描电镜、激光拉曼和电化学工作站对之进行检测,发现随着硼掺入量的增加,薄膜电阻率逐渐降低,重掺杂时可达2.0×10-3Ω·cm.同时金刚石薄膜的固有质量出现恶化,表现为金刚石晶粒的碎化以及拉曼观察到的薄膜内应力的增加和非金刚石峰的出现.对薄膜电极进行电化学测量发现BDD电极在酸性溶液中具有非常宽的电位窗口和高的阳极极化电位,且背景电流极低.     

直流等离子体喷射CVD技术制备自支撑金刚石膜的新结构和新形貌

采用30kW高功率直流等离子体喷射CVD技术制备了自支撑金刚石膜的新型结构,通过使甲烷与氢气的浓度比随沉积时间变化的方法,制备了两层、三层和四层结构.扫描电镜结果显示所制备的层结构是由柱状晶和非常细晶粒组成的,而拉曼谱结果表明这层细晶粒具有纳米金刚石的激光散射特征.在甲烷与氢气的浓度比超过15;的沉积条件下,我们发现一种新形貌,这种形貌是由具有非常好的刻面的晶粒构成的.     

纳米晶粒团聚GaN纳米线A1(LO)Raman峰的非对称展宽

Novel GaN nanowires were synthesized by a chemical vapor deposition (CVD) method. The morphology and structure of the nanowires were investigated by SEM, XRD and Raman spectra. Results show that GaN nanowires are formed by aggregated GaN nanocrystals, which is due to the non-uniform precipitation of GaN from catalyst droplet. An asymmetric broadening and shifting to lower frequency of A1(LO) peak are observed in the Raman spectra, which mainly contribute to the Fano interference between scattering from the k=0 optic phonon and electronic continuum scattering from laser-induced electrons.