Improvement in a-plane GaN crystalline quality using wet etching method

Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

铁电双层膜的反转动力学行为

基于Landau-Khalatnikov运动方程,本文研究了含有表面过渡层和铁电界面耦合的反转动力学行为(包括平均极化、反转时间、反转电流和矫顽场).研究结果表明:在铁电双层膜系统中存在一个竞争的机理,即表面过渡层与界面耦合的竞争作用.我们发现在双层膜反转过程中出现了反常行为,这些反常行为归因于表面过渡层与界面耦合之间的竞争.表面过渡层与界面耦合的共同行为对铁电双层膜的动力学特性起到了决定性的作用.     

金属基复合材料原位反应相场模型

原位反应法制备金属基复合材料具有增强体与基体间无杂质、无污染、颗粒分布均匀等优点,已成为制备金属基复合材料的一种重要方法,揭示其动力学机制及规律具有重要的理论及工业价值.然而,原位反应过程具有反应时间短、随机发生、温度高等特点,目前采用原位实验观测其反应过程仍存在较大困难.本文采用相场法模拟金属熔体内的原位反应过程,首先建立了能够描述双束金属熔体界面反应形核的相场模型,并采用该模型模拟了不同参数下相界反应形核过程.结果表明,形核率随着曲率半径及噪声强度的增大而增大,小曲率半径及强噪声条件下新相颗粒尺寸分布更加均匀,形核率随着过冷度的增大而先增大后减小.     

Particle captured by a field-modulating vortex through dielectrophoresis force

In microfluidic technology, dielectrophoresis (DEP) is commonly used to manipulate particles. In this work, the fluid-particle interactions in a microfluidic system are investigated numerically by a finite difference method (FDM) for electric field distribution and a lattice Boltzmann method (LBM) for the fluid flow. In this system, efficient particle manipulation may be realized by combining DEP and field-modulating vortex. The influence of the density ($\rho_{\rm p}$), radius ($r$), and initial position of the particle in the $y$ direction ($y_{\rm p0}$), and the slip velocity ($u_{0}$) on the particle manipulation are studied systematically. It is found that compared with the particle without action of DEP force, the particle subjected to a DEP force may be captured by the vortex over a wider range of parameters. In the $y$ direction, as $\rho_{\rm p}$ or $r $ increases, the particle can be captured more easily by the vortex since it is subjected to a stronger DEP force. When $u_{0}$ is low, particle is more likely to be captured due to the vortex-particle interaction. Furthermore, the flow field around the particle is analyzed to explore the underlying mechanism. The results obtained in the present study may provide theoretical support for engineering applications of field-controlled vortices to manipulate particles.     

A position-sensitive detector with lithium glass and MaPMT

A position-sensitive detector is designed for neutron detection. It uses a single continuous screen of a self-made lithium glass scintillator, rather than discrete crystal implementations, coupling with a multi-anode PMT (MaPMT). The scintillator is fast and efficient; with a decay time of 34 ns and thermal neutron detection efficiency of around 95.8% for the 3 mm thick screen, and its light yield is around 5670 photons per neutron and 3768 photons per MeV γ rays deposition. The spatial resolution is around 1.6 mm (FWHM) with the energy resolution around 34.7% by using α (5.2 MeV) rays test.     

卫星激光通信发展现状与趋势分析(特邀)

卫星激光通信凭借其宽带宽以及无电磁频谱约束等特点,成为解决卫星微波通信带宽瓶颈和缓减卫星频谱资源紧张,实现卫星高速通信的有效手段。本文介绍了卫星激光通信的系统组成及特点,分析了国内外卫星激光通信技术领域的发展脉络、最新研究进展和未来发展规划。结合未来空间网络与深空探测需求,从高速化、深空化、集成化、网络化、全光化五个方面总结了未来发展趋势,并对未来涉及的关键技术进行了讨论,为我国卫星激光通信技术研究提供借鉴和参考。     

Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.