悬链曲面上的点粒子动力学及扩展空间约束系统量子化

扩张型正则量子化方案的核心内容是位置、动量以及哈密顿量同时量子化. 通过分析悬链面上粒子的扩张型正则量子化方案, 并且与薛定谔理论进行比较, 发现内禀几何中二维悬链面给不出与薛定谔理论相一致的结果, 而考虑将二维悬链面嵌入在三维欧氏空间之后, 还需要将正则量子化方案进行扩张, 可以得到体系的几何势能和几何动量, 并与薛定谔理论相一致.     

Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.     

Computational mechanistic investigation of radiation damage of adenine induced by hydroxyl radicals

The radiation damage of adenine base was studied by B3LYP and MP2 methods in the presence of hydroxyl radicals to probe the reactivities of five possible sites of an isolated adenine molecule. Both methods predict that the C8 site is the more vulnerable than the other sites. For its bonding covalently with the hydroxyl radicals, B3 LYP predicts a barrierless pathway, while MP2 finds a transition state with an energy of 106.1 kJ/mol. For the hydroxylation at the C2 site, the barrier was calculated to be 165.3 k J/mol using MP2 method. For the dehydrogenation reactions at five sites of adenine, B3 LYP method predicts that the free energy barrier decreases in the order of H8 H2 HN62 HN61 HN9.     

Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors

A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO 2 nanowire electric-double-layer(EDL) field-effect transistor(FET) is fabricated on an ITO glass substrate at room temperature.An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance(～2.14 μF/cm 2) directly bound up with mobile ions-induced EDL(sandwiched between the top and bottom electrodes) effect.The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm 2 /V · s,current on/off ration of 2 × 10 4,and subthreshold gate voltage swing(S = dV gs /d(log I ds)) of 140 mV/decade.The threshold voltage V th(0.1 V) is estimated which indicates that the SnO 2 namowire transistor operates in an n-type enhanced mode.Such a low-voltage transparent nanowire transistor gated by a microporous SiO 2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.