Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors |
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Authors: | Xuan Rui-Jie Liu Hui-Xuan |
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Institution: | Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha 410082, China |
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Abstract: | A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO2 nanowire electric-double-layer (EDL) field-effect transistor (FET) is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of untralarge specific gate capacitance (~ 2.14 μF/cm2) directly bound up with mobile ions-induced EDL (sandwiched between top electrode and bottom electrode) effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V·s, current on/off ration of 2× 104, and subthreshold gate voltage swing (S=d Vgs/d(log Ids)) of 140 mV/decade. The threshold voltage Vth (0.1 V) is estimated which indicates that SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensor. |
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Keywords: | electric double layer proton conductor solid electrolytes nanowire transistors |
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