Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

阳虚体质者血清和尿液的核磁共振代谢组学

采用基于核磁共振(NMR)的代谢组学方法研究了中医阳虚体质及平和体质(正常对照)的血清和尿液, 分析了阳虚体质的特征代谢物. 实验收集阳虚体质及平和体质各30人的血清及尿液样品, 采用多元统计分析方法研究了阳虚质组和对照组血清和尿液中的内源性代谢差异. 结果表明, 阳虚质血清中乳酸、 极低密度脂蛋白/低密度脂蛋白、N-乙酰糖蛋白、脂肪酸及不饱和脂肪酸的含量降低, 谷氨酰胺、葡萄糖、磷脂酰胆碱及高密度脂蛋白的含量增多; 尿液中肌酐的含量降低, 乳酸、二甲胺、柠檬酸及马尿酸的含量增多. 阳虚体质的潜在生物标志物的发现从代谢组学角度为个体差异提供了新的依据. 阳虚体质与平和体质存在能量代谢、脂代谢及糖代谢的差异以及相关脏腑功能的改变.     

湖南砂矿金刚石中石墨包裹体拉曼光谱原位测定：形成条件及成因指示

石墨是天然金刚石中最常见的包裹体之一,按其形成顺序可分为原生、同生、次生,原生/同生与次生石墨包裹体的存在指示了金刚石形成的环境及形成后可能经历的变化。对湖南沅水流域产出的13粒宝石级-半宝石级砂矿金刚石中的原生/同生石墨包裹体及次生石墨包裹体进行显微激光拉曼光谱的原位测试。测试显示,湖南沅水流域金刚石中原生/同生石墨包裹体与次生石墨包裹体的G带与D带拉曼位移均存在漂移,其中原生/同生石墨包裹体G带的漂移范围为1 591～1 600 cm-1,次生石墨的漂移范围为1 575～1 588 cm-1,显示其形成压力较低,结晶压力变化范围大。原生/同生石墨漂移程度估算出该区域压力范围为4.01～5.88 GPa,估算结果与利用橄榄石包裹体拉曼位移估算的源区压力范围基本一致。该区域内金刚石中原生/同生石墨包裹体的D带拉曼位移在1 350～1 368 cm-1之间,D带与G带的强度比(I_D/I_G值)值位于0.36～0.82之间,具有较低有序度结构/结晶程度与橄榄岩型金刚石的高结晶度石墨明显不同指示该区域部分砂矿来源的金刚石的形成深度较浅,成因与榴辉岩关系更为密切,形成过程极可能曾位于石墨-金刚石稳定域附近。研究结果表明,金刚石石墨包裹体拉曼位移的漂移程度可成为探索金刚石原生源区形成环境的有效方法之一。     

Performance of a double sided silicon strip detector as a transmission detector for heavy ions

The performance of a double sided silicon strip detector （DSSSD）, which is used for the position and energy detection of heavy ions, is reported. The analysis shows that although the incomplete charge collection （ICC） and charge sharing （CS） effects of the DSSSD give rise to a loss of energy resolution, the position information is recorded without ambiguity. Representations of ICC/CS events in the energy spectra are shown and their origins are confirmed by correlation analysis of the spectra from both the junction side and ohmic side of the DSSSD.     

氧化镁中子过滤器研究

核电厂反应堆乏燃料水池格架材料在生产和使用过程中需要对其中子吸收性能进行监测和检测,针对这两方面需求,研制了乏燃料水池格架B₄C_Al材料的中子吸收性能检测设备。为了降低检测过程中超热中子本底的影响,考虑采用氧化镁超热中子过滤器滤除超热中子。对10 和5 cm氧化镁单晶的中子透射率与宏观总截面进行了理论计算,对慢化体表面中子成分进行蒙特卡罗模拟计算并开展实验测量。实验结果表明,10 cm氧化镁对采用8 cm聚乙烯慢化后的252Cf中子源的中子透射率为60.16%,相对镉比值比未加10 cm氧化镁时提高了93.85%,证明常温下采用氧化镁单晶做B₄C_Al检测装置的超热中子过滤器是可行的。     

浊点萃取-紫外可见分光光度法测定痕量金

建立了以四甲基联苯胺(TMB)为络合剂,非离子表面活性剂Triton-114为萃取剂的浊点萃取-紫外可见分光光度法测定痕量金的方法。考察了溶液的pH、络合剂和表面活性剂浓度、平衡温度和时间等条件对浊点萃取的影响。在最优条件下,该方法对金的富集倍数为12倍,线性范围为0～0.5μg/mL,检出限(3σ)为8.6ng/mL,相对标准偏差RSD为2.3%～3.6%(n=6),回收率在97%～102%之间。方法已用于工业废水中痕量金的测定。     

一类高阶有理差分方程解的收敛性(英文)

本文考查下列高阶有理差分方程xn+1=(α+B1xn-1+B3xn-3+…+B2k+1xn-2k-1)/(A+B0xn+B2xn-2+…+B2kxn-2k,),n=0,1,…,其中k是非负整数,参数α,A,Bi,i=0,1,2,…,2k+1和初始值x-2k-1,x-2k,x-2k+1,…,x0是非负实数.给出充分条件,在此条件下当且仅当∑k+1i=1B2i-1=A时,方程的每个解收敛于方程的一个二周期解.     

重离子耗散反应产物激发函数研究的新进展

评述了近两年多来在重离子耗散反应激发函数研究中新的实验结果与理论进展.重点介绍27Al+2 7Al耗散反应产物的长程角度关联以及19F+93Nb耗散反应中截面及其涨落测量的不可重复性. The experimental study and the theoretical development on the structures of excitation functions in dissipative heavy ion collisions last years were reviewed. Especially the long range angular correlation in the reaction of 27Al+ 27Al and the non reproducibility of the cross sections measured in the reaction of 19F+ 93Nb were introduced. The experimental results indicate that the angular coherent width in the dissipative...     

二级线性价格控制问题的满意解的求解思路及实例

本文就文献 [1]对线性二级价格控制问题 (BLP) 2 研究的结果及文献 [2 ]提出的问题进行了进一步的讨论。用反例指出文 [1]求出的极点最优解是错的 ,以及一般的 (BL P) 2 问题求出的最优解 ,可能是下层决策者根本无法接受的。因此 ,本文提出 (BLP) 2 的求下层目标最优解的边界搜索法及在此基础上用多目标的观点来求 (BLP) 2 的满意解的思路及实例     

A pair of integrated optoelectronic transceiving chips for optical interconnects

In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%.On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.