高剥离态Ge离子光谱分析

本工作分析了Ge 3s-3p、3p-3d实验光谱,给出一些新的跃迁实验数据,并同以前国际上发表的数据做了比较.这些数据是在中国原子能研究院HI-13串列加速器获得的.     

高剥离态Ge离子光谱分析

本工作分析了Ge 3s—3p、3p-3d实验光谱，给出一些新的跃迁实验数据，并同以前国际上发表的数据做了比较。这些数据是在中国原子能研究院HI-13串列加速器获得的。     

A high-precision multi-channel TAC and QAC module for the neutron detection wall

A single width NIM module that includes eight channels of the time-to-amplitude converter(TAC) and the charge-to-amplitude converter(QAC) is introduced in the paper, which is designed for the large neutron wall detector to measure charge(energy) and time interval simultaneously. The module adopts a high precision gated integration circuit to realize TAC and QAC. The input range of TAC is from 30 ns to 1 μs, and the input range of QAC is from 40 p C to 600 p C. The linearity error of TAC is lower than 1.28%, and the time resolution of TAC is less than 0.871%. The linearity error of QAC is lower than 0.81%, and the resolution of QAC is better than 0.936%.     

高剥离态Fe Ⅹ Ⅵ离子能级寿命测量

在原子能院串列加速器上,利用束箔方法,测量了能量为30 MeV Fe离子产生的高剥离态谱线跃迁结构的寿命值.在30 MeV时,Fe通过箔膜的电荷态分布在7+到17+,我们选择Fe XⅥ2p~6(~1S)4p—2p~6(~1S)5d(~2P_(3/2)~o—~2D_(3/2))的谱线,谱线波长124.696(?),能级寿命为79±4 ps.最后对实验误差进行了分析.     

类铍硫n=2的某些能级寿命的实验研究

主要报导用束箔技术对天体等离子体中重要元素硫的高电离态原子n =2的某些能级寿命的实验测量.实验数据用CANDY程序分析 ,并与理论计算结果和其它的实验结果作了比较. Lifetime measurement has been carried out for some low lying n=2 levels in the four electron ions S ⅩIII by using the beam-foil technique at National Laboratory of Heavy Ion Accelerator, Lanzhoiu, China. Spectra of highly ionized sulfur obtained at an energy of 2.5 MeV/nucleon have been studied in the 190-530  wavelength range. Experimental decay curves are analysized by the CANDY program, and compared with theoretical calculations and experimental measureaments.     

Implementation and verification of different ECC mitigation designs for BRAMs in flash-based FPGAs

Embedded RAM blocks(BRAMs) in field programmable gate arrays(FPGAs) are susceptible to single event effects(SEEs) induced by environmental factors such as cosmic rays, heavy ions, alpha particles and so on. As technology scales, the issue will be more serious. In order to tackle this issue, two different error correcting codes(ECCs), the shortened Hamming codes and shortened BCH codes, are investigated in this paper. The concrete design methods of the codes are presented. Also, the codes are both implemented in flash-based FPGAs. Finally, the synthesis report and simulation results are presented in the paper. Moreover, heavy-ion experiments are performed,and the experimental results indicate that the error cross-section of the device using the shortened Hamming codes can be reduced by two orders of magnitude compared with the device without mitigation, and no errors are discovered in the experiments for the device using the shortened BCH codes.     

高离化态镍的光谱

在中国原子能研究院串列加速器上利用束箔技术研究了120-400 ? 镍的高离化态镍光谱.验Ni XIII to XX研究中得到的谱线大多数属于Ni XIII 到 XX的跃迁,18条谱线是测量到的.     

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9% 84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm 2 ), which can be partially explained by the fact that the MBU rate for tilted ions of 30 is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm 2 ), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.     

Development of front-end readout electronics for silicon strip detectors

Front-end readout electronics have been developed for silicon strip detectors at our institute. In this system an Application Specific Integrated Circuit (ASIC) ATHED is used to realize multi-channel energy and time measurements. The slow control of ASIC chips is achieved by parallel port and the timing control signals of ASIC chips are implemented with the CPLD. The data acquisition is carried out with a PXI-DAQ card. The software has a user-friendly GUI developed with LabWindows/CVI in the Windows XP operating system. The test results show that the energy resolution is about 1.14% for alpha at 5.48 MeV and the maximum channel crosstalk of the system is 4.60%. The performance of the system is very reliable and is suitable for nuclear physics experiments.     

Production of projectile and target K-vacancy in near-symmetric collisions of 60-100 MeV Cu9+ ions with thin Zn target

We report studies on both target and projectile K-shell ionization by collisions of Cu⁹⁺ ions on the thin Zn target in the energy range of 60-100 MeV. In this work, the relative ratio for the production of the target to projectile K-vacancy is measured. The result shows that it almost remains stable over this energy range and has good consistency with the predictions by vacancy transfer via the 2pσ-1sσ rotational coupling, which gives experimental evidence for K-vacancy sharing between two partners. Furthermore, the discussion for comparisons between the experimental ionization cross sections and the possible theoretical estimations is presented. These comparisons suggest that the experimental data agree well with those predicted by the Binary-Encounter approximation (BEA) model but are not in good agreement with the modified BEA calculations. It allows us to infer that the direct ionization (and/or excitation) is of importance to initial K-vacancy production before 2pσ-1sσ transitions in the present collision condition.