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Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation |
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| Authors: | Zhang Zhan-Gang Liu Jie Hou Ming-Dong Sun You-Mei Su Hong Duan Jing-Lai Mo Dan Yao Hui-Jun Luo Jie Gu Song Geng Chao and Xi Kai |
| Institution: | [1]Institute of Modem Physics, Chinese Academy of Sciences, Lanzhou 730000, China [2]University of Chinese Academy of Sciences, Beijing 100049, China |
| Abstract: | single event effects, effective LET method, multiple-bit upset, upset cross section |
| Keywords: | single event effects effective LET method multiple-bit upset upset cross section |
| 本文献已被 CNKI 维普 等数据库收录！ | |