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Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation
Authors:Zhang Zhan-Gang  Liu Jie  Hou Ming-Dong  Sun You-Mei  Su Hong  Duan Jing-Lai  Mo Dan  Yao Hui-Jun  Luo Jie  Gu Song  Geng Chao  and Xi Kai
Affiliation:[1]Institute of Modem Physics, Chinese Academy of Sciences, Lanzhou 730000, China [2]University of Chinese Academy of Sciences, Beijing 100049, China
Abstract:single event effects, effective LET method, multiple-bit upset, upset cross section
Keywords:single event effects  effective LET method  multiple-bit upset  upset cross section
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