刻槽绝缘平行板对电子束的导向效应研究

采用不同材质的刻槽绝缘平行板,包括高纯度石英玻璃、聚四氟乙烯（Teflon）、酚醛树脂（电木）和聚甲醛板（赛钢板）,并在15 pA/mm2 ~14.3 nA/mm2范围内改变入射流强,利用1 500 eV电子束入射上述绝缘平行板,实验研究了上述平行板对电子束的导向行为。实验发现,上述电子束通过上述平行板时存在明显的导向现象,其导向行为与束流流强和绝缘材质无关。据此,可排除绝缘平行板内表面沉积电荷自组织充放电过程中,以绝缘材料的面电阻和体电阻对地泄放的线性形式放电过程。Adopting several grooved parallel plates made by different insulators, such as high-purity fused quartz, Teflon, Bakelite and POM (Polyformaldehyde), and further adjusting the electron beam current in a wide range (tens of pA~tens of nA), the discharging mechanism in the self-organizing charge and discharge processes of electron guiding was investigated and discussed by using 1 500 eV incident electron beam. The present results show that, the electron guiding behaviors are obviously existing when such electron beam is transmitted through the above grooved insulating parallel plates, which are independent on beam current and insulators. Our results suggest that, the possibilities of the accumulated charges on inner-surface of grooved parallel plates linearly discharging through surface and bulk resistances of plates into the ground should be excluded.     

低速~(84)Kr~(15+,17+)离子轰击GaAs单晶

用345 keV的Kr15+和340 keV的Kr17+离子以45fi角入射n型GaAs单晶(100)面,测量了表面形貌的变化和发射的375—500 nm Ga I和Kr II的特征光谱线.Krq+(q=15,17)离子轰击后表面形貌的变化主要取决于入射离子的电荷态q.离子沉积到靶表面的能量引起Ga原子激发,其辐射光谱为Ga I 403.2 nm和Ga I 417.0 nm.入射离子中性化过程中俘获GaAs导带电子形成高激发态原子,通过级联退激填充3p,4d等空穴,P壳层电子跃迁发射谱线为Kr II 410.0 nm,Kr II 430.4 nm,Kr II 434.0 nm和Kr II 486.0 nm,Kr II486.0 nm为较强谱线.实验结果表明,入射离子与GaAs单晶相互作用发射的可见光产额与入射离子的电荷态密切相关,较高电荷态Kr17+离子入射产生的光辐射产额大约为Kr15+离子的两倍.     

Production of projectile and target K-vacancy in near-symmetric collisions of 60-100 MeV Cu9+ ions with thin Zn target

We report studies on both target and projectile K-shell ionization by collisions of Cu⁹⁺ ions on the thin Zn target in the energy range of 60-100 MeV. In this work, the relative ratio for the production of the target to projectile K-vacancy is measured. The result shows that it almost remains stable over this energy range and has good consistency with the predictions by vacancy transfer via the 2pσ-1sσ rotational coupling, which gives experimental evidence for K-vacancy sharing between two partners. Furthermore, the discussion for comparisons between the experimental ionization cross sections and the possible theoretical estimations is presented. These comparisons suggest that the experimental data agree well with those predicted by the Binary-Encounter approximation (BEA) model but are not in good agreement with the modified BEA calculations. It allows us to infer that the direct ionization (and/or excitation) is of importance to initial K-vacancy production before 2pσ-1sσ transitions in the present collision condition.     

类氦C离子诱发不同金属厚靶原子的K-X射线

利用中国原子能科学研究院HI-13MV串列加速器上提供的动能为15—55 MeV的类氦C离子分别轰击Fe, Ni, Nb和Mo金属厚靶,采用HpGe探测器测量了K-X射线,获得了相应的K-X射线的发射截面.本文中由于各个靶原子外壳层电离度的不同,类氦C离子与Fe, Ni靶原子相互作用发射的K_β与K_α X射线的分支强度比随入射离子动能增加而减小,而Nb, Mo靶原子发射的K-X射线分支强度比变化不明显.利用厚靶截面公式计算了靶原子K-X射线的发射截面,并与不同的理论模型及质子的结果进行了对比.结果表明随类氦C离子动能的增大, Fe, Ni靶原子发射的K_β与K_α X射线的总产生截面与考虑多电离的两体碰撞近似修正模型最为符合Nb, Mo靶原子发射的K_β与K_α X射线的总产生截面与平面波恩近似模型的理论值最为接近.质子与单核子C离子能量相同时,质子比类氦C离子激发不同靶的K-X射线产生截面约小3个数量级.     

低速Xe~(q+)(4≤q≤20)离子与Ni表面碰撞中的光辐射

实验中测量了0.38V_(Bohr)(460 keV)高电荷态Xe~(q+)(4≤q≤20)离子轰击高纯Ni表面发射的400-510 nm光谱.实验结果包括NiⅠ原子谱线,NiⅡ离子谱线,以及入射离子中性化发射的XeⅠ,XeⅡ和XeⅢ谱线.研究了谱线XeⅡ410.419,XeⅢ430.444,XeⅡ434.200,XeⅡ486.254,NiⅠ498.245,NiⅠ501.697,NiⅠ503.502,NiⅠ505.061和NiⅠ508.293 nm的光子产额随着入射离子电荷态的变化.结果表明,入射离子中性化和溅射Ni原子发射谱线的光子产额随着入射离子电荷态的增加而增加,其趋势与入射离子势能一致.     

7075铝合金的Fe11+离子辐照损伤研究

7075铝合金因其优异的各项性能，作为结构部件，广泛应用于航天领域中。航天器空间环境中存在各种辐射粒子，这些粒子会对航天器材料产生不同程度的辐照损伤，对其可靠性构成了巨大的威胁，甚至会导致航天任务失败。通过选取不同剂量下3 MeV的Fe¹¹⁺离子辐照7075铝合金，采用XRD、AFM和纳米压痕等测试手段对7075铝合金的辐照损伤进行了研究，分析了辐照前后7075铝合金的微观组织、表面形貌和硬度的变化。结果显示，离子辐照后的7075铝合金未形成新的相，且结构保持完整，表明其具有一定的抗辐照性能。同时，观察表面发现了由级联碰撞演化及表面缺陷扩散导致的山峰状突起，且样品表面粗糙度和突起的分布密度随剂量增加呈先增加后减小的趋势。另外，纳米压痕测试表明，辐照后样品硬度增加，且随剂量增加，硬度逐渐趋于饱和，经分析可知，样品产生辐照硬化是由于辐照缺陷阻碍了位错的滑移导致。