Optical total reflection and transmission with mode control in a dielectric subwavelength nanorod chain

We report a polarization dependent reflection phenomenon beyond the normal incidence with a subwavelength nanorod chain.Light waves of the transverse electric mode will be totally reflected while those of the transverse magnetic mode will transmit through.The total reflection or transmission phenomenon can be seen as a constructive or destructive interference of the incident field with the transverse mode field of the chain.With the low-loss feature and the ultra-compact characteristic,this structure may find applications in photonic circuits.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

萤火虫氧化荧光素类似物电子光谱的理论研究

对萤火虫氧化荧光素(S)-2-(6-羟基-2-苯并噻唑基)-2-噻唑啉-4-酮(BTZ)中苯并噻唑环的N和S原子进行取代, 形成一系列萤火虫氧化荧光素类似物, 并采用TD B3LYP/6-31+G(d)方法, 通过计算氧化物中性态与羟基去质子化后的负一价态在气相、水溶液和模拟生物环境下的吸收与发射光谱, 讨论环内不同取代原子对光谱的影响. 结果表明, X₁位以O原子取代S原子的化合物的最大吸收值发生蓝移, 以N原子取代S原子的化合物的最大吸收值发生红移. 去质子化可增加苯环上π轨道成份, 降低能隙, 从而有利于提高电子跃迁几率, 使荧光发射波长红移; 通过取代X₁和X₂位杂原子, 可调节发射光谱红移达44 nm, 蓝移达41 nm(在模拟蛋白中). 6种化合物荧光发光范围较宽, 振子强度较大, 可以作为潜在的化学发光材料用于生物成像研究.     

激光辐照VO2薄膜温度场分布及透射特性研究

为了探究VO₂薄膜受激光辐照的温度场分布,以及1 064 nm激光直接辐照100 s内至相变的激光功率密度阈值,并比较近红外和中红外波段透过率调制特性差异。首先基于COMSOL建立了薄膜受激光辐照的模型并进行了温度场仿真,然后分别测试了薄膜正反面被不同功率密度的1 064 nm激光辐照100 s内激光透过率随时间响应特性。实验中的VO₂薄膜利用分子束外延法在Al₂O₃基底上制备得到。仿真结果表明,激光功率密度为25 W·mm^-2时,50 nm厚薄膜在被辐照1 ms时间内即达到相变温度。经激光辐照实验发现:50 nm厚的VO₂薄膜正反面受1 064 nm激光直接辐照100 s内至相变的功率密度阈值分别为4.1 W·mm^-2和5.39 W·mm^-2。30 nm厚VO₂薄膜对1 064 nmn激光的透过率调制深度约为13%,对3 459 nm激光透过率调制深度约62%,说明VO₂薄膜对近红外透过率调制特性不明显。     

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.     

可变功能产品功能使用模型及基于模型的关联耦合性分析

开展可变功能产品的构件关联性与功能耦合性的研究对设计该类产品有着重要的实用价值. 针对现有研究未能考虑功能使用情况的不足, 提出了可变功能产品功能使用模型的概念, 通过对各可变功能附加使用情况信息, 构建了可用以描述同一产品不同使用情况的功能使用模型; 随后将功能使用模型与功能-构件关联矩阵相结合, 提出了一种考虑功能使用情况的构件关联性与功能耦合性的量化方法. 最后, 通过一可变功能料理机的案例, 阐述了该方法的可行性及实施过程, 并基于构件关联性和功能耦合性的求解结果, 得出了对设计面向使用的产品或对现有产品进行改进设计具有指导意义的结论.     

基于PSpice的半导体激光高频调制系统设计

为了实现高频率的调制激光输出,设计了一种驱动系统由信号放大、电流调制、过流保护和具有慢启动功能的直流偏置电路高度集成的半导体激光高频调制系统。此系统采用了结构简单的直接调制方式,运用线性调频的高频信号去控制半导体激光器发射激光的强度,从而实现高频调制。在运用OrCAD/PSpice对高频调制驱动系统进行模拟仿真的基础上,最终研制出的半导体激光高频调制系统实现了频率为40.02 MHz、直流偏置为493.326 mA、正弦波调制电流峰峰值为850 mA的高频调制输出,调制激光平均功率为300 mW。     

基于光谱合束技术的透射光栅模拟设计

半导体激光器光谱合束技术能够实现近衍射极限的高功率激光输出,已成为当前研究热点。衍射光栅的性能直接决定光谱合束的激光输出效果。模拟设计了一种针对940 nm波长、熔融石英材料的亚波长透射光栅。基于严格耦合波理论对光栅结构进行初步设计,运用Rsoft软件依次对光栅占空比、脊高和周期等参数进行优化确定,同时分析了各个参数对光栅衍射效率的影响。所设计的透射式光栅实现第-1级衍射级次的波分复用功能,衍射效率达到91.2%(TE模式),同时压缩其他衍射级次,使其衍射效率降到1.2%以下。同时在光栅入射角度59°±3°范围内保持90%以上的衍射效率,实现高功率激光输出的同时具有较高的误差容错率,易于调节,满足光谱合束技术的要求。     

Structural transitions of SWNT filled with C_(60) under high pressure

Raman spectra of C_(60) filled single-walled carbon nanotubes(C_(60)@SWNTs) with diameters of 1.3–1.5 nm have been studied under high pressure. A plateau in the pressure dependence of the G-band frequency at around 10 GPa was observed in both experiments with 514 nm and 830 nm excitation lasers, which is similar to the high pressure behaviors of pristine SWNTs. This structural transition has been assigned to the transformation into a peanut-like structure of the nanotubes. At pressure below 2 GPa, no obvious Raman signature related to the structural transition of nanotubes was observed, unlike what has been reported for C_(70) filled nanotubes. We discussed this point in terms of the arrangement differences of C_(60) and C_(70)molecules inside the nanotubes. At higher pressure up to 15 GPa, a graphite-like pressure evolution was observed in our C_(60)@SWNTs.     

Ph-ATP@PANI复合材料的制备及防腐性能研究

以苯基-三乙氧基硅烷改性纳米凹凸棒石(Ph-ATP)为载体, 通过原位聚合制备了Ph- ATP@PANI纳米复合材料, 通过红外光谱(FTIR)、热重分析(TGA)、扫描电镜(SEM)和透射电镜(TEM)等表征了复合材料的微观结构和形貌. 以Ph-ATP@PANI纳米复合材料为填料制备了Ph-ATP@PANI/环氧树脂防腐涂层, 用电化学阻抗谱(EIS)、极化曲线(Tafel)以及盐雾试验分析了涂层的防腐性能. 测试结果表明, 相比纯PANI, Ph-ATP@PANI复合材料中PANI的红外特征吸收峰蓝移、热分解温度降低, Ph-ATP@PANI粒子在环氧树脂涂层中的分散性增强, 涂层的防腐蚀性能显著提升.