高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜

在超高真空分子束外延（MBE）生长技术中，反射式高能电子衍射仪（RHEED）能实时显示半导体和金属外延生长过程，给出薄膜表面结构和平整度的信息，成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导（YBa₂Cu₃O₇） 、铁电薄膜（Sr_1-xBa_x TiO₃）及它们的同质和异质外延结构的生长机理，获得高质量的符合各种应用 需要的氧化 物多层薄膜结构，在常规的制备氧化 关键词： 高温超导薄膜 RHEED     

Synthesis and characterization of white‐light‐emitting polyfluorenes containing orange phosphorescent moieties in the side chain

Two orange phosphorescent iridium complex monomers, 9‐hexyl‐9‐(iridium (III)bis(2‐(4′‐fluorophenyl)‐4‐phenylquinoline‐N,C^2′)(tetradecanedionate‐11,13))‐2,7‐dibromofluorene (Br‐PIr) and 9‐hexyl‐9‐(iridium(III)bis(2‐(4′‐fluorophenyl)‐4‐methylquinoline‐N,C^2′)(tetradecanedionate‐11,13))‐2,7‐dibromofluorene (Br‐MIr), were successfully synthesized. The Suzuki polycondensation of 2,7‐bis(trimethylene boronate)‐9,9‐dioctylfluorene with 2,7‐dibromo‐9,9‐dioctylfluorene and Br‐PIr or Br‐MIr afforded two series of copolymers, PIrPFs and MIrPFs, in good yields, in which the concentrations of the phosphorescent moieties were kept small (0.5–3 mol % feed ratio) to realize incomplete energy transfer. The photoluminescence (PL) of the copolymers showed blue‐ and orange‐emission peaks. A white‐light‐emitting diode with a configuration of indium tin oxide/poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)/PIr05PF (0.5 mol % feed ratio of Br‐PIr)/Ca/Al exhibited a luminous efficiency of 4.49 cd/A and a power efficiency of 2.35 lm/W at 6.0 V with Commission Internationale de L'Eclairage (CIE) coordinates of (0.46, 0.33). The CIE coordinates were improved to (0.34, 0.33) when copolymer MIr10PF (1.0 mol % feed ratio of Br‐MIr) was employed as the white‐emissive layer. The strong orange emission in the electroluminescence spectra in comparison with PL for these kinds of polymers was attributed to the additional contribution of charge trapping in the phosphorescent dopants. © 2007 Wiley Periodicals, Inc. JPolym Sci Part A: Polym Chem 45: 1746–1757, 2007     

Dirichlet型空间上的乘子

本文主要根据τ与μ的不同取值分三种情况刻划了Cn中单位球上Dirichlet 型空间上的点乘子空间M(Dτ,Dμ),并通过两个函数的构造表明:当τ≤n时,包含 关系M(Dτ)(?)Dτ和当τ>μ,τ>n-1时,包含关系M(Dτ)(?) M(Dμ)是严格的.     

On the blow-up rate of large solutions for a porous media logistic equation on radial domain

In this paper we establish the exact blow-up rate of the large solutions of a porous media logistic equation. We consider the carrying capacity function with a general decay rate at the boundary instead of the usual cases when it can be approximated by a distant function. Obtaining the accurate blow-up rate allows us to establish the uniqueness result. Our result covers all previous results on the ball domain and can be further adapted in a more general domain.     

一类拟线性大系统的稳定性

本文应用大系统的分解方法和一个推广的不等式,研究了一类拟线性大系统的稳定性问题,所得结果简洁、易于验证,且推导过程不复杂,最后给出了应用实例。     

Renormalization group dependence of the QCD coupling

The general relation between the standard expansion coefficients and the beta function for the QCD coupling is exactly derived in a mathematically strict way. It is accordingly found that an infinite number of logarithmic terms are lost in the standard expansion with a finite order, and these lost terms can be given in a closed form. Numerical calculations, by a new matching-invariant coupling with the corresponding beta function to four-loop level, show that the new expansion converges much faster.     

微纳米加工技术在纳米物理与器件研究中的应用

物质在纳米尺度下可能呈现出与体材料不同的物理特件，这正是纳米科技发展的基础之一。要想探索在纳米尺度下材料物埋性质的变化规律及可能的应用领域，离不开相应的技术手段，微纳米加工技术作为当今高技术发展的重要技术领域之一，是实现功能人工纳米结构与器件微纳米化的基础。本文根据几个不同的应用领域，介绍了微纳米加工技术在纳米物理与器件研究领域的应用。     

用一类特定的双耦合Duffing振子系统检测强色噪声背景中的周期信号

通过分析耦合参数作用、系统所呈现大尺度周期相态的复杂性以及与系统在无噪声条件下状态的比较，得出耦合振子系统的动力学行为比同类单振子系统的复杂，周期相态更稳定、抗噪能力更强.用构造的一类含特定恢复力项双中强度耦合Duffing振子系统检测色噪声背景中的谐波、方波信号，信噪比分别达到-111.0和-108.45dB. 关键词： 特定双耦合 Duffing振子系统 色噪声 周期信号 信噪比     

Generalization of Einstein relation for doped organic semiconductors

Under the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation for electron and hole transport in doped organic semiconductor thin films are developed. Numerical calculations show that, although traditional Einstein relation still holds for low carrier concentrations, that is, the diffusion-coefficient-to-mobility ratio in units of k_BT/q, with k_B the Boltzmann’s constant, T the temperature and q the elementary charge, equals 1. But when the electron (hole) concentration is high, the diffusion-coefficient-to-mobility ratio for electrons (holes) changes strongly with the electron (hole) concentration, the doping level, the mean energy of LUMOs (HOMOs) of the dopant E_Ld (E_Hd) and the host E_L (E_H), as well as their variances. Dopants with E_Ld<E_L (E_Hd>E_H) affect the diffusion-coefficient-to-mobility ratio mainly in the range of low and middle carrier concentrations, while those with E_Ld>E_L (E_Hd<E_H) have significant effect only in the range of high carrier concentrations. It was found that there can be a maximum in the dependence of the diffusion-coefficient-to-mobility ratio on the quasi-Fermi energy or carrier concentration exist, for appropriate values of the doping level, the mean energy and variance of LUMO or HOMO states of the dopant. PACS 71.20.Rv; 72.90.+y; 73.50.-h