首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2篇
  免费   11篇
  国内免费   2篇
物理学   15篇
  2018年   1篇
  2017年   1篇
  2015年   1篇
  2011年   2篇
  2010年   1篇
  2009年   1篇
  2008年   2篇
  2006年   3篇
  2005年   1篇
  2004年   2篇
排序方式: 共有15条查询结果,搜索用时 16 毫秒
1.
微纳米加工技术在纳米物理与器件研究中的应用   总被引:1,自引:0,他引:1  
物质在纳米尺度下可能呈现出与体材料不同的物理特件,这正是纳米科技发展的基础之一。要想探索在纳米尺度下材料物埋性质的变化规律及可能的应用领域,离不开相应的技术手段,微纳米加工技术作为当今高技术发展的重要技术领域之一,是实现功能人工纳米结构与器件微纳米化的基础。本文根据几个不同的应用领域,介绍了微纳米加工技术在纳米物理与器件研究领域的应用。  相似文献   
2.
Nb/Al-AlOx/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al-AlOx/Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with Vm=100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm^2, which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.  相似文献   
3.
Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carrier densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carrier densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~67.3 meV can be extracted from the thermal emission-diffusion theory.  相似文献   
4.
磁性金属纳米结构的畴壁特性与磁逻辑电路构筑   总被引:1,自引:0,他引:1       下载免费PDF全文
自旋电子学由于其丰富的物理内涵和广泛的应用前景受到学术界和工业界的高度重视,成为近年来凝聚态物理和信息技术领域关注的焦点。本文介绍了利用磁性金属纳米结构实现作为自旋电子器件基础的自旋注入的方法,特别涉及利用铁磁金属纳米点接触结构钉扎磁畴的特点,研究自旋极化电流与磁畴壁的相互作用规律, 理解纳米结构中畴壁的动力学行为,并以此为基础构筑结构简单、性能优异的全金属磁逻辑电路,从而实现了由电信号驱动,通过电信号检测,并与CMOS技术兼容的目的。  相似文献   
5.
石墨烯在未来微电子学领域有极大的应用前景,但是其零带隙的特点阻碍了石墨烯在半导体领域的应用.研究发现,打开室温下可用的石墨烯带隙所需要的石墨烯纳米结构尺度在10 nm以下,这一尺度的纳米结构一方面制备比较困难,另一方面器件可承载的驱动电流较小.因此,如何实现亚10 nm石墨烯纳米结构的有效加工以及如何在有效调控带隙的基础上增大石墨烯器件可承载的驱动电流,还需要进一步的研究.本文首先研究了利用聚甲基丙烯酸甲酯/铬(PMMA/Cr)双层结构工艺,通过刻蚀时间的控制,利用电子束曝光及刻蚀工艺实现了亚10 nm石墨烯纳米结构的可控制备.同时设计并制备了单排孔石墨烯条带结构,该结构打开的带隙远大于相同特征宽度石墨烯纳米带所能打开带隙的大小.该结构在有效打开石墨烯带隙的同时,增加了石墨烯纳米结构可以承载的驱动电流,有利于石墨烯在未来微电子领域的应用.  相似文献   
6.
电流在铁磁金属中可以用来驱动磁畴壁,从而可以进行信息的读写。然而,具体如何在器件中实现并不清楚。文章作者利用纳米加工技术制作出铁磁金属纳米点接触结构和逻辑电路,并对纳米结构中畴壁的输运性质和逻辑电路特性进行了研究。发现了铁磁纳米点接触结构在电流驱动下存在的高阻态及低阻态,通过设计不同形状的点接触结构,用电学测量方法验证了畴壁在自旋极化电流作用下的移动方向与电流方向的关系。并基于电流控制点接触电阻变化的结果,制作出能够实现逻辑"非"功能的全金属逻辑电路,实现了电路的电信号驱动和利用电信号的检测功能。  相似文献   
7.
一种结构紧凑的高温超导窄带带通滤波器   总被引:1,自引:0,他引:1  
研制了一种结构紧凑的高温超导窄带滤波器.该滤波器中心频率为,是在以0.5mm厚的LaAO3(εr≈24)为衬底的YBCO超导薄膜上制作的.测试结果显示该滤波器具有比较好的性能,其插入损耗<0.3dB,反射损耗<-16dB,相对带宽<9‰, 带边陡度>9dB/MHz, 中心频率误差<0.05%.滤波器设计中,利用特殊技术成功地改善了过渡带上的零点特性,为今后研制新型的结构紧凑的滤波器开拓了思路.  相似文献   
8.
The attractions of cantilevers made of multiwalled carbon nanotubes(MWNTs)and secured on one end are studied in the non-uniform magnetic field of a permanent magnet.Under an optical microscope,the positions and the corresponding deflections of the original cantilevers(with iron catalytic nanoparticles at the free end)and corresponding cut-off cantilevers(the free ends consisting of open ends of MWNTs)are studied.Both kinds of CNT cantilevers are found to be attracted by the magnet,and the point of application of force is proven to be at the tip of the cantilever.By measuring and comparing deflections between these two kinds of cantilevers,the magnetic moment at the open ends of the CNTs can be quantified.Due to the unexpectedly high value of the magnetic moment at the open ends of carbon nanotubes,it is called giant magnetic moment,and its possible mechanisms are proposed and discussed.  相似文献   
9.
In this work we report that when ferromagnetic metals (Fe,Co and Ni) are thermally evaporated onto n-layer graphenes and graphite,a metal nanowire and adjacent nanogaps can be found along the edges regardless of its zigzag or armchair structure.Similar features can also be observed for paramagnetic metals,such as Mn,Al and Pd.Meanwhile,metal nanowires and adjacent nanogaps cannot be found for diamagnetic metals (Au and Ag).An external magnetic field during the evaporation of metals can make these unique features disappear for ferromagnetic and paramagnetic metal;and the morphologies of diamagnetic metal do not change after the application of an external magnetic field.We discuss the possible reasons for these novel and interesting results,which include possible one-dimensional ferromagnets along the edge and edge-related binding energy.  相似文献   
10.
We fabricate a series of periodic arrays of subwavelength square and rectangular air holes on gold films, and measure the transmission spectra of these metallic nanostructures. By changing some geometrical and physical parameters, such as array period, air hole size and shape, and the incident light polarization, we verify that both global surface plasmon resonance and localized waveguide mode resonance are influential on enhancing the transmission of light through nanostructured metal films. These two resonances induce different behaviours of transmission peak shift. The transmission through the rectangular air-hole structures exhibits an obvious polarization effect dependent on the morphology. Numerical simulations are also made by a plane-wave transfer-matrix method and in good consistency with the experimental results.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号