铝掺杂表面分子印迹聚合物修饰电极检测食品中罗硝唑残留

以罗硝唑(Ronidazole,RNZ)为模板,3-氨丙基三乙氧基硅烷为功能单体,Al(Ⅲ)为路易斯酸掺杂剂,用溶胶-凝胶法制备核壳型磁性分子印迹聚合物,借助磁力作用将其修饰于磁性玻碳电极表面,制得RNZ电化学印迹传感器。以透射电镜、红外光谱、X-射线衍射及电化学方法等对该传感器进行表征,并对影响传感器性能的主要参数进行优化。结果表明,相比基于非掺杂印迹聚合物和非分子印迹聚合物的传感器,铝掺杂印迹传感器对罗硝唑具有更强的结合能力和更高的识别选择性。用差分脉冲溶出伏安法进行定量测定时,RNZ的还原峰电流与其浓度在0.05~50.0μmol/L范围内呈良好线性关系(r=0.997 3),检出限为0.015μmol/L。对牛奶、鸡蛋中RNZ的回收率为88.6%~97.0%,相对标准偏差(RSD)为2.9%~4.6%。     

Monte Carlo simulation of indoor external exposure due to gamma-emitting radionuclides in building materials

The use of building materials containing naturally occurring radionuclides such as^40K,^238U,^232Th and their progeny, could lead to external exposures to the residents of such buildings. In this paper, a set of models are constructed to calculate the specific effective dose rates（the effective dose rate per Bq/kg of ^40K, the ^238U series,and the ^232Th series） imposed on residents by building materials with the MCNPX code. The effect of chemical composition, position concerned in the room and thickness as well as density of material is analyzed. In order to facilitate more precise assessment of indoor external dose due to gamma-emitting radionuclides in building materials,three regressive expressions are proposed and validated by measured data to calculate specific effective rates for40 K,the238U series and the232 Th series, respectively.     

GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer

A GaN interlayer between low temperature （LT） A1N and high temperature （PIT） A1N is introduced to combine HT AIN, LT A1N and composition-graded A1GaN as a novel buffer layer for GaN films grown on Si （111） substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT A1N, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT A1N thickness.     

A Diode-Pumped 1617 nm Single Longitudinal Mode Er：YAG Laser with Intra-Cavity Etalons

We demonstrate the continuous wave p-polarized single longitudinal mode （SLM） operation of an Er：YAG laser at 1617.6nm pumped by a diode-laser with three inserted Fabry-Perot （FP） etalons at room temperature. The Brewster angle inserted FP is applied to obtain the p-polarized laser. For free running, the maximum output power is 570 m W with a pump power of 12.5 W. An incident pump power of 12.5 W is used to generate the maximum p-polarized single longitudinal mode output power of 78.5 m W, corresponding to a slope efficiency of 1.6% and an optical-to-optical efficiency of 0.61%. The beam quality M2 is measured to be 1.15 at the highest SLM output power. This stable polarized SLM oscillation is encouraging due to its application for an injection-locked system used as a master laser.     

铜丝光沸石上甲醇羰基化反应的固体核磁共振研究

利用固体核磁共振方法,研究了铜修饰丝光沸石(Cu-H-MOR)分子筛催化甲醇(CH3OH)与一氧化碳(CO)羰基化反应过程.通过研究反应过程中生成的各吸附物种与Cu2+的相互作用,分别对这些吸附物种进行了归属,确定了铜甲氧基(Cu-OCH3)和铜乙酰基(Cu-(CO)-CH3)为羰基化反应过程的中间产物,讨论了可能的反应机理.     

Al掺杂浓度对ZnO陶瓷释能电阻材料性能的影响

为了制备ZnO释能电阻并研究Al掺杂浓度对ZnO释能电阻材料的影响,通过改进的制陶工艺制备了不同Al掺杂浓度的ZnO导电陶瓷。实验结果表明,Al掺杂浓度对ZnO释能电阻的导电性、能量密度和线性度均有较大的影响。Al的掺杂能较好地改善ZnO释能电阻的线性度,非线性系数可低至1.02;Al掺杂能很好地控制ZnO的电阻率,使其达到0.54 Ω·cm;Al掺杂还能较好地改善ZnO陶瓷的均匀性和密度,从而提高ZnO释能电阻的能量吸收密度,能量吸收密度高达720 J/cm³,较金属释能材料高出2~3倍。     

电极材料对IGZO薄膜晶体管性能的影响

采用射频磁控溅射方法在n型硅片上制备了底栅顶结构的铟镓锌氧-薄膜晶体管(IGZO-TFT)。分别采用Au、Cu、Al 3种金属材料作为电极,研究不同电极材料对IGZO薄膜晶体管性能的影响。器件的输出特性和转移特性测试结果表明:以Au为电极的IGZO-TFT具有最佳的性能,其饱和输出电流达到17.9μA,开关比达到1.4×106。基于功函数比较分析了3种电极的接触特性,根据TLM(Transmission line model)理论推算得出Au电极具有三者中最小的接触电阻。     

Mg2+、Al3+离子增强SrTiO3∶Pr3+荧光体发光性能的研究

采用溶胶凝胶法成功制备了SrTiO3∶Pr3+、SrTiO3∶Pr3+, Mg2+ 及SrTiO3∶Pr3+, Al3+荧光粉.通过XRD、PL谱及第一性原理计算对样品的晶体结构、光谱特性及发光增强机制进行了研究.研究结果表明：共掺杂后,SrTiO3∶Pr3+荧光粉为单一组成的SrTiO3立方相,主发射锋位于617 nm, 对应于Pr3+离子的1D2→3H4跃迁发射.SrTiO3∶Pr3+, Mg2+ 及SrTiO3∶Pr3+, Al3+荧光粉的发光强度分别是SrTiO3∶Pr3+荧光粉发光强度的7倍和2倍,但主要发光机制没有改变.Mulliken布局分析表明,Mg2+、Al3+离子的掺入使SrTiO3∶Pr3+荧光粉中Ti-O及Pr-O键的化学键增强、键长变短,SrTiO3∶Pr3+基质向Pr3+离子发光中心的能量传递效率提高,导致SrTiO3∶Pr3+, Mg2+ 及SrTiO3∶Pr3+, Al3+荧光粉的发光效率提高.     

低功耗聚合物Mach-Zehnder热光开关

采用传统的半导体工艺制作了聚合物Mach-Zehnder型热光开关.利用扫描电镜观测波导形貌,通过红外摄像机观测波导的近场输出光斑,在通信波段1 550 nm波长下测试了器件的输出光谱.在电极上施加直流信号,测得热光开关的消光比为－15 dB,驱动功率为16 mW.引入直流偏置网络,获得了器件的开关特性曲线,经测量开关上升时间为1.2 ms,下降时间为0.8 ms.     

基于SSCVD方法的a-b轴取向ZnO薄膜制备

以Zn₄(OH)₂(O₂CCH₃)₆·2H₂O为单一固相有机源,采用单源化学气相沉积法(Single sour cechem icalvapor deposition,SSCVD)在Si(100)衬底上制备ZnO薄膜,用X射线衍射(XRD)、原子力显微镜(AFM)分析ZnO薄膜样品的晶体结构和微观形貌,并用X射线光电子能谱(XPS)对薄膜的锌氧化学计量比进行了分析。研究结果表明:在非平衡条件下所得到的ZnO薄膜沿a-b轴取向生长,基片温度对ZnO薄膜生长过程影响较大,随着基片温度的升高,薄膜呈现c轴生长趋势;晶粒成柱状、尺寸均匀、膜层结构致密;薄膜样品中n_Zn:n_O=0.985。