| GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer |
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| 引用本文： | 房育涛,江洋,邓震,左朋,陈弘.GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer[J].中国物理快报,2014(2):130-133. |
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| 作者姓名： | 房育涛 江洋 邓震 左朋 陈弘 |
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| 作者单位： | Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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| 基金项目： | Supported by the National High-Technology Research and Development Program of China under Grant Nos 2011AA03A112 and 2011AA03A106, and the National Natural Science Foundation of China under Grant Nos 60890192, 50872146 and 60877006. |
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| 摘 要： | A GaN interlayer between low temperature （LT） A1N and high temperature （PIT） A1N is introduced to combine HT AIN, LT A1N and composition-graded A1GaN as a novel buffer layer for GaN films grown on Si （111） substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT A1N, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT A1N thickness.
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| 关 键 词： | Si（111）衬底 GaN薄膜 薄膜生长 AlN 缓冲器 低温 过渡层 复合 |
GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer |
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| FANG Yu-Tao,JIANG Yang,DENG Zhen,ZUO Peng,CHEN Hong.GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer[J].Chinese Physics Letters,2014(2):130-133. |
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| Authors: | FANG Yu-Tao JIANG Yang DENG Zhen ZUO Peng CHEN Hong |
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| Institution: | ( Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190) |
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