旋转靶强流中子源及其应用

 一、旋转靶强流中子源的现状一般讲,强流中子源是指中子注量在4π空间中一秒钟内具有近于或等于或大于1×10¹²个中子的辐射场。它可以利用反应堆得到平均能量为1MeV的中子;利用高能电子或质子加速器可得能量为数MeV的中子。国内外最近一、二十年来,在强流中子源方面做了大量的研究实验工作,除了利用加速器的（d-Be）,（p-Be）和（d-D）反应产生中子外,大量的工作集中在用（d-T）反应并使用高速旋转的氚靶以产生强流中子场。     

ZnO高掺杂Ga的浓度对导电性能和红移效应影响的第一性原理研究

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法,在相同环境条件下建立了浓度不同的由Ga原子取代Zn原子的Zn_1-xGa_xO模型.对低温高掺杂Ga原子的Zn_1-xGa_xO半导体的能带结构、态密度和吸收光谱进行了计算.结果表明:Ga原子浓度越大,进入导带的相对电子数越多,但是电子迁移率反而减小.通过对掺杂和未掺杂ZnO的电导率以及最小间隙带宽度分别进行了比较 关键词： ZnO高掺杂Ga 电导率 红移 第一性原理     

具有阶段结构的时滞分数阶捕食者-食饵系统的稳定性分析

本文研究了具有阶段结构的时滞分数阶捕食者-食饵系统稳定性,给出了两类具有阶段结构的时滞分数阶捕食者-食饵系统,并详细的对这两类系统进行了稳定性分析,得到了平衡点的渐近稳定性条件和参数稳定区间.此外,给出了两个数值实验,证明了理论结果的有效性.     

因子von Neumann代数上导子的等价刻画

设R是含非平凡幂等元P的素环,C∈R,C=PC.本文证明可加映射△:R→R在C可导,即△(AB)=△(A)B+A△(B),A,B∈R,AB=C当且仅当存在导子δ:R→R,使得△(A)=δ(A)+△(I)A,A∈R.没有I_1型中心直和项的von Neumann代数上的可导映射也有类似结论.利用该结论证明了,若非零算子C∈B(X),使得ran(C)或ker(C)在X中可补,则可加映射△:B(X)→B(X)在C可导当且仅当它是导子.特别地,证明了因子von Neumann代数上的可加映射在任意但固定的非零算子可导当且仅当它是导子.     

关于多值解析函数的教学研究

复变函数论中的多值函数教学是一个难点.钟玉泉先生的教材在这一难点的处理方面是较成功的.他通过例题,介绍多值函数分成单值分支的方法,介绍求函数值的方法,并对这些方法进行了总结,得出的结论是:当给定初值后,只有通过连续变化才能得到其它点的函数值.这一点和传统的代入法求函数值完全不同.然而该教材就在这一总结之后,又用代入法求Arcsin2.我们认为这自我否定了刚刚建立起来的求值方法,扰乱了读者的思想.本文通过对Arcsinz分成单值解析分支的讨论,对求Arcsin2提出了新的教材处理方案,以期和读者商榷.     

An extended segment pattern dictionary for a pattern matching tracking algorithm at BESⅢ

A pattern matching based tracking algorithm, named MdcPatRec, is used for the reconstruction of charged tracks in the drift chamber of the BES detector. This paper addresses the shortage of segment finding in the MdcPatRec algorithm. An extended segment construction scheme and the corresponding pattern dictionary are presented. Evaluation with Monte-Carlo and experimental data show that the new method can achieve higher efficiency for low transverse momentum tra     

三叶孔板换热器壳程流体流动和传热研究

三叶孔支撑板是广泛应用于核电站换热器中的一种管束支撑结构,其性能的好坏对核电厂的运行及安全有着重要的影响。文中运用"单元流道"模型,分析了流道内流动和传热的细观特性,研究了三叶孔支撑板换热器中开孔高度、支撑板间距和壳程流量对传热、压降的影响。结果表明,三叶孔支撑板换热器的性能随开孔高度和支撑板间距的增加而增加,随壳程流量的增加而降低。     

Installation and cosmic ray test of the high voltage system of the BESⅢ drift chamber

After examination of the designed high voltage power supply system of the BESⅢ drift chamber in the beam test of the full length prototype of drift chamber, a full system covering all the channels of high voltage was installed. The system's training and the high voltage value adjustment were carried out in the cosmic ray test of the BESⅢ drift chamber. The cosmic ray test for the full system and its final installation on the BESⅢ drift chamber were reported. The full system of high voltage power supply works stably and reliably.     

数学定理教学的“转识成智”——以初中“垂径定理”起始课为例北大核心

1问题提出重视定理教学“过程”是核心素养培养的必然要求,也获得了中小学数学教师的广泛赞同,但有些“过程”却事与愿违.以初中“垂径定理”的教学为例,很多教师并没有关注到这是“圆”章节的起始定理,直接让学生沿直径翻折圆形纸片,得出圆的轴对称性,并用动态课件验证(环节1);继而形式化分析证明圆的轴对称性,由此得到“垂径定理”(环节2).     

Enhanced thermoelectric properties of p-type polycrystalline SnSe by regulating the anisotropic crystal growth and Sn vacancy

Thermoelectric selenides have attracted more and more attentions recently.Herein,p-type Sn Se polycrystalline bulk materials with good thermoelectric properties are presented.By using the SnSe_2 nanostructures synthesized via a wetchemistry route as the precursor,polycrystalline Sn Se bulk materials were successfully obtained by a combined heattreating process under reducing atmosphere and following spark plasma sintering procedure.As a reference,the Sn Se nanostructures synthesized via a wet-chemistry route were also fabricated into polycrystalline bulk materials through the same process.The thermoelectric properties of the Sn Se polycrystalline transformed from SnSe_2 nanostructures indicate that the increasing of heattreating temperature could effectively decrease the electrical resistivity,whereas the decrease in Seebeck coefficient is nearly invisible.As a result,the maximum power factor is enhanced from 5.06×10~(-4)W/m·K~2to 8.08×10~(-4)W/m·K~2at 612~?C.On the other hand,the reference sample,which was obtained by using Sn Se nanostructures as the precursor,displays very poor power factor of only 1.30×10~(-4)W/m·K~2at 537~?C.The x-ray diffraction(XRD),scanning electron microscope(SEM),x-ray fluorescence(XRF),and Hall effect characterizations suggest that the anisotropic crystal growth and existing Sn vacancy might be responsible for the enhanced electrical transport in the polycrystalline Sn Se prepared by using SnSe_2 precursor.On the other hand,the impact of heat-treating temperature on thermal conductivity is not obvious.Owing to the boosting of power factor,a high z T value of 1.07 at 612~?C is achieved.This study provides a new method to synthesize polycrystalline Sn Se and pave a way to improve the thermoelectric properties of polycrystalline bulk materials with similar layered structure.