胍基硅前驱体的合成及应用

以胍基取代的二甲基二氯硅烷与胺基锂反应合成了3种硅基化合物,使用核磁共振、高分辨质谱、元素分析对化合物结构进行了表征,通过热重分析(TGA)研究了化合物的热稳定性、挥发性、蒸汽压等性能。 3种化合物均具有良好的热稳定性及挥发性,无明显热分解过程,固体残留小于1%,接近纯挥发过程,最高蒸汽压在3600~5300 Pa,满足前驱体使用要求。 以二甲基-胍基-甲乙胺基-硅烷为前驱体,采用螺旋波等离子体气相沉积(HWPCVD)工艺制备了硅基薄膜,使用X射线光电子能谱(XPS)和扫描电子显微镜(SEM)分析了薄膜的化学组成和膜表面结构,XPS分析结果证实该薄膜为Si、N、C组成,实验结果表明,该类胍基硅化合物可作为硅基化学气相沉积(CVD)前驱体材料应用于集成电路制造。     

Synthesis,Characterization, Thermal Property of Si(c‐C5H9NH)4 and Its Potential as CVD Precursor for SiC Film

Silicon(IV) amide Si(c‐C₅H₉NH)₄ ( 1 ), was synthesized and characterized by ¹H, ¹³C, and ²⁹Si NMR spectroscopy, EI‐MS, elemental analysis, and X‐ray diffraction. Its thermal stability and volatility were also investigated. The as‐grown film, which was characterized by SEM, AFM, XRD and XPS, was deposited using 1 as single precursor through a low‐pressure chemical vapor deposition (LPCVD) process at a temperature as low as 600 °C. The results demonstrated that silicon(IV) amides can be promising single‐precursor for deposition of low‐temperature SiC films.     

Plasma-Enhanced CVD of Organosilicate Glass (OSG) Films Deposited from Octamethyltrisiloxane,Bis(trimethylsiloxy)methylsilane,and 1,1,3,3-Tetramethyldisiloxane

Octamethyltrisiloxane (OMTS), bis(trimethylsiloxy)methylsilane (BTMS), or 1,1,3,3-tetramethyldisiloxane (TMDS) mixed with oxygen and argon produced organosilicate glass (OSG) films having high methyl content under pulse plasma-enhanced chemical vapor deposition (PECVD). The hydrogen concentration in films deposited from OMTS, BTMS, and TMDS can exceed twice the maximum concentration in films grown from methylsilane precursors. However, the refractive indices and dielectric constants of the films grown from OMTS, BTMS, and TMDS were close to that of minimum values observed for the films grown from methylsilane precursors. This suggests that at high concentrations, methyl incorporation does not result in further reduction of film density. ²⁹Si nuclear magnetic resonance (NMR) resolves the complex differences in the structure of the OSG films that are not apparent from Fourier transform infrared spectroscopy (FTIR) and reveals that the stability of OSG materials is improved by eliminating M groups and favoring the incorporation of T groups. These films exhibit low dielectric constants in the range of 2.4–2.6.     

N-substituted hexamethyldisilazanes as new substances for the synthesis of functional films in the system Si-Ge-C-N-H

N-Organylbis(trimethylsilyl)amines of the general formula RN(SiMe₃)₂ (R = Me₃Si, Et₃Ge) were synthesized by reaction of sodium bis(trimethylsilyl)amide with the corresponding trialkylsilyl(germyl) halide. Their IR, UV, and ¹H, ¹³C, and ²⁹Si NMR spectra were studied, and saturated vapor pressures and thermal stabilities were determined. The possibility of using the RN(SiMe₃)₂ compounds as precursors in chemical vapor deposition of films with specified composition was estimated by thermodynamic modeling.     

Synthesis and characterization of CuInS2 single source precursors for chemical vapor deposition

A family of single source precursors, for the spray chemical vapor deposition (CVD) of chalcopyrite thin films (CuInS₂), has been synthesized in good yields (ca. 65%). Newly synthesized compounds include [{L}₂Cu(SR)₂In(SR)₂], (R=alkyl, aryl; L=neutral donor ligand). The use of the single source precursors provides an attractive alternative over conventionally used multi-source precursors, which are often toxic, air sensitive and pyrophoric. However, it is desirable that these thin films be processed on flexible polymer substrates such as Kapton^TM. Therefore, milder deposition temperatures are needed to maintain the structural integrity of the underlying polymer substrates. By selective manipulation of the steric and electronic properties of the precursor, milder processing temperatures may be employed, while mainting the desired stoichiometry of the deposited films. Elucidation of the structures have been confirmed by the use of NMR. Thermal analytical techniques, differential scanning calorimetry (DSC) and thermogravimetric analysis (TG), have been employed to determine thermal profiles of each candidate compound. This revised version was published online in August 2006 with corrections to the Cover Date.     

Synthesis, characterization and properties of a novel fluorinated polyurethane

A novel fluorinated polyurethane (FPU) was prepared by fluorinated polyether glycol (PTMG-g-HFP) as a soft segment, 1,6-hexamethylene diisocyanate (HDI) or toluene diisocyanate (TDI) as a hard segment and 1,4-butanodiol (BDO) as a chain extender. Fourier transform infrared spectroscopy (FTIR), ¹H NMR, ¹³C NMR and gel permeation chromatography (GPC) were used to characterize the structure of the fluorinated polyurethane. The thermal stabilities of the fluorinated polyurethane and the corresponding hydrogenated polyurethane were studied by thermogravimetric analysis (TGA). X-ray photoelectron spectroscopy (XPS) analysis at two different sampling depths for the fluorinated polyurethane was used to investigate the surface compositions of FPU. And the mechanical properties of the fluorinated polyurethane and the corresponding hydrogenated polyurethane were also measured. Chemical resistance of polyurethane films was estimated through spot tests with different solvents. The results showed that FPU had high thermal stability, strain-hardening property and good chemical resistance. The XPS measurements showed the fluorine enrichment on the surface of FPU.     

Synthesis,characterization, and thermal properties of silicon(IV) compounds containing amidinate ligands as CVD precursors

The title compounds of the type R-C(=NⁱPr) (-N′ ⁱPrSiMe₃) (with R = Me or ⁿBu) as potential chemical vapor deposition (CVD) precursors have been synthesized and characterized by ¹H, ¹³C, and ²⁹Si NMR spectroscopy as well as by EI-MS and elemental analysis where necessary. Thermal properties, including stability, volatility, transport behavior, and vapor pressure, were evaluated by thermogravimetric analysis to confirm that they are suitable for the CVD procedure. Deposition was accomplished in a hot wall CVD reactor system, which qualitatively verified the ability of these compounds as CVD precursors.     

Molecular Design of Fluorocarbon Film Architecture by Pulsed Plasma Enhanced and Pyrolytic Chemical Vapor Deposition

Pulsed plasma enhanced chemical vapor deposition (pulsed PECVD) and pyrolytic chemical vapor deposition (pyrolyric CVD) of fluorocarbon films from hexafluoropropylene oxide (HFPO) have demonstrated the ability to molecularly design film architecture. Film structures ranging from highly amorphous crosslinked matrices to linear perfluoroalkyl chain crystallites can be established by reducing the modulation frequency of plasma discharge in plasma activated deposition and by eventually shifting mechanistically from an electrically activated to a thermally activated process. X-ray photoelectron spectroscopy (XPS) showed CF₂ content increasing from 39–65 mol%. Fourier transform infrared spectroscopy (FTIR) showed an increasing resolution between the symmetric and asymmetric CF₂ stretches, and a reduction in the intensity of the amorphous PTFE and CF₃ bands. High-resolution solid-state ¹⁹F nuclear magnetic resonance spectroscopy (NMR) revealed an increasing CF₂CF₂CF₂ character, with the pyrolytic CVD film much like bulk poly(tetrafluoroethylene) (PTFE). X-ray diffraction (XRD) patterns evidenced an increase in crystallinity, with the pyrolytic CVD film showing a characteristic peak at 2 = 18° representing the (100) plane of the hexagonal structure of crystalline PTFE above 19°C.     

Volatile Heteroligand Complexes of Copper(II): New Precursors for Chemical Vapor Deposition of Copper Films

Two heteroligand ketoiminate–diketonate complexes of copper(II), CuL(hfa) (1), L = pentane-2-imino-4-onato, CH₃COCHCNHCH ₃ ^– , and CuL′(hfa) (2), L′ = 2,2,6,6-tetramethyl-3-iminoheptane-5-onato, C(CH₃)₃COCHCNHC(CH)^–, were studied as precursors for chemical vapor deposition of copper films. The flow method was employed to measure the temperature dependences of a saturated vapor pressure of these compounds, the thermodynamic parameters of evaporation–sublimation were calculated, and the volatilities of these compounds and thermal behaviors in the condensed and gaseous phases were compared. The copper films were compared, and it was shown that comparatively high growth rates are reached when (2) is used to obtain copper films in hydrogen.     

Influence of deposition pressure on hydrogenated amorphous carbon films prepared by d.c.‐pulse plasma chemical vapor deposition

Hydrogenated amorphous carbon films (a‐C : H) were prepared by d.c.‐pulse plasma chemical vapor deposition using CH₄ and H₂ gases. The microstructure and hardness of the resulting films were investigated at different deposition pressures (6, 8, 11, 15, and 20 Pa). The growth rate increased sharply from 3.2 to 10.3 nm/min with increasing the pressure from 6 to 20 Pa. According to Raman spectra, XPS, and Fourier transform infrared analysis, the films deposited at the pressure of 6 and 8 Pa have high sp³ content and show typical diamond‐like character. However, the microstructures and bond configuration of the films deposited at 11, 15, and 20 Pa have high sp² content and favored fullerene‐like nanostructure. The hardness and sp² content were shown to reach their minimum values simultaneously at a deposition pressure of 8 Pa and then increased continuously. The film with fullerene‐like nanostructure obtained at 20 Pa displays a high Raman I_D/I_G ratio (~1.6), and low XPS C 1s binding energy (284.4 eV). The microstructural analysis indicates that the films are composed of a hard and locally dense fullerene‐like network, i.e. a predominantly sp²‐bonded material. The rigidity of the films is basically provided by a matrix of dispersed cross‐linked sp² sites. Copyright © 2012 John Wiley & Sons, Ltd.     

Chemical Vapor Deposition of SnO2 Thin Films from Bis(β‐diketonato)tin Complexes

A series of bis(β‐diketonato)tin compounds have been systematically synthesized and examined as precursors for chemical vapor deposition of SnO₂ thin films. These complexes were characterized by elemental analyses and NMR, IR and mass spectroscopic methods. X‐ray single‐crystal determination of Sn(tfac)₂ reveals that the complex possesses a distorted trigonal bipyramidal structure. The SnO₂ films can be deposited on the substrates such as silicon, titanium nitride, and glass by using Sn(hfac)₂, Sn(tfac)₂ and Sn(acac)₂ as CVD precursors at deposition temperatures of 300‐600°C with a carrier gas of O₂. The deposition rates range from 20 to 600 Å/min. Deposited films have been characterized by XRD, SEM, AFM, AES and AAS analyses.     

Possibilités d'obtention de dépôts dans le système céramique ti-v-c-n à partir de sources moléculaires

Monometallic and heterobtmetallic titanium and vanadium compounds were prepared and studied as precursors to the chemical vapor deposition (CVD) of carbide and nitride ceramic thin films. Their thermal properties are discussed according to the chemical environment of the metal atom and their CVD behavior is studied. Two of them, CpTiCl₂N(SiMe₃)₂ and Cp₂VMe₂, are applied to the deposition of thin films within the Ti-V-C-N quaternary system.     

Guanidinate-stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2

Novel guanidinato complexes of hafnium [Hf{eta2-(iPrN)2CNR2}2(NR2)2] (R2 = Et2, 1; Et, Me, 2; Me2, 3), synthesized by insertion reactions of N,N'-diisopropylcarbodiimide into the M-N bonds of homologous hafnium amide complexes 1-3 and {[mu2-NC(NMe2)2][NC(NMe2)2]2HfCl}2 (4) using a salt metathesis reaction, are reported. Single-crystal X-ray diffraction analysis revealed that compounds 1-3 were monomers, while compound 4 was found to be a dimer. The observed fluxional behavior of compounds 1-3 was studied in detail using variable-temperature and two-dimensional NMR techniques. The thermal characteristics of compounds 1-3 seem promising for HfO2 thin films by vapor deposition techniques. Metal-organic chemical vapor deposition experiments with compound 2 as the precursor resulted in smooth, uniform, and stoichiometric HfO2 thin films at relatively low deposition temperatures. The basic properties of HfO2 thin films were characterized in some detail.     

Preparation of Si/O/C nanotubes using Ge nanowires as template

The silicon oxycarbide Si/O/C nanotubes were prepared by two-step procedure. First, a nanostructure deposit mainly composed of nanocables with germanium core was synthetized by low pressure chemical vapor deposition (LPCVD) using hexamethyldigermane Ge₂Me₆ and 1,1,3,3-tetramethyldisilazane (Me₂SiH)₂NH as the volatile precursors. Second, LPCVD was followed by annealing at 850 °C in vacuum to evaporate germanium core. As a result Si/O/C nanotubes were formed. Various techniques such as Raman spectroscopy, TEM, SEM/EDX, XPS and HRTEM were used to study the physical and chemical properties.     

Synthesis and Structural Characterization of β‐Ketoiminate‐Stabilized Gallium Hydrides for Chemical Vapor Deposition Applications

Bis‐β‐ketoimine ligands of the form [(CH₂)_n{N(H)C(Me)?CHC(Me)?O}₂] (LⁿH₂, n=2, 3 and 4) were employed in the formation of a range of gallium complexes [Ga(Lⁿ)X] (X=Cl, Me, H), which were characterised by NMR spectroscopy, mass spectrometry and single‐crystal X‐ray diffraction analysis. The β‐ketoimine ligands have also been used for the stabilisation of rare gallium hydride species [Ga(Lⁿ)H] (n=2 ( 7 ); n=3 ( 8 )), which have been structurally characterised for the first time, confirming the formation of five‐coordinate, monomeric species. The stability of these hydrides has been probed through thermal analysis, revealing stability at temperatures in excess of 200 °C. The efficacy of all the gallium β‐ketoiminate complexes as molecular precursors for the deposition of gallium oxide thin films by chemical vapour deposition (CVD) has been investigated through thermogravimetric analysis and deposition studies, with the best results being found for a bimetallic gallium methyl complex [L³{GaMe₂}₂] ( 5 ) and the hydride [Ga(L³)H] ( 8 ). The resulting films ( F5 and F8 , respectively) were amorphous as‐deposited and thus were characterised primarily by XPS, EDXA and SEM techniques, which showed the formation of stoichiometric ( F5 ) and oxygen‐deficient ( F8 ) Ga₂O₃ thin films.     

新型单膦配位羧酸银配合物的合成、表征及其热稳定性的研究(英)

0 IntroductionIn recent years, silver carboxylates have attractedmany interests, mostly because they are promisingcandidates in the growth of metal thin films via metal-organic chemical vapor deposition (MOCVD) tech-niques. These sliver compounds show low light sensi-tivity and relatively high thermal stability. Several ex-amples of bisphosphine ligands coordinated silver car-boxlylates have been reported[1￣4].Monophosphine coordinated silver complexes areexpected to have better volatility,…     

Structural,optical and secondary electron emission properties of diamond like carbon thin films deposited by pulsed-DC plasma CVD technique

Plasma enhanced chemical vapor deposition (PECVD) technique using pulsed-DC power supply was used to fabricate diamond like carbon (DLC) films at deposition rates as high as 110 nm/min. The DLC films deposited by pulsed-DC and DC based power supplies under different gas flow ratios were studied for their suitability as dielectric layer coatings in plasma display panels (PDPs). The effect of deposition parameters on the properties of the DLC films were studied using Fourier transform infra-red spectroscopy (FTIR) and spectroscopic ellipsometry (SE). FTIR reveals that higher hydrogen dilution in gas mixture leads to higher sp³ content. SE studies in wide spectral range were analyzed using Tauc-Lorentz model dielectric function. A rise in the extracted refractive index was seen on increasing the H₂ content in the feed gas, thus resulting in optically denser films. Secondary electron emission coefficient (γ) was measured in the films deposited by the DC and pulsed-DC based PECVD. Firing voltage in the DLC samples was found to have very low variation in the operating pressure range used in commercial PDPs, suggesting possibility of enhanced long term reliability of DLC coatings in future PDP applications.     

Nanostructured ZrO2 and Zr‐C‐N Coatings from Chemical Vapor Deposition of Metal‐Organic Precursors

Nanocrystalline zirconium carbonitride (Zr‐C‐N) and zirconium oxide (ZrO₂) films were deposited by chemical vapor deposition (CVD) of zirconium‐tetrakis‐diethylamide (Zr(NEt₂)₄) and ‐tert‐butyloxide (Zr(OBu^t)₄), respectively. The films were deposited on iron substrates and characterized by scanning electron microscopy (SEM), X‐ray diffraction (XRD) and X‐ray photoelectron spectroscopy (XPS). The Zr‐C‐N films show blue, golden brown or bronze colours, with colour stability depending upon the precursor composition (pure metal amide or mixed with Et₂NH). The deposition temperature showed no pronounced effect on the granular morphology of the Zr‐C‐N films. The XRD data of the films correspond to the formation of carbonitride phase whereas the XPS analyses revealed a strong surface oxidation and incorporation of oxygen in the film. The films deposited using a mixture of Zr(NEt₂)₄ and Et₂NH showed higher N content, better adhesion and scratch resistance when compared to films obtained from the CVD of pure Zr(NEt₂)₄. Subject to the precursor composition and deposition temperature (550‐750 °C), the microhardness values of Zr‐C‐N films were found to be in the range 2.11‐5.65 GPa. For ZrO₂ films, morphology and phase composition strongly depend on the deposition temperature. The CVD deposits obtained at 350 °C show tetragonal ZrO₂ to be the only crystalline phase. Upon increasing the deposition temperature to 450 °C, a mixture of tetragonal and monoclinic modifications was formed with morphology made up of interwoven elongated grains. At higher temperatures (550 and 650 °C), pure monoclinic phase was obtained with facetted grains and developed texture.     

Cadmium O‐alkylxanthates as CVD precursors of CdS: a chemical characterization

Cadmium bis(O‐alkylxanthates) are potential single‐source molecular precursors for the chemical vapor deposition (CVD) of Cd(II) sulfide thin films. In this work, a multi‐technique characterization of Cd(O‐RXan)₂ compounds [where O‐RXan is CH₃CH₂OCS₂ (O‐EtXan) or (CH₃)₂CHOCS₂ (O‐ⁱPrXan)] is performed by means of several analytical methods (extended x‐ray absorption fine structure, Raman, Fourier transform infrared and optical absorption, spectroscopics ¹H and ¹³C NMR, thermal analysis and mass spectrometry) for a thorough investigation of their structure and chemical–physical properties. The most important results concerning the chemical behavior under different experimental conditions, with particular attention to relevant properties for CVD applications, are presented and discussed. Copyright © 2005 John Wiley & Sons, Ltd.     

Tetraanionic Nitrogen‐Rich Tetrazole‐Based Energetic Salts

1,1,3,3‐Tetra(1H‐tetrazol‐5‐yl)propane‐based energetic salts were synthesized in a simple and straightforward manner. The structures of these new salts were determined by ¹H and ¹³C NMR spectroscopy, IR spectroscopy, MS, and elemental analysis. All of these compounds showed good thermal stabilities above 180 °C, as confirmed by thermogravimetric–differential thermal analysis (TG–DTA) measurements. Moreover, these salts also exhibited high positive enthalpies of formation, high nitrogen content, good thermal stabilities, and moderate detonation properties.