胍基硅前驱体的合成及应用

以胍基取代的二甲基二氯硅烷与胺基锂反应合成了3种硅基化合物,使用核磁共振、高分辨质谱、元素分析对化合物结构进行了表征,通过热重分析(TGA)研究了化合物的热稳定性、挥发性、蒸汽压等性能。 3种化合物均具有良好的热稳定性及挥发性,无明显热分解过程,固体残留小于1%,接近纯挥发过程,最高蒸汽压在3600~5300 Pa,满足前驱体使用要求。 以二甲基-胍基-甲乙胺基-硅烷为前驱体,采用螺旋波等离子体气相沉积(HWPCVD)工艺制备了硅基薄膜,使用X射线光电子能谱(XPS)和扫描电子显微镜(SEM)分析了薄膜的化学组成和膜表面结构,XPS分析结果证实该薄膜为Si、N、C组成,实验结果表明,该类胍基硅化合物可作为硅基化学气相沉积(CVD)前驱体材料应用于集成电路制造。

Synthesis and Application of Guanidinato Silicon Precursors

Three silicon compounds were synthesized by reaction of dimethyldichlorosilane with 1,1,3,3-tetramethylguanidine substituent and lithium amide. The structures of the compounds were verified by ¹H nuclear magnetic resonance (NMR), ¹³C NMR, electron ionization-mass spectrometry (EI-MS), and elemental analysis. The thermal stability and vapor pressures of these compounds were evaluated by thermo gravimetric analysis(TGA). The results show a nearly pure volatilization with low decomposition process and residual(<1%). The highest vapor pressure ranges from 3600 Pa to 5300 Pa, which is suitable for chemical vapor deposition (CVD) precursors. Silicon films were prepared by using dimethyl-guanidinato-ethylmethylamide silane as the precursor in Helicon wave plasma CVD (HWP-CVD). The properties of the films were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The films are composed of Si, N, and C. Guanidinate-based silicon compounds as CVD precursors have potential applications in fabrication of semiconductor devices.