胍基硅前驱体的合成及应用

以胍基取代的二甲基二氯硅烷与胺基锂反应合成了3种硅基化合物,使用核磁共振、高分辨质谱、元素分析对化合物结构进行了表征,通过热重分析(TGA)研究了化合物的热稳定性、挥发性、蒸汽压等性能。 3种化合物均具有良好的热稳定性及挥发性,无明显热分解过程,固体残留小于1%,接近纯挥发过程,最高蒸汽压在3600~5300 Pa,满足前驱体使用要求。 以二甲基-胍基-甲乙胺基-硅烷为前驱体,采用螺旋波等离子体气相沉积(HWPCVD)工艺制备了硅基薄膜,使用X射线光电子能谱(XPS)和扫描电子显微镜(SEM)分析了薄膜的化学组成和膜表面结构,XPS分析结果证实该薄膜为Si、N、C组成,实验结果表明,该类胍基硅化合物可作为硅基化学气相沉积(CVD)前驱体材料应用于集成电路制造。     

Secondary electron emission yield from vertical graphene nanosheets by helicon plasma deposition

The secondary electron emission yields of materials depend on the geometries of their surface structures.In this paper,a method of depositing vertical graphene nanosheet(VGN)on the surface of the material is proposed,and the secondary electron emission(SEE)characteristics for the VGN structure are studied.The COMSOL simulation and the scanning electron microscope(SEM)image analysis are carried out to study the secondary electron yield(SEY).The effect of aspect ratio and packing density of VGN on SEY under normal incident condition are studied.The results show that the VGN structure has a good effect on suppressing SEE.