混合配体配合物胍基脒基镧的合成及性能

La₂O₃薄膜材料应用广泛，而制备La₂O₃薄膜的前驱体合成面临着挑战，多数现有前驱体热稳定性差、合成路线复杂或者成本高等问题。因此，本文报道了混配型和均配型的胍基、脒基镧配合物二(N,N′-二异丙基-甲胺基胍基)一(N,N′-二异丙基戊基脒基)合镧(配合物1)和三(N,N′-二异丙基-甲胺基胍基)合镧(配合物2),通过¹H NMR,¹³C NMR表征结构；通过热重分析(TGA)研究所有配合物的热稳定性和挥发性。结果表明：配合物1在加热至170.0℃时，其蒸气压会急剧上升；在202.0℃能产生1.0 Torr的蒸气压；在260.0℃以下该配合物有良好的热稳定性。以上数据说明：该配合物比较好地满足CVD工艺条件，是一种潜在的化学气相沉积前驱体；通过CVD技术，在源加热温度210℃、沉积温度为260.0℃、沉积时间为10.0 min的条件下得到约11.9 nm薄膜，SEM和XPS分析了薄膜的形貌和成分，实验结果表明沉积的纳米薄膜为高纯的La₂     

聚酰亚胺上催化剂增强化学气相沉积钯-铂双层膜

 以N2和O2为载气,采用催化剂增强化学气相沉积法于聚酰亚胺上获得了Pt和Pd-Pt双层金属薄膜. 当使用Pd(hfac)2和PtMe2(COD)为前驱体,在同一反应器内共沉积时,只有Pt被沉积. 金属Pd和Pt顺序沉积可形成Pd-Pt双层膜.     

具有超疏水表面的硅/二氧化硅层次结构薄膜

目前报道的硅基材料的超疏水表面主要是通过制备粗糙微观结构,并在其表面修饰表面能相对较低的有机物两个步骤来实现的,在户外等实际环境中应用时存在由于表面修饰有机物的降解而逐渐失去超疏水性的问题.本工作以液态金属锡作为生长衬底,通过化学气相沉积(CVD)法制备了一种具有超疏水性能的硅基薄膜结构.利用扫描电镜(SEM),透射电镜(TEM)以及X射线衍射(XRD)等手段对产物的表面形貌和组成结构进行分析发现,薄膜表面由竖直生长的硅/二氧化硅(Si/SiO2)核壳层次结构组成.采用Cassie理论模型对其超疏水性能的产生提出了可能的解释.发现构成薄膜表面的Si/SiO2层次结构单元的形貌是影响超疏水性能的重要因素.相对于以前报道的硅基材料的超疏水表面,这种新结构的超疏水性能不依赖于表面化学修饰,有望拓宽硅基材料的应用环境.     

化学气相沉积法制备α-Fe_2O_3薄膜及其性能测试——推荐一个材料化学实验

以配合物乙酰丙酮铁为前驱体,利用超声雾化的方法进行化学气相沉积制备α-Fe2O3薄膜,并对其结构和性能进行测试表征。     

以甲苯为前驱体化学液气相沉积法制备碳/碳复合材料

以甲苯为前驱体利用化学液气相沉积法,采用碳布叠层作预制体,于950℃下沉积9h制备了密度为1.63g/cm³的碳/碳复合材料.用金相显微镜、扫描电子显微镜(SEM)和X射线粉末衍射(XRD)等手段对所得的材料进行了组织结构分析,并测定了其力学性能.实验结果表明,以甲苯为前驱体利用该方法可以制备组织结构比较均匀的碳/碳复合材料.用GC/MS气相色谱质谱联用仪对甲苯热分解产物(不挥发成分)进行了成分分析,提出了甲苯裂解制备碳/碳复合材料的初期热裂解机理和热缩聚机理.     

宽带隙Cu(In,Al)Se2薄膜的制备及表征

以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV.     

聚砜上催化剂增强化学气相沉积钯-铂双层纳米膜

以N2和O2作载气,采用催化剂增强化学气相沉积法在聚砜上获得了Pt和Pd-Pt双层金属纳米薄膜.当使用Pd(hfac)2和Pt(COD)Me2为前驱体在同一反应器内共沉积时,只有Pt被沉积,铂和钯顺序沉积可以得到双层膜.聚砜上金属钯和铂微粒尺度为15~30 nm,双层膜厚度为120~180 nm.     

β-三芳基锗和β-三(α-噻吩基)锗取代丙酸的合成

本文用β-三氯锗基取代丙酸为中间体合成了六个β-三芳基锗取代丙酸化合物,八个β-三(α-噻吩基)锗取代丙酸化合物, 所有化合物均经元素分析、IR、^1HNMR 证实了它们的组成和结构。另外还合成了十个未见文献报道的β-(N-芳基酰胺基)丙基锗倍半氧化物, 用元素分析和IR证实了它们的组成和结构。     

介孔TiO2-ZnO复合薄膜的制备与表征

以三嵌段聚合物P123为模板剂, 以钛酸异丙酯和二水乙酸锌为无机前驱体, 利用溶胶-凝胶法和旋涂法成功地制备了不同ZnO含量的介孔TiO2-ZnO复合薄膜. 在ZnO前驱体摩尔分数为0~50％范围内获得薄膜质量较高的介孔TiO2-ZnO复合薄膜. 用小角XRD、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、能谱仪(EDS)、紫外-可见吸收光谱(UV-Vis)及X射线光电子能谱(XPS)对所得的复合薄膜进行了表征和分析. EDS和XPS等研究证明介孔薄膜为TiO2和ZnO的复合体系, 且ZnO前驱体含量的增加仍能保持TiO2-ZnO复合薄膜的均匀性. UV-Vis研究结果表明, 介孔复合薄膜的光学带隙宽度为3.45-3.58 eV, 随着ZnO含量的增加, 复合薄膜的紫外吸收蓝移.     

配体氮上取代基对二齿双氨基脒钴(II)型ALD前驱体稳定性的影响

新型的二齿双氮基脒金属前驱体bis-amidinate在原子层气相沉积(ALD)中表现出了广阔的应用前景. 前驱体适用性取决于其是否具备适当的稳定性, 而bis-amidinate型前驱体的稳定性可由侧链取代基上β基团的迁移重排来表征. 利用密度泛函理论方法研究了配体氮原子上不同取代基对bis-amidinate型Co前驱体稳定性的影响. 结果表明, β-H的迁移较β-Me的迁移相对容易, 而β基团在不同取代基前驱体中的迁移能力次序为: 异丙基(β-H)＞2-丁基(β-H)＞叔丁基(β-CH₃)     

Synthesis,characterization, and thermal properties of novel silicon 1,1,3,3-tetramethylguanidinate derivatives and use as single-source chemical vapor deposition precursors

A series of chemical vapor deposition (CVD) precursors have been synthesized by a single-step reaction of 1,1,3,3-tetramethylguanidine and a variety of silicon chlorides. The structures of the 1,1,3,3-tetramethylguanidinate-based compounds were verified by ¹H NMR, ¹³C NMR, XPS, EI-MS, and elemental analysis. The thermal stability, transport behavior, and vapor pressures of these compounds were evaluated by simultaneous thermal analyses (STA). These compounds are highly stable and those in liquid form are very volatile. Silicon carbonitride (SiCN) thin films were prepared by using bis (tetramethylguanidine)-dimethyl-silane as the precursor in helicon wave plasma chemical vapor deposition (HWP-CVD). The properties of the films were investigated by SEM, AFM, and XPS. The results showed that the films have good uniformities, low friction coefficient, and high hardness, enabling the films for fabrication of semiconductor devices.     

Pyrolysis and film growth studies of phosphinoborane compounds

Chemical vapor deposition experiments were conducted using phosphinoborane compounds of the type [R₂BPR′₂]_n, where R = CH₂CH₃ (1) or CH₃ (2), R′= C(CH₃)₃, and R = CH₂CH₃ (3) or CH₃ (4), R′ = Si(CH₃)₃. Thin films were deposited on Si substrates at 300–850°C under vacuum using 1–3, while no film formed using 4. All films contained considerable carbon (C/B = 0.67–7) and were deficient in phosphorus (P/B = 0-0.5) according to Auger electron spectroscopy. For 3, silicon was incorporated in the films (Si/B = 0.9–2). The preferential loss of phosphorus was nearly complete at higher pyrolysis temperatures that favor formation of carbon-rich films. Volatile products of the decompositions were observed by in situ mass spectroscopy and by ¹H nuclear magnetic resonance analysis of the condensate in a liquid nitrogen cooled trap. The products indicate that β-hydrogen elimination of alkene from boron is a preferred reaction pathway, while concerted elimination reactions appear to be inefficient. Although these phosphinoborane compounds do not appear to be suitable precursors for pure boron phosphide, the B-P-C films obtained are chemically inert and may be of interest as protective coatings.     

Study on the applications of SiC thin films to MEMS techniques through a fabrication process of cantilevers

We have tried to find the most suitable conditions for the deposition process of silicon carbide thin films as a material for MEMS techniques. We have also studied its application to semiconductor processes. To do this, we have tried to fabricate several dimensions of cantilevers with these silicon carbide thin films. High quality silicon carbide thin films are grown by metal-organic chemical vapor deposition (MOCVD). This process employs single molecular precursors such as diethylmethylsilane (DEMS), 1,3-disilabutane (DSB) at a pressure of 1 × 10⁻³ Pa and a growth temperature in the range of 700–1000 °C. Two fabrication methods are tested for initial fabrication of cantilevers. First, deposit SiC thin films on Si based atomic force microscopy (AFM) cantilevers. Second, used the lift-off process. To get three-dimensional cantilever-shaped SiC thin films, moreover, we chemically etched silicon substrate with strong alkaline solution such as TMAH at 80 °C. In addition, a high resolution of probe tips on the cantilevers was achieved using electron-beam deposition in a carbon atmosphere.     

Chemical Vapor Deposition of SnO2 Thin Films from Bis(β‐diketonato)tin Complexes

A series of bis(β‐diketonato)tin compounds have been systematically synthesized and examined as precursors for chemical vapor deposition of SnO₂ thin films. These complexes were characterized by elemental analyses and NMR, IR and mass spectroscopic methods. X‐ray single‐crystal determination of Sn(tfac)₂ reveals that the complex possesses a distorted trigonal bipyramidal structure. The SnO₂ films can be deposited on the substrates such as silicon, titanium nitride, and glass by using Sn(hfac)₂, Sn(tfac)₂ and Sn(acac)₂ as CVD precursors at deposition temperatures of 300‐600°C with a carrier gas of O₂. The deposition rates range from 20 to 600 Å/min. Deposited films have been characterized by XRD, SEM, AFM, AES and AAS analyses.     

Chemical vapor deposition growth of phase-selective inorganic lead halide perovskite films for sensitive photodetectors

Inorganic lead halide perovskites are attractive optoelectronic materials owing to their relative stability compared to organic cation alternatives.The chemical vapor deposition(CVD) method offers potential for high quality perovskite film growth.The deposition temperature is a critical parameter determining the film quality owing to the melting difference between the precursors.Here,perovskite films were deposited by the CVD method at various temperatures between 500-800℃.The perovskite phase converts from CsPb₂Br₅ to CsPbBr₃ gradually as the deposition temperature is increased.The grain size of the perovskite films also increases with temperature.The phase transition mechanism was clarified.The photoexcited state dynamics were investigated by spatially and temporally resolved fluorescence measurements.The perovskite film deposited under 750℃ condition is of the CsPbBr₃ phase,showing low trap-state density and large crystalline grain size.A photodetector based on perovskite films shows high photocurrent and an on/off ratio of ~2.5×10⁴.     

Synthesis,characterization, and thermal properties of silicon(IV) compounds containing amidinate ligands as CVD precursors

The title compounds of the type R-C(=NⁱPr) (-N′ ⁱPrSiMe₃) (with R = Me or ⁿBu) as potential chemical vapor deposition (CVD) precursors have been synthesized and characterized by ¹H, ¹³C, and ²⁹Si NMR spectroscopy as well as by EI-MS and elemental analysis where necessary. Thermal properties, including stability, volatility, transport behavior, and vapor pressure, were evaluated by thermogravimetric analysis to confirm that they are suitable for the CVD procedure. Deposition was accomplished in a hot wall CVD reactor system, which qualitatively verified the ability of these compounds as CVD precursors.     

Synthesis and characterisation of Hf(thd)2X2 derivatives [X = N(SiMe3)2, OSiMe3 and OSiBuMe2] as precursors for MOCVD of hafnium silicate films

Hafnium β-diketonatochlorides HfCl₂(thd)₂ (1), HfCl(thd)₃ (2) as well as β-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)₂[N(SiMe₃)₂]₂ (3), Hf(thd)₂(OSiMe₃)₂ (4) and Hf(thd)₂(OSi^tBuMe₂)₂ (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, ¹H NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSi_xO_y films by pulsed liquid injection MOCVD on Si(1 0 0) and R plane sapphire. The as-deposited at 600–800 °C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7–0.85) and smooth.     

A new C27-steroidal glycoside from Ophiopogon japonicus

A new C27-steroidal glycoside with three known compounds were isolated from the tuber of Ophiopogonjaponicus （Thunb.） Ker-Gawl. Based on the spectral analysis, including HRMS, 1H NMR, 13C NMR, DEPT, 1H-1H COSY, HMQC and HMBC, their chemical structures were determined as pennogenin-3-O-α-L-rhamnopyranosyl-（1→ 2）-β-D-xylopyranosyl-（1→ 4）-13-D-gluco- pyranoside （1）, pennogenin-3-O-α-L-rhamnopyranosyl-（1→ 2）-β-D-glucopyranoside （2）, ophiopojaponin C （3） and ophiopogonin D （4）. 2007 Jian Zhong Wang. Published by Elsevier B.V. on behalf of Chinese Chemical Society. All rights reserved.     

Novel phosphorus-silicon synergistic flame retardants:Synthesis and characterization

Three novel flame retardants containing both phosphorus and silicon elements in their structures,including[（1,1,3,3- tetramethyl-1,3-disiloxanediyl）di-2,1-ethanediyl]bis（diphenylphosphine oxide）（FR-1）,[（2,4,6,8-tetramethylcyclotetra-siloxane -2,4,6,8-tetrayl）tetra-2,1-ethanediyl]tetrakis[diphenylphosphine oxide]（FR-2） and 1,3,5,7,9,11,13,15-octakis（di-phenylphosphine oxide-2,1-ethanediyl）pentacyclo[9.5.1.1^3,9.l^5,15.1^7,13]octasiloxane（FR-3） were synthesized by a convenient pathway from the reaction of diphenylphosphine oxide（DPPO） and vinyl-terminated siloxanes under the catalysis of triethylborane. The chemical structures of the target compounds were confirmed by nuclear magnetic resonance(¹H NMR,¹³C NMR,²⁹Si NMR and ³¹P NMR),matrix-assisted laser desorption/ionization time-of-flight mass spectrometry（MALDI-TOF-MS） and Fourier transform infrared（FT IR） measurements.Thermogravimetric analysis（TGA） results indicated that the new flame retardants possessed good thermal stability both in nitrogen and in air.FR-3 containing polyhedral oligosilsesquioxanes（POSS） moiety exhibited the best thermal properties with a 10%weight loss temperature>400℃ and a residual weight ratio>39%at 700℃ .     

1,3,2-Diazastanna-[3]ferrocenophanes bearing alkyn-1-yl groups at tin and their 1,1-organoboration with triethylborane—molecular structure of a novel spirotin compound

2,2-Dichloro-1,3-bis(trimethylsilyl)-1,3,2-diazastanna-[3]ferrocenophane (3) reacts with lithium alkynides LiCCR¹ to give the corresponding di(alkyn-1-yl)tin derivatives 4a (R¹=^tBu) and 4b (R¹=SiMe₃). 1,1-Organoboration of 4 with triethylborane affords the spirotin compounds 5 which contain both a ferrocenophane and a stannacyclopentadiene ring. The crystal structure of 5b was determined by X-ray analysis. The compounds 4 and 5 were characterised in solution by multinuclear magnetic resonance (¹H-, ¹¹B-, ¹³C-, ¹⁵N-, ²⁹Si-, ¹¹⁹Sn-NMR), using pulsed field gradients in HMBC experiments for the ¹H detected ¹⁵N- and ¹¹⁹Sn-NMR signals. The compound 5b was also studied by solid-state ¹³C, ²⁹Si and ¹¹⁹Sn MAS NMR in order to correlate liquid and solid-state NMR data with the structural evidence.